Discrete Semiconductors Datasheets

588 Discrete Semiconductors datasheets read into specs, pinouts and ratings. Parts from onsemi, Diodes and Infineon Technologies.

Discrete Semiconductors datasheets, page 10

588 parts · page 10 of 20. Most used first, then by part number.

IRFR024NPBF

Infineon Technologies

Lead-Free Power MOSFET available in D-Pak (TO-252AA) and I-Pak (TO-251AA) packages.

HEXFET Power MOSFETD-Pak (TO-252AA)

IRFR024NTRPBF

Infineon Technologies

MOSFET N-CH 55V 17A DPAK

HEXFET Power MOSFETTO-252-3, DPAK (2 Leads + Tab), SC-63

IRFU024N

Infineon Technologies

HEXFET Power MOSFET

IRFZ44N

Infineon Technologies

Advanced HEXFET® Power MOSFET with ultra-low on-resistance, fast switching, and rugged design, suitable for a wide variety of applications.

Power MOSFETTO-220AB

IRFZ44NPBF

Infineon Technologies

MOSFET N-CH 55V 49A TO220AB

Power MOSFETTO-220-3

IRLML0030

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V VGS), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML0040

Infineon Technologies

30V N-channel logic-level HEXFET power MOSFET in a Micro3 (SOT-23) package for load/system switch applications, with RDS(on) below 29 mOhm at VGS = 4.5V.

HEXFET-Power MOSFETSOT-23

IRLML0060

Infineon Technologies

30V logic-level N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) (max 29 mΩ at 4.5V), intended for load/system switching

HEXFET-Power MOSFET

IRLML0100

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V) for load/system switch applications

HEXFET-Power MOSFET

IRLML2030

Infineon Technologies

30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS), intended for load/system switch applications.

HEXFET-Power MOSFETSOT-23

IRLML2060

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at VGS=4.5V) in an industry-standard SOT-23 package, intended for load/system switch applications

HEXFET-Power MOSFET

IRLML2244

Infineon Technologies

30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML2246

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML2402

Infineon Technologies

30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) with low RDS(on) (<29 mOhm at 4.5V), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML2502

Infineon Technologies

30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mΩ), intended for load/system switching.

HEXFET-Power MOSFET

IRLML2803

International Rectifier

30V N-channel HEXFET power MOSFET in SOT-23 package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications

N-Channel Power MOSFETSOT-23

IRLML2803PBF

International Rectifier

N-Channel Power MOSFET

IRLML2803TRPBF

Infineon Technologies

MOSFET N-CH 30V 1.2A SOT23

N-Channel Power MOSFETTO-236-3, SC-59, SOT-23-3

IRLML5103

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with RDS(on) below 29 mΩ at 4.5V gate drive, intended for load/system switching

HEXFET-Power MOSFETSOT-23

IRLML5203

Infineon Technologies

30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) of 29 mΩ max at 4.5V gate drive, intended for load/system switching

HEXFET-Power MOSFETSOT-23

IRLML6244

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 (Micro3) with low RDS(on) (<29 mΩ at 4.5V gate drive), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML6246

Infineon Technologies

30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V gate drive) in a SOT-23 package, intended for load/system switch applications.

HEXFET-Power MOSFETSOT-23

IRLML6302

Infineon Technologies

30V logic-level N-channel HEXFET power MOSFET in SOT-23 with 29 mOhm max RDS(on) at 4.5V, for load/system switching

HEXFET-Power MOSFET

IRLML6344

Infineon Technologies

30V N-Channel HEXFET Power MOSFET for load/system switch applications, featuring low on-resistance.

HEXFET-Power MOSFETSOT-23

IRLML6344TRPBF

Infineon Technologies

MOSFET N-CH 30V 5A MICRO3/SOT23

HEXFET-Power MOSFETTO-236-3, SC-59, SOT-23-3

IRLML6346

Infineon Technologies

30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V VGS) in a Micro3 (SOT-23) package for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML6401

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 with 29 mΩ max RDS(on) at 4.5V VGS, intended for load/system switching.

HEXFET-Power MOSFET

IRLML6402

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a SOT-23 package, intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML6402TRPBF

Infineon Technologies

MOSFET P-CH 20V 3.7A SOT23

P-Channel Power MOSFETTO-236-3, SC-59, SOT-23-3

IRLML9301

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a Micro3 (SOT-23) package, intended for load/system switch applications.

HEXFET-Power MOSFETSOT-23