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BC547A

NPN Silicon Amplifier Transistor

The BC547A is a npn silicon amplifier transistor from onsemi. View the full BC547A datasheet below including key specifications, electrical characteristics.

BC547A shares its datasheet with BC546B, whose page lists every part number it covers.

Official BC547A datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

TO-92

BC547A Key Specifications

ParameterValue
Transistor PolarityNPN
Input Capacitance (Cibo)10 pF typ
Output Capacitance (Cobo)1.7 pF typ, 4.5 pF max
Package Dimensions (TO-92 Body)4.45 mm to 5.20 mm length, 4.32 mm to 5.33 mm height
Current-Gain-Bandwidth Product (FT)150 MHz min, 300 MHz typ
Collector Cutoff Current (ICES, VCE=50 V)0.2 nA typ, 15 nA max
Emitter-Base Breakdown Voltage (V(BR)EBO)6.0 V min
Base-Emitter On Voltage (IC=2.0 MA, VCE=5.0 V)0.55 V to 0.7 V
Noise Figure (IC=0.2 MA, VCE=5.0 V, RS=2 KOhm)2.0 dB typ, 10 dB max
DC Current Gain HFE (BC547A, IC=10 UA, VCE=5.0 V)90 typ
Collector-Base Breakdown Voltage (V(BR)CBO, BC547)50 V min
DC Current Gain HFE (BC547A, IC=2.0 MA, VCE=5.0 V)110 min, 180 typ, 220 max
Base-Emitter Saturation Voltage (IC=10 MA, IB=0.5 MA)0.7 V typ
Collector-Emitter Breakdown Voltage (V(BR)CEO, BC547)45 V min
Collector-Emitter Saturation Voltage (IC=10 MA, IB=0.5 MA)0.09 V typ, 0.25 V max
Collector-Emitter Saturation Voltage (IC=100 MA, IB=5.0 MA)0.2 V typ, 0.6 V max
Small-Signal Current Gain Hfe (BC547A, IC=2.0 MA, VCE=5.0 V, 1 KHz)125 min, 220 typ, 260 max

BC547A Overview

Part: BC546B, BC547A, B, C, BC548B, C — onsemi

Type: NPN Silicon Amplifier Transistors

Description: NPN silicon amplifier transistors featuring collector-emitter breakdown voltages up to 65 V and DC current gain (hFE) ranging from 110 to 800.

Key Specs:

  • Collector-Emitter Breakdown Voltage (V(BR)CEO): 30 V (BC548) to 65 V (BC546) (I C = 1.0 mA, I B = 0)
  • Collector-Base Breakdown Voltage (V(BR)CBO): 30 V (BC548) to 80 V (BC546) (I C = 100 m Adc)
  • Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 V (I E = 10 m A, I C = 0)
  • Collector Cutoff Current (I CES): 0.2 nA (typ) at V CE = 30-70 V, V BE = 0
  • DC Current Gain (h FE): 200 (min) to 450 (max) for BC546B/547B/548B (I C = 10 mA, V CE = 5.0 V)
  • Collector-Emitter Saturation Voltage (V CE(sat)): 0.09 V (typ) to 0.6 V (max) (I C = 100 mA, I B = 5.0 mA)
  • Base-Emitter Saturation Voltage (V BE(sat)): 0.7 V (typ) (I C = 10 mA, I B = 0.5 mA)
  • Current-Gain-Bandwidth Product (f T): 150 MHz (min) to 300 MHz (typ) (I C = 10 mA, V CE = 5.0 V, f = 100 MHz)

Features:

  • Pb-Free Packages are Available

Package:

  • TO-92 (TO-226)

BC547A Features

  • Pb -Free Packages are Available*

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

*For additional information on our Pb -Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

BC547A Electrical Characteristics

CharacteristicSymbolMinTypMaxUnit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (I C = 1.0 mA, I B = 0)BC546 BC547 BC548 V (BR)CEO65 45 30- - -- - -V
Collector - Base Breakdown Voltage (I C = 100 m Adc)BC546 BC547 BC548 V (BR)CBO80 50 30- - -- - -V
Emitter - Base Breakdown Voltage (I E = 10 m A, I C = 0)BC546 BC547 BC548 V (BR)EBO6.0 6.0 6.0- - -- - -V
Collector Cutoff Current (V CE = 70 V, V BE = 0) (V CE = 50 V, V BE = 0) (V CE = 35 V, V BE = 0) (V CE = 30 V, T A = 125 ° C)BC546 BC547 BC548 BC546/547/548 I CES- - - -0.2 0.2 0.2 -15 15 15 4.0nA m A
ON CHARACTERISTICS
DC Current Gain (I C = 10 m A, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) (I C = 100 mA, V CE = 5.0 V)BC547A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C h FE- - - 110 110 110 110 200 420 - - -90 150 270 - - - 180 290 520 120 180 300- - - 450 800 800 220 450 800 - - --
Collector - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) (I C = 100 mA, I B = 5.0 mA) (I C = 10 mA, I B = See Note 1)V CE(sat)- - -0.09 0.2 0.30.25 0.6 0.6V
Base - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)V BE(sat)-0.7-V
Base - Emitter On Voltage (I C = 2.0 mA, V CE = 5.0 V)V BE(on)0.55- -0.7 0.77V
(I C = 10 mA, V CE = 5.0 V)-300 300-
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (I C = 10 mA, V CE = 5.0 V, f = 100 MHz)BC546 BC547 BC548 f T150 150 150300- -MHz
Output Capacitance (V CB = 10 V, I C = 0, f = 1.0 MHz)C obo-1.74.5pF
Input Capacitance (V EB = 0.5 V, I C = 0, f = 1.0 MHz)C ibo-10-pF
Small - Signal Current Gain (I C = 2.0 mA, V CE = 5.0 V, f = 1.0 kHz) BC546 BC547/548 BC547ABC546B/547B/548B BC547C/548C h fe125 125 125 240 450- - 220 330 600500 900 260 500 900-
Noise Figure (I C = 0.2 mA, V CE = 5.0 V, R S = 2 k W , f = 1.0 kHz, D f = 200 Hz) BC546 BC547BC548 NF- - -2.0 2.0 2.010 10 10dB

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BC546BonsemiTO-92
BC547BonsemiTO-92
BC547ConsemiTO-92
BC548BonsemiTO-92

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All BJTs datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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