2N2222A
HIGH SPEED SWITCHES
Manufacturer
unknown
Overview
Part: 2N2219A, 2N2222A Type: NPN High Speed Switching Transistor
Key Specs:
- Collector-Base Voltage (Vcbo): 75 V
- Collector-Emitter Voltage (Vceo): 40 V
- Collector Current (Ic): 0.6 A
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.3 V (at Ic=150mA, Ib=15mA)
- Transition Frequency (fT): 300 MHz (Typ.)
- Max. Operating Junction Temperature (Tj): 175 °C
Features:
- Designed for high speed switching application
- Useful current gain over a wide range of collector current
- Low leakage currents
- Low saturation voltage
Applications:
- High speed switching application
Package:
- Jedec TO-39 (for 2N2219A): No dimensions provided
- Jedec TO-18 (for 2N2222A): No dimensions provided
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| I CBO | Collector Cut-off Current (I E = 0) | $V_{CB} = 60 \text{ V}$ $V_{CB} = 60 \text{ V}$ $T_j = 150 ^{\circ}\text{C}$ | 10 10 | nA μA | ||
| I CEX | Collector Cut-off Current (V BE = -3V) | V CE = 60 V | 10 | nA | ||
| I BEX | Base Cut-off Current (V BE = -3V) | VCE = 60 V | 20 | nA | ||
| I EBO | Emitter Cut-off Current (I C = 0) | V EB = 3 V | 9/ | 10 | nA | |
| V (BR)CBO | Collector-Base Breakdown Voltage (I E = 0) | I C = 10 μA | 75 | ) | V | |
| V (BR)CEO* | Collector-Emitter Breakdown Voltage (I B = 0) | Ic = 10 mA | 40 | V | ||
| V (BR)EBO | Emitter-Base Breakdown Voltage (I C = 0) | ΙΕ = 10 μΑ | 6 | V | ||
| V CE(sat)* | Collector-Emitter Saturation Voltage | $I_{C} = 150 \text{ mA}$ $I_{B} = 15 \text{ mA}$ $I_{C} = 500 \text{ mA}$ $I_{B} = 50 \text{ mA}$ | 0.3 1 | V V | ||
| V BE(sat)* | Base-Emitter Saturation Voltage | $I_{C} = 150 \text{ mA}$ $I_{B} = 15 \text{ mA}$ $I_{C} = 500 \text{ mA}$ $I_{B} = 50 \text{ mA}$ | 0.6 | 1.2 2 | V V | |
| h FE * | DC Current Gain | $\begin{array}{llllllllllllllllllllllllllllllllllll$ | 35 50 75 100 40 50 | 300 | ||
| h fe * | Small Signal Current Gain | $\begin{split} I_C = 1 &\text{ mA} &\text{ V}{CE} = 10 \text{ V} &\text{ f} = 1\text{KHz} \ I_C = 10 &\text{ mA} &\text{ V}{CE} = 10 \text{ V} &\text{ f} = 1\text{KHz} \end{split}$ | 50 75 | 300 375 | ||
| f T | Transition Frequency | I C = 20 mA V CE = 20 V f = 100 MHz | 300 | MHz | ||
| CEBO | Emitter-Base Capacitance | I C = 0 V EB = 0.5 V f = 100KHz | 25 | pF | ||
| Ccвo | Collector-Base Capacitance | I E = 0 V CB = 10 V f = 100 KHz | 8 | pF | ||
| R e(hie) | Real Part of Input Impedance | I C = 20 mA V CE = 20 V f = 300MHz | 60 | Ω |
* Pulsed: Pulse duration = 300 μs, duty cycle ≤ 1 %
ELECTRICAL CHARACTERISTICS (continued)
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|
| NF | Noise Figure | $\begin{split} I_C &= 0.1 \text{ mA} V_{CE} = 10 \text{ V} \ f &= 1 \text{KHz} R_g = 1 \text{K}\Omega \end{split}$ | 4 | dB | ||
| h ie | Input Impedance | I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V | 2 0.25 | 8 1.25 | kΩ kΩ | |
| h re | Reverse Voltage Ratio | I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V | 8 4 | 10 -4 | ||
| h oe | Output Admittance | I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V | 5 25 | 35 200 | μS μS | |
| t d ** | Delay Time | $V_{CC} = 30 \text{ V}$ $I_{C} = 150 \text{ mA}$ $I_{B1} = 15 \text{ mA}$ $V_{BB} = -0.5 \text{ V}$ | 10 | ns | ||
| t r ** | Rise Time | $V_{CC} = 30 \text{ V}$ $I_{C} = 150 \text{ mA}$ $I_{B1} = 15 \text{ mA}$ $V_{BB} = -0.5 \text{ V}$ | 25 | ns | ||
| ts** | Storage Time | V CC = 30 V | 09/ | 225 | ns | |
| t f ** | Fall Time | V CC = 30 V | 6/ | 60 | ns | |
| r bb , C b ,c | Feedback Time | I C = 20 mA V CE = 20 V | , | 150 | ps | |
| Pulsed: Puls * See test cir | Constant e duration = 300 μs, duty cycle ≤ cuit | 60' | ||||
| * Pulsed: Puls ** See test cir | Constant e duration = 300 μs, duty cycle ≤ | 1 % | ||||
| 47/ |
Test Circuit fot td, tr.
Test Circuit fot td, tr.
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| Vcвo | Collector-Base Voltage (I E = 0) | 75 | V |
| V CEO | Collector-Emitter Voltage (I B = 0) | 40 | V |
| $V_{EBO}$ | Emitter-Base Voltage (I C = 0) | 6 | V |
| Ic | Collector Current | 0.6 | Α |
| I CM | Collector Peak Current (t p < 5 ms) | 0.8 | A |
| P tot | Total Dissipation at $T_{amb} \le 25$ °C for 2N2219A for 2N2222A at $T_C \le 25$ °C for 2N2219A for 2N2222A | 0.8 0.5 3 1.8 | W W W |
| T stg | Storage Temperature | -65 to 175 | °C |
| Tj | Max. Operating Junction Temperature | 175 | °C |
February 2003
THERMAL DATA
| | | | TO-39 | TO-18 | |-----------------------|-------------------------------------|-----|-------|-------|------| | R thj-case | Thermal Resistance Junction-Case | Max | 50 | 83.3 | °C/W | | R thj-amb | Thermal Resistance Junction-Ambient | Max | 187.5 | 300 | °C/W |
Thermal Information
| | | | TO-39 | TO-18 | |-----------------------|-------------------------------------|-----|-------|-------|------| | R thj-case | Thermal Resistance Junction-Case | Max | 50 | 83.3 | °C/W | | R thj-amb | Thermal Resistance Junction-Ambient | Max | 187.5 | 300 | °C/W |
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