Discrete Semiconductors Datasheets
588 Discrete Semiconductors datasheets read into specs, pinouts and ratings. Parts from onsemi, Diodes and Infineon Technologies.
Discrete Semiconductors datasheets, page 8
588 parts · page 8 of 20. Most used first, then by part number.
DMP3099L-7
Diodes Incorporated
-30V P-channel enhancement mode MOSFET with 65mΩ max RDS(ON) at VGS=-10V and -3.8A continuous drain current, in SOT23 package, for power-management applications
DMP3099LQ
Diodes Incorporated
DTC114E
GOODWORK
NPN digital (resistor-equipped) transistor with built-in 10k/10k bias resistors for switching, inverter, interface and driver circuits
DTC114EE
GOODWORK
NPN digital (resistor-equipped) transistor with built-in 10k/10k bias resistors for switching, inverter, interface and driver circuits
DTC114EEB
GOODWORK
NPN digital (pre-biased) transistor with built-in 10k/10k bias resistors for switching, inverter, interface and driver circuits
DTC114EKA
GOODWORK
NPN digital (bias resistor built-in) transistor with 10k/10k integrated resistors for switching, inverter, interface and driver circuits
DTC114EM
GOODWORK
NPN digital transistor with built-in bias resistors (R1=R2=10kΩ), designed for switching and inverter applications.
DTC114EUA
GOODWORK
NPN digital transistor with built-in 10k/10k bias resistors for switching, inverter, interface and driver circuits; 50V, 100mA
DTC114EUB
GOODWORK
NPN digital (pre-biased) transistor with built-in 10kΩ/10kΩ bias resistors for switching, inverter, interface and driver circuits
ESD5Z
onsemi
Micro-packaged transient voltage suppressor diode series for ESD and transient protection of voltage-sensitive components in space-constrained portable designs
ESD5Z12T1
onsemi
Micro-packaged transient voltage suppressor diode for ESD protection with 12 V working voltage, 240 W peak power, in SOD-523 package
ESD5Z2.5T1
onsemi
Micro-packaged transient voltage suppressor diode for ESD protection in SOD-523, 2.5 V stand-off with fast response and low leakage
ESD5Z2.5T1G/T5G
onsemi
Micro-packaged transient voltage suppressor designed to protect voltage-sensitive components from ESD and transient voltage events.
ESD5Z3.3T1
onsemi
Micro-packaged transient voltage suppressor diode for ESD protection, 3.3 V working peak reverse voltage in a SOD-523 package
ESD5Z3.3T1G
onsemi
-55℃~+125℃ 1 110pF 11A 14V 150W 200nA 3.3V 5V ESD IEC 61000-4-2、IEC 61000-4-4 Unidirectional SOD-523 ESD and Surge Protection (TVS/ESD) ROHS
ESD5Z5.0T1
onsemi
Micro-packaged diode designed to protect voltage sensitive components from ESD and transient voltage events, offering excellent clamping capability, low leakage, and fast response time for space-constrained applications.
ESD5Z5.0T1G
onsemi
ESD5Z Series 6.2 V 80 pF 5 Vrwm TVS and ESD Protection Diodes - SOD-523
ESD5Z5.0T1G/T5G
onsemi
Micro-packaged transient voltage suppressor diode designed to protect voltage-sensitive components from ESD and transient voltage events.
ESD5Z6.0T1
onsemi
Micro-packaged transient voltage suppressor diode for ESD protection, 6.0 V working peak reverse voltage, in SOD-523 package
ESD5Z7.0T1
onsemi
Micro-packaged transient voltage suppressor diode for ESD protection, 7.0 V working peak reverse voltage, in a SOD-523 package
ESDA25L
STMicroelectronics
TVS DIODE 24VWM SOT23-3
FDC2512
onsemi
MOSFET N-CH 150V 1.4A SUPERSOT6
FDC6320C
onsemi
Dual complementary N- and P-channel logic level enhancement mode MOSFET with gate-source ESD zener, replacing NPN/PNP digital transistors in low-voltage load switching
FDS6679AZ
onsemi
-30V, -13A P-channel PowerTrench MOSFET with max 9.3mΩ RDS(on) at VGS=-10V, extended ±25V VGS range and 6kV HBM ESD protection, for power management and load switching.
FERD40H100S
STMicroelectronics
100 V, 40 A single field-effect rectifier diode (ST patented process) with low forward voltage drop and stable leakage current, intended for adapters, chargers and DC/DC converters.
FERD40H100SFP
STMicroelectronics
100 V, 40 A Field-effect rectifier diode optimized for efficiency in power supplies and converters.
FERD40H100SG-TR
STMicroelectronics
DIODE FERD 100V 40A D2PAK
FERD40H100STS
STMicroelectronics
100 V, 40 A field-effect rectifier diode with low forward voltage drop and stable leakage current, intended for adapters, chargers and DC/DC converters
FJL4215
onsemi
High-power NPN epitaxial silicon transistor (250 V, 17 A, 150 W, 30 MHz) for high-fidelity audio output and general purpose power amplifiers
FJL4315
onsemi
High-power NPN epitaxial silicon transistor (150 W, 17 A, 250 V, 30 MHz) for high-fidelity audio output and general purpose power amplifiers