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2N4921G

NPN Medium-Power Silicon Transistor

The 2N4921G is a npn medium-power silicon transistor from onsemi. View the full 2N4921G datasheet below including key specifications, absolute maximum ratings.

Official 2N4921G datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

TO-225

2N4921G Key Specifications

ParameterValue
Complement2N4920G (PNP)
Output Capacitance (Cob)100 pF max
Emitter-Base Voltage (VEB)5.0 Vdc
Power Derating Above 25°C0.24 W/°C
Collector-Base Voltage (VCB)40 Vdc
Base Current - Continuous (IB)1.0 A
Collector Current - Peak (ICM)3.0 A
Collector Cutoff Current (ICEO)0.5 mA max @ VCE=20 V
Collector-Emitter Voltage (VCEO)40 Vdc
Collector Current - Continuous (IC)1.0 A
Current-Gain-Bandwidth Product (FT)3.0 MHz min
DC Current Gain (HFE) @ IC=1 A, VCE=1 V10 min
Total Power Dissipation (PD @ TC=25°C)30 W
DC Current Gain (HFE) @ IC=50 MA, VCE=1 V40 min
Base-Emitter Saturation Voltage (VBE(Sat))1.3 V max @ IC=1 A, IB=0.1 A
DC Current Gain (HFE) @ IC=500 MA, VCE=1 V30 to 150
Operating And Storage Junction Temperature-65°C to +150°C
Thermal Resistance, Junction-To-Case (RθJC)4.16 °C/W
Collector-Emitter Saturation Voltage (VCE(Sat))0.6 V max @ IC=1 A, IB=0.1 A
Collector-Emitter Sustaining Voltage (VCEO(Sus))40 V min

2N4921G Overview

Part: 2N4921G, 2N4922G, 2N4923G — onsemi

Type: Medium-Power Plastic NPN Silicon Transistor

Description: General purpose NPN power transistors designed for driver circuits, switching, and amplifier applications, featuring 1.0 A continuous collector current, 40-80 V collector-emitter voltage, and 30 W total power dissipation.

Operating Conditions:

  • Operating temperature: -65 to +150 °C
  • Continuous collector current: 1.0 Adc

Absolute Maximum Ratings:

  • Max collector-emitter voltage: 80 Vdc (for 2N4923G)
  • Max collector-base voltage: 80 Vdc (for 2N4923G)
  • Max emitter-base voltage: 5.0 Vdc
  • Max continuous collector current: 1.0 Adc
  • Max peak collector current: 3.0 Adc
  • Max total power dissipation: 30 W (@T_C = 25 °C)
  • Max junction/storage temperature: -65 to +150 °C

Key Specs:

  • Collector-Emitter Sustaining Voltage (V_CEO(sus)): 40 Vdc (2N4921G, I_C = 0.1 Adc, I_B = 0)
  • Collector Cutoff Current (I_CEO): 0.5 mAdc (V_CE = 20 Vdc, I_B = 0 for 2N4921G)
  • DC Current Gain (h_FE): 40 (min, I_C = 50 mAdc, V_CE = 1.0 Vdc)
  • Collector-Emitter Saturation Voltage (V_CE(sat)): 0.6 Vdc (max, I_C = 1.0 Adc, I_B = 0.1 Adc)
  • Base-Emitter Saturation Voltage (V_BE(sat)): 1.3 Vdc (max, I_C = 1.0 Adc, I_B = 0.1 Adc)
  • Current-Gain-Bandwidth Product (f_T): 3.0 MHz (min, I_C = 250 mAdc, V_CE = 10 Vdc, f = 1.0 MHz)
  • Output Capacitance (C_ob): 100 pF (max, V_CB = 10 Vdc, I_E = 0, f = 100 kHz)
  • Thermal Resistance, Junction-to-Case (R_θJC): 4.16 °C/W

Features:

  • Excellent Power Dissipation
  • Low Saturation Voltage
  • Excellent Safe Operating Area
  • Pb-Free and RoHS Compliant
  • Complement to PNP 2N4920G

Applications:

  • Driver circuits
  • Switching
  • Amplifier applications

Package:

  • TO-225

2N4921G Features

  • Excellent Power Dissipation
  • Low Saturation Voltage
  • Excellent Safe Operating Area
  • These Devices are Pb -Free and are RoHS Compliant**
  • Complement to PNP 2N4920G

2N4921G Absolute Maximum Ratings

RatingSymbolValueUnit
Collector - Emitter Voltage 2N4921G 2N4922G 2N4923GV CEO40 60 80Vdc
Collector - Emitter Voltage 2N4921G 2N4922G 2N4923GV CB40 60 80Vdc
Emitter Base VoltageV EB5.0Vdc
Collector Current - Continuous (Note 2)I C1.0Adc
Collector Current - Peak (Note 2)I CM3.0Adc
Base Current - ContinuousI B1.0Adc
Total Power Dissipation @T C = 25 _ C Derate above 25 _ CP D30 0.24W mW/ _ C
Operating and Storage Junction Temperature RangeT J , T stg-65 to +150_ C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. The 1.0 A maximum I C value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6).

2N4921G Thermal Information

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction - to - CaseR q JC4.16_ C/W

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
2N4922GonsemiTO-225
2N4923GonsemiTO-225

Other BJTs

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  • BC847 – onsemi, NPN General-Purpose Transistor
  • 2N2219A – onsemi, NPN High Speed Switching Transistor
  • 2N2222 – onsemi, NPN Silicon Amplifier Transistor
  • 2N2222A – onsemi, NPN High Speed Switching Transistor
  • 2N3906 – onsemi, PNP Silicon General Purpose Transistor
  • 2N4922G – onsemi, Medium-Power NPN Silicon Transistor
  • 2N4923G – onsemi, NPN Medium-Power Silicon Transistor

All BJTs datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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