DTC114E
NPN Digital Transistor with Bias ResistorsThe DTC114E is a npn digital transistor with bias resistors from GOODWORK. View the full DTC114E datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official DTC114E datasheet (PDF) — the source this page was extracted from.
DTC114E Key Specifications
| Parameter | Value |
|---|---|
| Input Resistor R1 | 10kΩ (7 to 13kΩ) |
| Power Dissipation | 150mW (VMT3/EMT3F/EMT3), 200mW (UMT3F/UMT3/SMT3) |
| Input Voltage (VIN) | -10V to +40V |
| Output Current (IO) | 50mA |
| Storage Temperature | -55°C to +150°C |
| DC Current Gain (GI) | 30 min (VO=5V, IO=5mA) |
| Input Voltage VI(On) | 3V min |
| Junction Temperature | 150°C |
| Supply Voltage (VCC) | 50V |
| Input Voltage VI(Off) | 0.5V max |
| Output Voltage VO(On) | 0.1V typ, 0.3V max (IO/II=10mA/0.5mA) |
| Resistance Ratio R2/R1 | 0.8 to 1.2 (R2 = 10kΩ) |
| Transition Frequency (FT) | 250MHz typ |
| Collector Current (IC Max) | 100mA |
DTC114E Overview
Part: DTC114E series — ROHM Co., Ltd.
Type: NPN Digital Transistor (Bias Resistor Transistor)
Description: 50 V, 100 mA NPN digital transistor with integrated 10 kΩ bias resistors for simplified inverter and switching circuit design.
Operating Conditions:
- Supply voltage: up to 50 V
Absolute Maximum Ratings:
- Max supply voltage: 50 V
- Max continuous current: 100 mA (collector current)
- Max junction/storage temperature: 150 °C
Key Specs:
- Input voltage (off) (V_I(off)): 0.5 V max (V_CC = 5 V, I_O = 100 μA, Ta = 25°C)
- Input voltage (on) (V_I(on)): 3 V min (V_O = 0.3 V, I_O = 10 mA, Ta = 25°C)
- Output voltage (on) (V_O(on)): 0.1 V typ, 0.3 V max (I_O / I_I = 10 mA / 0.5 mA, Ta = 25°C)
- Input current (I_I): 0.88 mA max (V_I = 5 V, Ta = 25°C)
- Output current (off) (I_O(off)): 0.5 μA max (V_CC = 50 V, V_I = 0 V, Ta = 25°C)
- DC current gain (G_I): 30 min (V_O = 5 V, I_O = 5 mA, Ta = 25°C)
- Input resistance (R_1): 7 kΩ min, 10 kΩ typ, 13 kΩ max
- Resistance ratio (R_2/R_1): 0.8 min, 1 typ, 1.2 max
- Transition frequency (f_T): 250 MHz typ (V_CE = 10 V, I_E = -5 mA, f = 100 MHz)
Features:
- Built-in biasing resistors, R1 = R2 = 10 kΩ
- Thin-film bias resistors with complete isolation allow negative input biasing and eliminate parasitic effects
- Configuration of inverter circuit without external input resistors
- Complementary PNP types available (DTA114E series)
- Lead Free / RoHS Compliant
Applications:
- Switching circuit
- Inverter circuit
- Interface circuit
- Driver circuit
Package:
- VMT3 (1.2 × 1.2 mm)
- EMT3F (1.6 × 1.6 mm)
- EMT3 (1.6 × 1.6 mm)
- UMT3F (2.0 × 2.1 mm)
- UMT3 (2.0 × 2.1 mm)
- SMT3 (2.9 × 2.8 mm)
DTC114E Features
-
- Built-In Biasing Resistors, R1 = R2 = 10k W .
-
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).
-
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.
-
- Only the on/off conditions need to be set for operation, making the circuit design easy.
-
- Complementary PNP Types :DTA114E series
-
- Complex transistors :EMH11 /UMH11N /IMH11A /EMG9 /UMG9N/ FMG9A ( NPN type )
-
- Lead Free/RoHS Compliant.
DTC114E Electrical Characteristics
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage | V I(off) | V CC = 5V, I O = 100μA | - | - | 0.5 | V |
| Input voltage | V I(on) | V O = 0.3V, I O = 10mA | 3 | - | - | V |
| Output voltage | V O(on) | I O / I I = 10mA / 0.5mA | - | 0.1 | 0.3 | V |
| Input current | I I | V I = 5V | - | - | 0.88 | mA |
| Output current | I O(off) | V CC = 50V, V I = 0V | - | - | 0.5 | m A |
| DC current gain | G I | V O = 5V, I O = 5mA | 30 | - | - | - |
| Input resistance | R 1 | - | 7 | 10 | 13 | k W |
| Resistance ratio | R 2 /R 1 | - | 0.8 | 1 | 1.2 | - |
| Transition frequency | f T *1 | V CE = 10V, I E = - 5mA, f = 100MHz | - | 250 | - | MHz |
DTC114E Absolute Maximum Ratings
| Parameter | Parameter | Symbol | Values | Unit |
|---|---|---|---|---|
| Supply voltage | Supply voltage | V CC | 50 | V |
| Input voltage | Input voltage | V IN | - 10 to + 40 | V |
| Output current | Output current | I O | 50 | mA |
| Collector current | Collector current | I C(MAX.) *1 | 100 | mA |
| Power dissipation | DTC114EM DTC114EEB DTC114EE | P D *2 | 150 | mW |
| Power dissipation | DTC114EUB DTC114EUA DTC114EKA | P D *2 | 200 | mW |
| Junction temperature | Junction temperature | T j | 150 | °C |
| Range of storage temperature | Range of storage temperature | T stg | - 55 to + 150 | °C |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
Other BJTs
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- 2N2222 – onsemi, NPN Silicon Amplifier Transistor
- 2N2222A – onsemi, NPN High Speed Switching Transistor
- 2N3906 – onsemi, PNP Silicon General Purpose Transistor
- 2N4921G – onsemi, NPN Medium-Power Silicon Transistor
- 2N4922G – onsemi, Medium-Power NPN Silicon Transistor
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