IRFR024NTRPBF

International Rectifier

Manufacturer

Infineon Technologies

Overview

Part: International Rectifier IRFR024NPbFIRFU024NPbF

Type: HEXFET® Power MOSFET

Key Specs:

Continuous Drain Current (I_D @ 25°C): 17 A
Continuous Drain Current (I_D @ 100°C): 12 A
Drain-to-Source Breakdown Voltage (V_DSS): 55 V
Static Drain-to-Source On-Resistance (R_DS(on)): 0.075 Ω (Max)
Gate Threshold Voltage (V_GS(th)): 2.0 V (Min) to 4.0 V (Max)
Operating Junction and Storage Temperature Range: -55 to +175 °C

Features:

Ultra Low On-Resistance
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free

Applications:

null

Package:

IRFR024N: D-PAK (Surface Mount)
IRFU024N: Straight Lead (Through-hole mounting)

Electrical Characteristics

	Parameter	Min.	Typ.	Max.	Units	Conditions
V	Drain-to-Source Breakdown Voltage	55	Typ.	wax.	V	V _GS = 0V, I _D = 250μA
V _(BR)DSS			0.050
ΔV _(BR)DSS /ΔT _J	= -		0.052		V/°C	Reference to 25°C, I _D = 1mA
R _DS(on)	Static Drain-to-Source On-Resistance			0.075	Ω	V _GS = 10V, I _D = 10A [4]
V _GS(th)	Gate Threshold Voltage	2.0	_	4.0	V	V_DS = V_GS , I_D = 250 μ A
g fs	Forward Transconductance	4.5	—	—	S	V_DS = 25V, I_D = 10A®
I _DSS	Drain-to-Source Leakage Current			25	μΑ	V_DS = 55V , V_GS = 0V
יטאטי	Drain to Course Ecanage Carrent	_		250	μΛ	V_DS = 44V, V_GS = 0V, T_J = 150°C
lana	Gate-to-Source Forward Leakage			100	nA	V _GS = 20V
I _GSS	Gate-to-Source Reverse Leakage			-100		V _GS = -20V
Qg	Total Gate Charge	_	_	20		I _D = 10A
Qgs	Gate-to-Source Charge			5.3	nC	V _DS = 44V
Q_gd	Gate-to-Drain ("Miller") Charge			7.6		V _GS = 10V, See Fig. 6 and 13 ⊕ ⊚
t _d(on)	Turn-On Delay Time		4.9			V _DD = 28V
t _r	Rise Time		34			I _D = 10A
t _d(off)	Turn-Off Delay Time	_	19		ns	R_G = 24Ω
tf	Fall Time		27			R_D = 2.6Ω , See Fig. 10 [4]
	Internal Drain Inductance		4.5			Between lead,
L D	Internal Drain Inductance		4.5			6mm (0.25in.)
	Internal Course Indicates a		7.5		nH	from package
L _S	Internal Source Inductance		7.5	_		and center of die contact®
Ciss	Input Capacitance		370			V _GS = 0V
Coss	Output Capacitance	_	140	_	pF	V _DS = 25V
C _rss	Reverse Transfer Capacitance		65			f = 1.0MHz, See Fig. 5

Absolute Maximum Ratings

	Parameter	Max.	Units
I _D @ T _C = 25°C	Continuous Drain Current, V _GS @ 10V	17
I _D @ T _C = 100°C	Continuous Drain Current, V _GS @ 10V	12	A
I _DM	Pulsed Drain Current [1][6]	68
P _D @T _C = 25°C	Power Dissipation	45	W
	Linear Derating Factor	0.30	W/°C
V _GS	Gate-to-Source Voltage	± 20	V
E _AS	Single Pulse Avalanche Energy@6	71	mJ
I _AR	Avalanche Current[1]	10	Α
E _AR	Repetitive Avalanche Energy[1]	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt [3][6]	5.0	V/ns
TJ	Operating Junction and	-55 to + 175
T _STG	Storage Temperature Range		°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Thermal Information

	Parameter	Max.	Units
R ₀ JC	Junction-to-Case	3.3
R ₀ JA	Case-to-Ambient (PCB mount)**	50	°C/W
R _0JA	Junction-to-Ambient	110

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
IRFR/FU024N	Infineon Technologies	—
IRFR024N	Infineon Technologies	TO-252
IRFU024N	Infineon Technologies	—

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