BJTs Datasheets
89 BJTs datasheets read into specs, pinouts and ratings. Parts from onsemi, GOODWORK and Nexperia.
Manufacturers
- onsemi (69)
- GOODWORK (8)
- Nexperia (5)
- STMicroelectronics (4)
BJTs datasheets
89 parts · page 1 of 3. Most used first, then by part number.
DTC114ECA
GOODWORK
-55℃~+150℃ 1 NPN (Pre-Biased) 1.2 13kΩ 250MHz 30 300mV@10mA,0.5mA 300mW 3V 3V@10mA,0.3V 50V 50mA NPN SOT-23 Digital Transistors ROHS
BC847
onsemi
Bipolar Transistors - BJT SOT-23 NPN GP AMP
2N2219A
onsemi
Silicon Planar Epitaxial NPN transistor designed for high speed switching applications at collector current up to 500mA.
2N2222
onsemi
General-purpose NPN silicon amplifier transistor rated 40 V / 600 mA with 300 MHz gain-bandwidth product, in a TO-92 package.
2N2222A
onsemi
Silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for high speed switching applications at collector current up to 500mA, featuring useful current gain, low leakage currents, and low saturation voltage.
2N3906
onsemi
PNP Silicon General Purpose Transistor
2N4921G
onsemi
Medium-power plastic NPN silicon transistor for driver circuits, switching, and amplifier applications; 40 V, 1 A continuous, 30 W (discontinued part).
2N4922G
onsemi
60V, 1A continuous (3A peak), 30W medium-power plastic NPN silicon transistor for driver, switching, and amplifier applications; complement to PNP 2N4920G.
2N4923G
onsemi
80V, 1A (3A peak), 30W medium-power plastic NPN silicon transistor for driver circuits, switching, and amplifier applications; complement to PNP 2N4920G
2SA1020
onsemi
One-watt high current PNP bipolar transistor, 50 V, 2 A continuous collector current, Pb-free TO-92 package
2SA1943
onsemi
Datasheet is for the NPN complement parts (2SC5200 / FJL4315) of the 2SA1943 PNP audio power transistor; 250 V, 17 A, 150 W general-purpose and hi-fi audio output amplifier transistor.
2SA2039
onsemi
50V, 5A low collector-emitter saturation voltage PNP bipolar transistor (complementary to 2SC5706) for DC/DC converters, relay, lamp and motor drivers, and flash
2SC5200
onsemi
High-power NPN epitaxial silicon BJT for high-fidelity audio output amplifiers and general purpose power amplification, 250 V / 17 A / 150 W, complement to 2SA1943 / FJL4215
2SC5242
onsemi
High-voltage (250 V), 17 A NPN epitaxial silicon power transistor with 150 W dissipation and 30 MHz bandwidth, intended for high-fidelity audio output amplifiers
2SC5706
onsemi
50V, 5A NPN bipolar transistor with low collector-to-emitter saturation voltage, for DC/DC converters, relay/lamp/motor drivers and flash applications (PNP complement 2SA2039).
2SC6082
onsemi
50 V, 15 A low collector-to-emitter saturation voltage NPN bipolar transistor for high-speed switching applications such as switching regulators and driver circuits
BC327
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338.
BC32725BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338
BC32725TA
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338
BC32740BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338.
BC327BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338
BC546
onsemi
General-purpose NPN silicon small-signal amplifier transistor in TO-92 package, 65V VCEO with DC current gain up to 800
BC546B
onsemi
General-purpose NPN silicon small-signal amplifier transistor with 65 V collector-emitter breakdown voltage (BC546), hFE of 200-450 in B grade, and 300 MHz typical transition frequency
BC546BG
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546B, Pb-Free) in a TO-92 package, 65V VCEO with hFE 200-450
BC547
onsemi
General-purpose NPN silicon BJT amplifier transistor in TO-92 package, 45 V VCEO, for small-signal amplification
BC547A
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546/547/548 family) in TO-92, 45 V VCEO for BC547, with DC gain groups A/B/C
BC547B
onsemi
General-purpose NPN silicon BJT amplifier transistor in TO-92 package, part of BC546/547/548 family with 45V VCEO and hFE 200-450 for the B gain grade
BC547C
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC547 series) with 45V VCEO, high-gain C grade (hFE 420-800 at 2 mA)
BC548
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546/547/548 family) with 30V VCEO for BC548 and up to 800 hFE.
BC548B
onsemi
General-purpose NPN silicon small-signal amplifier transistor with 30V collector-emitter breakdown (BC548 variant) in a TO-92 package