BC847B
NPN General-Purpose TransistorThe BC847B is a npn general-purpose transistor from onsemi. View the full BC847B datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official BC847B datasheet (PDF) — the source this page was extracted from.
BC847B Key Specifications
| Parameter | Value |
|---|---|
| Collector-Base Breakdown Voltage (BC846) | 80 V (min) at I_C=10μA, I_E=0 |
| Collector-Emitter Breakdown Voltage (BC846) | 65 V (min) at I_C=10mA, I_B=0 |
| Emitter-Base Breakdown Voltage | 6.0 V (min) at I_E=10μA, I_C=0 |
| Collector-Base cut-off current (BC846) | 0.1 μA (max) at V_CB=70V, I_E=0 |
| DC Current Gain (BC847B) | 200-450 at I_C=2mA, V_CE=5.0V |
| Collector-Emitter Saturation Voltage | 0.5 V (max) at I_C=100mA, I_B=5mA |
| Base-Emitter Saturation Voltage | 1.1 V (max) at I_C=100mA, I_B=5mA |
| Transition frequency | 100 MHz (min) at I_C=10mA, V_CE=5V, f=100MHz |
BC847B Overview
Part: BC846-BC848 series Type: NPN Transistor Description: NPN transistors in SOT-23 package with collector-emitter voltage up to 65 V, collector current of 0.1 A, and power dissipation of 200 mW.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max Collector-Base Voltage (BC846): 80 V
- Max Collector-Emitter Voltage (BC846): 65 V
- Max continuous Collector Current: 0.1 A
- Max Collector Power Dissipation: 200 mW
- Max junction/storage temperature: 150 °C
Key Specs:
- Collector-Base Breakdown Voltage (BC846): 80 V (min) at I_C=10μA, I_E=0
- Collector-Emitter Breakdown Voltage (BC846): 65 V (min) at I_C=10mA, I_B=0
- Emitter-Base Breakdown Voltage: 6.0 V (min) at I_E=10μA, I_C=0
- Collector-Base cut-off current (BC846): 0.1 μA (max) at V_CB=70V, I_E=0
- DC Current Gain (BC847B): 200-450 at I_C=2mA, V_CE=5.0V
- Collector-Emitter Saturation Voltage: 0.5 V (max) at I_C=100mA, I_B=5mA
- Base-Emitter Saturation Voltage: 1.1 V (max) at I_C=100mA, I_B=5mA
- Transition frequency: 100 MHz (min) at I_C=10mA, V_CE=5V, f=100MHz
Features:
- Complementary to BC856 THRU BC858
- Power dissipation of 200mW
- High stability and high reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
Package:
- SOT-23
BC847B Features
- ·Complementary to BC856 THRU BC858
- ·Power dissipation of 200mW
- ·High stability and high reliability
- ·Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
BC847B Electrical Characteristics
| PARAMETER | SYMBOL | UNIT | Condition | Condition | Min | Max |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | I C =10μA, I E =0 | BC846 | 80 | - | ||
| Collector-Base Breakdown Voltage | V (BR)CBO | I C =10μA, I E =0 | BC847 | 50 | - | |
| Collector-Base Breakdown Voltage | I C =10μA, I E =0 | BC848 | 30 | - | ||
| Collector-Emitter Breakdown Voltage | V (BR)CEO | V | I C =10mA, I B =0 | BC846 | 65 | - |
| Collector-Emitter Breakdown Voltage | I C =10mA, I B =0 | BC847 | 45 | - | ||
| Collector-Emitter Breakdown Voltage | I C =10mA, I B =0 | BC848 | 30 | - | ||
| Emitter-Base Breakdown Voltage | V (BR)EBO | I E =10μA, I C =0 | I E =10μA, I C =0 | 6.0 | - | |
| Collector-Base cut-off current | I CBO | μA | V CB =70V, I E =0 | BC846 | - | 0.1 |
| Collector-Base cut-off current | μA | V CB =50V, I E =0 | BC847 | - | 0.1 | |
| Collector-Base cut-off current | μA | V CB =30V, I E =0 | BC848 | - | 0.1 | |
| Collector-Emitter cut-off current | μA | V CE =60V, I B =0 | BC846 | - | 0.1 | |
| Collector-Emitter cut-off current | I CEO | μA | V CE =45V, I B =0 | BC847 | - | 0.1 |
| Collector-Emitter cut-off current | μA | V CE =30V, I B =0 | BC848 | - | 0.1 | |
| Emitter-Base cut-off current | I EBO | μA | V EB =5.0V, I C =0 | V EB =5.0V, I C =0 | - | 0.1 |
| DC Current Gain | h FE | - | I C =2mA, V CE =5.0V | BC846A,847A,848A | 110 | 220 |
| DC Current Gain | - | I C =2mA, V CE =5.0V | BC846B,847B,848B | 200 | 450 | |
| DC Current Gain | - | I C =2mA, V CE =5.0V | BC847C,BC848C | 420 | 800 | |
| Collector-Emitter Saturation Voltage | V CE(sat) | V | I C =100mA, I B =5mA | I C =100mA, I B =5mA | - | 0.5 |
| Base-Emitter Saturation Voltage | V BE(sat) | V | I C =100mA, I B =5mA | I C =100mA, I B =5mA | - | 1.1 |
BC847B Absolute Maximum Ratings
| PARAMETER | SYMBOL | UNIT | CONDLITIONS | VALUE |
|---|---|---|---|---|
| Collector-Base Voltage | V CBO | V | BC846 BC847 BC848 | 80 50 30 |
| Collector-Emitter Voltage | V CEO | BC846 BC847 BC848 | 65 45 30 | |
| Emitter-Base Voltage Collector Current | V EBO I C | A | - - | 6.0 0.1 |
| Collector Power Dissipation Storage temperature | P C T stg | mW °C | - | 200 -55 ~+150 |
| Typical Thermal Resistance | R θJ-A | °C | - | |
| Junction temperature | T j | - | -55 ~+150 | |
| °C/W | - | 625 |
BC847B Package Information
- ·Case: SOT-23 Molding compound meets UL 94V-0 flammability rating, RoHScompliant,halogen-free
- ·Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
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These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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