2N3906

Part: 2N3906 from onsemi

Type: PNP General Purpose Transistor

Description: A PNP silicon general purpose transistor with a 40 V collector-emitter breakdown voltage and 200 mAdc continuous collector current, available in a TO-92 package.

Operating Conditions:

• Supply voltage: Up to 40 V (Vceo/Vcbo)
• Operating temperature: -55 to +150 °C
• Max continuous collector current: 200 mAdc

Absolute Maximum Ratings:

• Max collector-emitter voltage: 40 Vdc
• Max collector-base voltage: 40 Vdc
• Max emitter-base voltage: 5.0 Vdc
• Max continuous current: 200 mAdc
• Max junction/storage temperature: -55 to +150 °C

Key Specs:

• Collector-Emitter Breakdown Voltage V(BR)CEO: 40 Vdc (min, at I C = 1.0 mAdc, I B = 0)
• DC Current Gain hFE: 100 (min, at I C = 10 mAdc, V CE = 1.0 Vdc)
• Collector-Emitter Saturation Voltage VCE(sat): 0.25 Vdc (max, at I C = 10 mAdc, I B = 1.0 mAdc)
• Base-Emitter Saturation Voltage VBE(sat): 0.85 Vdc (max, at I C = 10 mAdc, I B = 1.0 mAdc)
• Current-Gain-Bandwidth Product fT: 250 MHz (min, at I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)
• Output Capacitance Cobo: 4.5 pF (max, at V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
• Noise Figure NF: 4.0 dB (max, at I C = 100 m Adc, V CE = 5.0 Vdc, R S = 1.0 k W , f = 1.0 kHz)
• Delay Time t d: 35 ns (max, at V CC = 3.0 Vdc, V BE = 0.5 Vdc, I C = 10 mAdc, I B1 = 1.0 mAdc)

Features:

• Pb-Free Packages are Available

Applications:

Package:

• TO-92

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.