BC548B
NPN Silicon Amplifier TransistorThe BC548B is a npn silicon amplifier transistor from onsemi. View the full BC548B datasheet below including key specifications, electrical characteristics.
BC548B shares its datasheet with BC546B, whose page lists every part number it covers.
Official BC548B datasheet (PDF) — the source this page was extracted from.
BC548B Key Specifications
| Parameter | Value |
|---|---|
| Noise Figure (NF) | 2.0dB typ, 10dB max |
| Transistor Polarity | NPN |
| Input Capacitance (Cibo) | 10pF typ |
| Output Capacitance (Cobo) | 1.7pF typ, 4.5pF max |
| Current Gain-Bandwidth Product (FT) | 300 MHz typ (150 MHz min) |
| DC Current Gain (HFE) At IC=2mA, VCE=5V | 200 to 450 (B grade), typ 290 |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 6.0V min |
| Collector Cutoff Current (ICES) At VCE=35V | 0.2nA typ, 15nA max |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 30V min (BC548) |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | 30V min (BC548) |
| Base-Emitter On Voltage (VBE(On)) At IC=2mA, VCE=5V | 0.55V to 0.7V |
| Small-Signal Current Gain (Hfe) At IC=2mA, VCE=5V, F=1kHz | 240 to 500 (B grade), typ 330 |
| Collector-Emitter Saturation Voltage (VCE(Sat)) At IC=10mA, IB=0.5mA | 0.09V typ, 0.25V max |
BC548B Overview
Part: BC546B, BC547A, B, C, BC548B, C — onsemi
Type: NPN Silicon Amplifier Transistors
Description: NPN silicon amplifier transistors featuring collector-emitter breakdown voltages up to 65 V and DC current gain (hFE) ranging from 110 to 800.
Key Specs:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 30 V (BC548) to 65 V (BC546) (I C = 1.0 mA, I B = 0)
- Collector-Base Breakdown Voltage (V(BR)CBO): 30 V (BC548) to 80 V (BC546) (I C = 100 m Adc)
- Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 V (I E = 10 m A, I C = 0)
- Collector Cutoff Current (I CES): 0.2 nA (typ) at V CE = 30-70 V, V BE = 0
- DC Current Gain (h FE): 200 (min) to 450 (max) for BC546B/547B/548B (I C = 10 mA, V CE = 5.0 V)
- Collector-Emitter Saturation Voltage (V CE(sat)): 0.09 V (typ) to 0.6 V (max) (I C = 100 mA, I B = 5.0 mA)
- Base-Emitter Saturation Voltage (V BE(sat)): 0.7 V (typ) (I C = 10 mA, I B = 0.5 mA)
- Current-Gain-Bandwidth Product (f T): 150 MHz (min) to 300 MHz (typ) (I C = 10 mA, V CE = 5.0 V, f = 100 MHz)
Features:
- Pb-Free Packages are Available
Package:
- TO-92 (TO-226)
BC548B Features
- Pb -Free Packages are Available*
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
*For additional information on our Pb -Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
BC548B Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||
| Collector - Emitter Breakdown Voltage (I C = 1.0 mA, I B = 0) | BC546 BC547 BC548 V (BR)CEO | 65 45 30 | - - - | - - - | V |
| Collector - Base Breakdown Voltage (I C = 100 m Adc) | BC546 BC547 BC548 V (BR)CBO | 80 50 30 | - - - | - - - | V |
| Emitter - Base Breakdown Voltage (I E = 10 m A, I C = 0) | BC546 BC547 BC548 V (BR)EBO | 6.0 6.0 6.0 | - - - | - - - | V |
| Collector Cutoff Current (V CE = 70 V, V BE = 0) (V CE = 50 V, V BE = 0) (V CE = 35 V, V BE = 0) (V CE = 30 V, T A = 125 ° C) | BC546 BC547 BC548 BC546/547/548 I CES | - - - - | 0.2 0.2 0.2 - | 15 15 15 4.0 | nA m A |
| ON CHARACTERISTICS | |||||
| DC Current Gain (I C = 10 m A, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) (I C = 100 mA, V CE = 5.0 V) | BC547A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C h FE | - - - 110 110 110 110 200 420 - - - | 90 150 270 - - - 180 290 520 120 180 300 | - - - 450 800 800 220 450 800 - - - | - |
| Collector - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) (I C = 100 mA, I B = 5.0 mA) (I C = 10 mA, I B = See Note 1) | V CE(sat) | - - - | 0.09 0.2 0.3 | 0.25 0.6 0.6 | V |
| Base - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) | V BE(sat) | - | 0.7 | - | V |
| Base - Emitter On Voltage (I C = 2.0 mA, V CE = 5.0 V) | V BE(on) | 0.55 | - - | 0.7 0.77 | V |
| (I C = 10 mA, V CE = 5.0 V) | - | 300 300 | - | ||
| SMALL - SIGNAL CHARACTERISTICS | |||||
| Current - Gain - Bandwidth Product (I C = 10 mA, V CE = 5.0 V, f = 100 MHz) | BC546 BC547 BC548 f T | 150 150 150 | 300 | - - | MHz |
| Output Capacitance (V CB = 10 V, I C = 0, f = 1.0 MHz) | C obo | - | 1.7 | 4.5 | pF |
| Input Capacitance (V EB = 0.5 V, I C = 0, f = 1.0 MHz) | C ibo | - | 10 | - | pF |
| Small - Signal Current Gain (I C = 2.0 mA, V CE = 5.0 V, f = 1.0 kHz) BC546 BC547/548 BC547A | BC546B/547B/548B BC547C/548C h fe | 125 125 125 240 450 | - - 220 330 600 | 500 900 260 500 900 | - |
| Noise Figure (I C = 0.2 mA, V CE = 5.0 V, R S = 2 k W , f = 1.0 kHz, D f = 200 Hz) BC546 BC547 | BC548 NF | - - - | 2.0 2.0 2.0 | 10 10 10 | dB |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
Other BJTs
- DTC114ECA – GOODWORK, NPN Digital Transistor with Bias Resistors
- BC847 – onsemi, NPN General-Purpose Transistor
- 2N2219A – onsemi, NPN High Speed Switching Transistor
- 2N2222 – onsemi, NPN Silicon Amplifier Transistor
- 2N2222A – onsemi, NPN High Speed Switching Transistor
- 2N3906 – onsemi, PNP Silicon General Purpose Transistor
- 2N4921G – onsemi, NPN Medium-Power Silicon Transistor
- 2N4922G – onsemi, Medium-Power NPN Silicon Transistor
Ask your AI agent about the BC548B
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the BC548B run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.