2N3906

Part 1: Markdown Summary

Part: ON Semiconductor 2N3906

Type: PNP Silicon General Purpose Transistor

Key Specs:

• Collector-Emitter Voltage: 40 Vdc
• Collector Current - Continuous: 200 mAdc
• Total Device Dissipation @ T_A = 25°C: 625 mW
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• DC Current Gain (h_FE) (min): 60
• Current-Gain - Bandwidth Product (f_T): 250 MHz

Features:

• Pb-Free Packages are Available

Applications:

• null

Package:

• null

• Pb-Free Packages are Available*

| | Characteristic | Symbol | Min | Max | Unit | |-------------------------------------------------------------------|-------------------------------------------------------|---------------------------------------------------------------------------------------|----------------------|-----------------------------|--------------------|--------------------| | OFF CHARACTERIS | TICS | | | | • | | Collector - Emitter Bre | eakdown Voltage (Note 2) | V _(BR)CEO | 40 | - | Vdc | | Collector - Base Brea | kdown Voltage | $(I_C = 10 \mu Adc, I_E = 0)$ | V _(BR)CBO | 40 | - | Vdc | | Emitter – Base Break | lown Voltage | $(I_E = 10 \mu Adc, I_C = 0)$ | V _(BR)EBO | 5.0 | - | Vdc | | Base Cutoff Current | | (V _CE = 30 Vdc, V _EB = 3.0 Vdc) | I _BL | - | 50 | nAdc | | Collector Cutoff Curre | nt | (V _CE = 30 Vdc, V _EB = 3.0 Vdc) | I _CEX | - | 50 | nAdc | | ON CHARACTERIST | ICS (Note 2) | | | • | | • | | DC Current Gain | | | h _FE | 60
80
100
60
30 | -
300
-
- | - | | Collector - Emitter Sa | uration Voltage | V _CE(sat) |
| 0.25
0.4 | Vdc | | Base – Emitter Satura | V _BE(sat) | 0.65
- | 0.85
0.95 | Vdc | | SMALL-SIGNAL CH | ARACTERISTICS | | Current-Gain - Band | width Product (I _C = 10 mA | dc, V _CE = 20 Vdc, f = 100 MHz) | f _T | 250 | _ | MHz | | Output Capacitance | (V _C | _B = 5.0 Vdc, I _E = 0, f = 1.0 MHz) | C _obo | - | 4.5 | pF | | Input Capacitance | (V _E | _B = 0.5 Vdc, I _C = 0, f = 1.0 MHz) | C _ibo | - | 10 | pF | | Input Impedance | (I _C = 1.0 m | Adc, V _CE = 10 Vdc, f = 1.0 kHz) | h _ie | 2.0 | 12 | kΩ | | Voltage Feedback Ra | tio (I _C = 1.0 m | Adc, V _CE = 10 Vdc, f = 1.0 kHz) | h _re | 0.1 | 10 | X 10 ^-4 | | Small-Signal Current | Gain (I _C = 1.0 m | Adc, V _CE = 10 Vdc, f = 1.0 kHz) | h _fe | 100 | 400 | - | | Output Admittance | (I _C = 1.0 m | Adc, V _CE = 10 Vdc, f = 1.0 kHz) | h _oe | 3.0 | 60 | μmhos | | Noise Figure | NF | - | 4.0 | dB | | SWITCHING CHARA | CTERISTICS | | Delay Time $(V_{CC} = 3.0 \text{ Vdc}, V_{BE} = 0.5 \text{ Vdc},$ | | t _d | - | 35 | ns | | Rise Time | | $I_C = 10 \text{ mAdc}, I_{B1} = 1.0 \text{ mAdc})$ | | - | 35 | ns | | Storage Time | $(V_{CC} = 3.0 \text{ Vdc}, I_{C} = 10 \text{ mAdc},$ | $I_{B1} = I_{B2} = 1.0 \text{ mAdc}$ | ts | - | 225 | ns | | Fall Time | $(V_{CC} = 3.0 \text{ Vdc}, I_{C} = 10 \text{ mAdc},$ | $V_{CC} = 3.0 \text{ Vdc}, I_C = 10 \text{ mAdc}, I_{B1} = I_{B2} = 1.0 \text{ mAdc}$ | | | 75 | ns |

Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2%.

ORDERING INFORMATION

^†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

^* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

^* Total shunt capacitance of test jig and connectors

Figure 2. Storage and Fall Time Equivalent Test Circuit

2N3906

TYPICAL TRANSIENT CHARACTERISTICS

Figure 6. Fall Time

TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

$(V_{CE} = -5.0 \text{ Vdc}, T_A = 25^{\circ}\text{C}, Bandwidth = 1.0 \text{ Hz})$

10 NF, NOISE FIGURE (dB) = 50 μA lc, $= 100 \mu A$ 2 40 0.2 2.0 4.0 20 100 0.1 0.4 1.0 R_q, SOURCE RESISTANCE (k OHMS)

Figure 7.

Figure 8.

h PARAMETERS

$(V_{CE} = -10 \text{ Vdc}, f = 1.0 \text{ kHz}, T_A = 25^{\circ}\text{C})$

Figure 9. Current Gain

Figure 10. Output Admittance

Figure 11. Input Impedance

Figure 12. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS

Figure 13. DC Current Gain

Figure 14. Collector Saturation Region

Figure 15. "ON" Voltages

Figure 16. Temperature Coefficients

TO-92 (TO-226) CASE 29-11 ISSUE AM

DATE 09 MAR 2007

STRAIGHT LEAD BULK PACK

NOTES:

• DIMENSIONING AND TOLERANCING PER ANSI

• Y14.5M, 1982. CONTROLLING DIMENSION: INCH. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

• LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

	INC	INCHES MILLIN		IETERS
DIM	MIN	MAX	MIN	MAX
Α	0.175	0.205	4.45	5.20
B	0.170	0.210	4.32	5.33
C	0.125	0.165	3.18	4.19
D	0.016	0.021	0.407	0.533
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.015	0.020	0.39	0.50
K	0.500		12.70
L	0.250		6.35
N	0.080	0.105	2.04	2.66
P		0.100		2.54
R	0.115		2.93
V	0.135		3 43

BENT LEAD TAPE & REEL AMMO PACK

NOTES:

• DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLEHANCING PER ASME Y14.5M, 1994. CONTROLLING DIMENSION: MILLIMETERS. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. LEAD DIMENSION IS UNCONTROLLED IN PARTICLE OF THE PROPERTY OF THE PROPERTY OF THE PROPERTY OF THE PER PER PER AND THE PER PER PER PER PER PER PER PER PER PE

• AND BEYOND DIMENSION K MINIMUM.

| | MILLIMETERS | |-----|-------------|------|--|--|--|--| | DIM | MIN | MAX | | Α | 4.45 | 5.20 | | B | 4.32 | 5.33 | | C | 3.18 | 4.19 | | D | 0.40 | 0.54 | | G | 2.40 | 2.80 | | J | 0.39 | 0.50 | | K | 12.70 | | N | 2.04 | 2.66 | | P | 1.50 | 4.00 | | R | 2.93 | | ٧ | 3.43 |

STYLES ON PAGE 2

| DOCUMENT NUMBER: | 98ASB42022B | Electronic versions are uncontrolled except when accessed directly from the Document Reposi
Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. | |------------------|----------------|--------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|-------------|--|--| | DESCRIPTION: | TO-92 (TO-226) | | PAGE 1 OF 2 | onsemi and ONSEMi are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.