2N22XXA

Part: 2N2219A, 2N2222A from STMicroelectronics

Type: NPN Transistor

Description: Silicon Planar Epitaxial NPN transistors designed for high speed switching applications at collector current up to 500mA, featuring useful current gain over a wide range of collector current, low leakage currents, and low saturation voltage.

Operating Conditions:

• Supply voltage: not applicable
• Operating temperature: up to 175 °C (Junction)
• Max collector current: 500 mA

Absolute Maximum Ratings:

• Max Collector-Base Voltage (V_CBO): 75 V
• Max Collector-Emitter Voltage (V_CEO): 40 V
• Max continuous collector current: 0.6 A
• Max junction temperature: 175 °C
• Max storage temperature: -65 to 175 °C

Key Specs:

• Collector-Emitter Saturation Voltage (V_CE(sat)): 0.3 V (I_C = 150 mA, I_B = 15 mA)
• Base-Emitter Saturation Voltage (V_BE(sat)): 0.6 V (I_C = 150 mA, I_B = 15 mA)
• DC Current Gain (h_FE): 100 (I_C = 150 mA, V_CE = 10 V)
• Transition Frequency (f_T): 300 MHz (I_C = 20 mA, V_CE = 20 V, f = 100 MHz)
• Delay Time (t_d): 10 ns (V_CC = 30 V, I_C = 150 mA, I_B1 = 15 mA)
• Rise Time (t_r): 25 ns (V_CC = 30 V, I_C = 150 mA, I_B1 = 15 mA)
• Storage Time (t_s): 225 ns (V_CC = 30 V, I_C = 150 mA, I_B1 = -I_B2 = 15 mA)
• Fall Time (t_f): 60 ns (V_CC = 30 V, I_C = 150 mA, I_B1 = -I_B2 = 15 mA)

Features:

• High speed switching application
• Useful current gain over a wide range of collector current
• Low leakage currents
• Low saturation voltage

Applications:

• High speed switching applications

Package:

• TO-39 (for 2N2219A)
• TO-18 (for 2N2222A)

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