2N4922G

Part: 2N4921G, 2N4922G, 2N4923G — onsemi

Type: Medium-Power Plastic NPN Silicon Transistor

Description: General purpose NPN power transistors designed for driver circuits, switching, and amplifier applications, featuring 1.0 A continuous collector current, 40-80 V collector-emitter voltage, and 30 W total power dissipation.

Operating Conditions:

• Operating temperature: -65 to +150 °C
• Continuous collector current: 1.0 Adc

Absolute Maximum Ratings:

• Max collector-emitter voltage: 80 Vdc (for 2N4923G)
• Max collector-base voltage: 80 Vdc (for 2N4923G)
• Max emitter-base voltage: 5.0 Vdc
• Max continuous collector current: 1.0 Adc
• Max peak collector current: 3.0 Adc
• Max total power dissipation: 30 W (@T_C = 25 °C)
• Max junction/storage temperature: -65 to +150 °C

Key Specs:

• Collector-Emitter Sustaining Voltage (V_CEO(sus)): 40 Vdc (2N4921G, I_C = 0.1 Adc, I_B = 0)
• Collector Cutoff Current (I_CEO): 0.5 mAdc (V_CE = 20 Vdc, I_B = 0 for 2N4921G)
• DC Current Gain (h_FE): 40 (min, I_C = 50 mAdc, V_CE = 1.0 Vdc)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 0.6 Vdc (max, I_C = 1.0 Adc, I_B = 0.1 Adc)
• Base-Emitter Saturation Voltage (V_BE(sat)): 1.3 Vdc (max, I_C = 1.0 Adc, I_B = 0.1 Adc)
• Current-Gain-Bandwidth Product (f_T): 3.0 MHz (min, I_C = 250 mAdc, V_CE = 10 Vdc, f = 1.0 MHz)
• Output Capacitance (C_ob): 100 pF (max, V_CB = 10 Vdc, I_E = 0, f = 100 kHz)
• Thermal Resistance, Junction-to-Case (R_θJC): 4.16 °C/W

Features:

• Excellent Power Dissipation
• Low Saturation Voltage
• Excellent Safe Operating Area
• Pb-Free and RoHS Compliant
• Complement to PNP 2N4920G

Applications:

• Driver circuits
• Switching
• Amplifier applications

Package:

• TO-225

• Excellent Power Dissipation
• Low Saturation Voltage
• Excellent Safe Operating Area
• These Devices are Pb -Free and are RoHS Compliant**
• Complement to PNP 2N4920G

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. The 1.0 A maximum I C value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6).