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BC847

NPN General-Purpose Transistor

The BC847 is a npn general-purpose transistor from onsemi. View the full BC847 datasheet below including key specifications, pinout.

Official BC847 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

SOT23, SOT323, SOT416, SOT883

BC847 Key Specifications

ParameterValue
PackagingReel
Standard Pack Qty3000
DC Current Gain (HFE)110 to 800
Collector Current (IC)100 mA
Junction Temperature (Tj)150 °C
Transition Frequency (FT)100 MHz
Emitter-Base Voltage (VEBO)6 V
Collector-Base Voltage (VCBO)50 V
SOT883 Package Body Dimensions1.0 x 0.6 x 0.5 mm
Total Power Dissipation (Ptot)150 mW to 250 mW
Collector-Emitter Voltage (VCEO)45 V
Operating Temperature Range (Tamb)-65 °C to +150 °C

BC847 Overview

Part: BC847 series — Nexperia

Type: NPN General-Purpose Transistor

Description: 45 V, 100 mA NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages, offering three different gain selections.

Operating Conditions:

  • Collector-emitter voltage: up to 45 V
  • Operating temperature: -65 to +150 °C
  • DC current gain (hFE): 110 to 800 (at VCE = 5 V; IC = 2 mA)

Absolute Maximum Ratings:

  • Max collector-base voltage: 50 V
  • Max collector-emitter voltage: 45 V
  • Max emitter-base voltage: 6 V
  • Max continuous collector current: 100 mA
  • Max junction temperature: 150 °C
  • Max storage temperature: -65 to +150 °C

Key Specs:

  • Collector-base cut-off current (ICBO): 15 nA (V_CB = 30 V; I_E = 0 A)
  • Emitter-base cut-off current (IEBO): 100 nA (V_EB = 5 V; I_C = 0 A)
  • DC current gain (hFE group B): 200 to 450 (V_CE = 5 V; I_C = 2 mA)
  • Collector-emitter saturation voltage (V_CEsat): 90 mV (typ, I_C = 10 mA; I_B = 0.5 mA)
  • Base-emitter saturation voltage (V_BEsat): 700 mV (typ, I_C = 10 mA; I_B = 0.5 mA)
  • Transition frequency (fT): 100 MHz (min, V_CE = 5 V; I_C = 10 mA; f = 100 MHz)
  • Collector capacitance (Cc): 1.5 pF (max, V_CB = 10 V; I_E = i_e = 0 A; f = 1 MHz)
  • Noise figure (NF): 2 dB (typ, I_C = 200 μA; V_CE = 5 V; R_S = 2 kΩ; f = 1 kHz; B = 200 Hz)

Features:

  • General-purpose transistors
  • SMD plastic packages
  • Three different gain selections
  • AEC-Q101 qualified

Applications:

  • General-purpose switching and amplification

Package:

  • SOT23 (TO-236AB)
  • SOT323 (SC-70)
  • SOT416 (SC-75)
  • SOT883 (SC-101)

BC847 Features

  • General-purpose transistors
  • SMD plastic packages
  • Three different gain selections
  • AEC-Q101 qualified

BC847 Applications

  • General-purpose switching and amplification

Product data sheet

BC847 Pin Configuration

BC847 — SOT-23 Package Pinout

Pin NumberPin NameTypeDescription
1BIBase
2EOEmitter
3COCollector

Notes

  • BC847 is an NPN transistor in SOT-23 package with three pins: Base (B), Emitter (E), and Collector (C).
  • Pin numbers extracted from the package diagram image (authoritative source).
  • Maximum ratings for BC847: V_CEO = 45V, V_CBO = 50V, P_C = 200mW.
  • Available in variants BC847, BC847A, BC847B, BC847C with different h_FE ranges; pinout is identical across all variants.

BC847 Thermal Information

Table 7. Thermal characteristics

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambientin free air[1]
SOT23--500K/W
SOT323--625K/W
SOT416--833K/W
SOT883[2]--500K/W

[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.

45 V, 100 mA NPN general-purpose transistors

BC847 Package Information

BC847 Ordering Information

MPNPackage Type
BC847SOT23
BC847ASOT23
BC847BSOT23
BC847CSOT23
BC847WSOT323 (SC-70)
BC847AWSOT323 (SC-70)
BC847BWSOT323 (SC-70)
BC847CWSOT323 (SC-70)
BC847TSOT416 (SC-75)
BC847ATSOT416 (SC-75)
BC847BTSOT416 (SC-75)
BC847CTSOT416 (SC-75)
BC847AMSOT883 (SC-101)
BC847BMSOT883 (SC-101)
BC847CMSOT883 (SC-101)

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BC847AonsemiSOT23
BC847AMonsemiSOT883
BC847ATonsemiSOT416
BC847AWonsemiSOT323
BC847BonsemiSOT-23
BC847BMonsemiSOT883
BC847BTonsemiSOT416
BC847BWonsemiSOT323
BC847ConsemiSOT-23
BC847CMonsemiSOT883
BC847CTonsemiSOT416
BC847CWonsemiSOT323
BC847TonsemiSOT416
BC847WonsemiSOT323

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  • 2N4923G – onsemi, NPN Medium-Power Silicon Transistor

All BJTs datasheetsAll onsemi datasheets (338)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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