IRFR024NPBF
nternationa ISER Rectifier
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Overview
Part: IRFR024NPbF, IRFU024NPbF from International Rectifier
Type: HEXFET® Power MOSFET
Key Specs:
- Continuous Drain Current (ID @ Tc = 25°C): 17 A
- Drain-to-Source Breakdown Voltage (V(BR)DSS): 55 V
- Static Drain-to-Source On-Resistance (RDS(on)): 0.075 Ω (Max)
- Power Dissipation (PD @ Tc = 25°C): 45 W
- Operating Junction and Storage Temperature Range: -55 to +175 °C
Features:
- Ultra Low On-Resistance
- Surface Mount (IRFR024N)
- Straight Lead (IRFU024N)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
- Ruggedized device design
- Extremely efficient device
Applications:
- Wide variety of applications
- Surface mounting using vapor phase, infrared, or wave soldering techniques (D-PAK)
- Through-hole mounting applications (IRFU series)
Package:
- D-PAK: Surface Mount
- Straight Lead: Through-hole mounting
Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| RθJC | Junction-to-Case | 3.3 | °C/W | |
| RθJA | Case-to-Ambient (PCB mount) ** | 50 | °C/W | |
| RθJA | Junction-to-Ambient | 110 | °C/W |
For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRFR/FU024N | Infineon Technologies | — |
| IRFR024N | Infineon Technologies | TO-252 |
| IRFR024NTRPBF | Infineon Technologies | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| IRFU024N | Infineon Technologies | — |
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