BC848B
NPN General-Purpose TransistorThe BC848B is a npn general-purpose transistor from onsemi. View the full BC848B datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
BC848B shares its datasheet with BC847B, whose page lists every part number it covers.
Official BC848B datasheet (PDF) — the source this page was extracted from.
BC848B Key Specifications
| Parameter | Value |
|---|---|
| Polarity | NPN |
| Device Marking Code | 1K |
| Collector Current (IC) | 0.1A |
| Power Dissipation (PC) | 200mW |
| Transition Frequency (FT) | 100MHz min |
| Emitter-Base Voltage (VEBO) | 6.0V |
| Thermal Resistance (RθJ-A) | 625°C/W |
| Collector-Base Voltage (VCBO) | 30V |
| Operating/Storage Temperature | -55°C to +150°C |
| Collector-Emitter Voltage (VCEO) | 30V |
| DC Current Gain (HFE) At IC=2mA, VCE=5V | 200 to 450 |
| Base-Emitter Saturation Voltage (VBE(Sat)) | 1.1V max at IC=100mA, IB=5mA |
| Collector-Emitter Saturation Voltage (VCE(Sat)) | 0.5V max at IC=100mA, IB=5mA |
BC848B Overview
Part: BC846-BC848 series Type: NPN Transistor Description: NPN transistors in SOT-23 package with collector-emitter voltage up to 65 V, collector current of 0.1 A, and power dissipation of 200 mW.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max Collector-Base Voltage (BC846): 80 V
- Max Collector-Emitter Voltage (BC846): 65 V
- Max continuous Collector Current: 0.1 A
- Max Collector Power Dissipation: 200 mW
- Max junction/storage temperature: 150 °C
Key Specs:
- Collector-Base Breakdown Voltage (BC846): 80 V (min) at I_C=10μA, I_E=0
- Collector-Emitter Breakdown Voltage (BC846): 65 V (min) at I_C=10mA, I_B=0
- Emitter-Base Breakdown Voltage: 6.0 V (min) at I_E=10μA, I_C=0
- Collector-Base cut-off current (BC846): 0.1 μA (max) at V_CB=70V, I_E=0
- DC Current Gain (BC847B): 200-450 at I_C=2mA, V_CE=5.0V
- Collector-Emitter Saturation Voltage: 0.5 V (max) at I_C=100mA, I_B=5mA
- Base-Emitter Saturation Voltage: 1.1 V (max) at I_C=100mA, I_B=5mA
- Transition frequency: 100 MHz (min) at I_C=10mA, V_CE=5V, f=100MHz
Features:
- Complementary to BC856 THRU BC858
- Power dissipation of 200mW
- High stability and high reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
Package:
- SOT-23
BC848B Features
- ·Complementary to BC856 THRU BC858
- ·Power dissipation of 200mW
- ·High stability and high reliability
- ·Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
BC848B Electrical Characteristics
| PARAMETER | SYMBOL | UNIT | Condition | Condition | Min | Max |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | I C =10μA, I E =0 | BC846 | 80 | - | ||
| Collector-Base Breakdown Voltage | V (BR)CBO | I C =10μA, I E =0 | BC847 | 50 | - | |
| Collector-Base Breakdown Voltage | I C =10μA, I E =0 | BC848 | 30 | - | ||
| Collector-Emitter Breakdown Voltage | V (BR)CEO | V | I C =10mA, I B =0 | BC846 | 65 | - |
| Collector-Emitter Breakdown Voltage | I C =10mA, I B =0 | BC847 | 45 | - | ||
| Collector-Emitter Breakdown Voltage | I C =10mA, I B =0 | BC848 | 30 | - | ||
| Emitter-Base Breakdown Voltage | V (BR)EBO | I E =10μA, I C =0 | I E =10μA, I C =0 | 6.0 | - | |
| Collector-Base cut-off current | I CBO | μA | V CB =70V, I E =0 | BC846 | - | 0.1 |
| Collector-Base cut-off current | μA | V CB =50V, I E =0 | BC847 | - | 0.1 | |
| Collector-Base cut-off current | μA | V CB =30V, I E =0 | BC848 | - | 0.1 | |
| Collector-Emitter cut-off current | μA | V CE =60V, I B =0 | BC846 | - | 0.1 | |
| Collector-Emitter cut-off current | I CEO | μA | V CE =45V, I B =0 | BC847 | - | 0.1 |
| Collector-Emitter cut-off current | μA | V CE =30V, I B =0 | BC848 | - | 0.1 | |
| Emitter-Base cut-off current | I EBO | μA | V EB =5.0V, I C =0 | V EB =5.0V, I C =0 | - | 0.1 |
| DC Current Gain | h FE | - | I C =2mA, V CE =5.0V | BC846A,847A,848A | 110 | 220 |
| DC Current Gain | - | I C =2mA, V CE =5.0V | BC846B,847B,848B | 200 | 450 | |
| DC Current Gain | - | I C =2mA, V CE =5.0V | BC847C,BC848C | 420 | 800 | |
| Collector-Emitter Saturation Voltage | V CE(sat) | V | I C =100mA, I B =5mA | I C =100mA, I B =5mA | - | 0.5 |
| Base-Emitter Saturation Voltage | V BE(sat) | V | I C =100mA, I B =5mA | I C =100mA, I B =5mA | - | 1.1 |
BC848B Absolute Maximum Ratings
| PARAMETER | SYMBOL | UNIT | CONDLITIONS | VALUE |
|---|---|---|---|---|
| Collector-Base Voltage | V CBO | V | BC846 BC847 BC848 | 80 50 30 |
| Collector-Emitter Voltage | V CEO | BC846 BC847 BC848 | 65 45 30 | |
| Emitter-Base Voltage Collector Current | V EBO I C | A | - - | 6.0 0.1 |
| Collector Power Dissipation Storage temperature | P C T stg | mW °C | - | 200 -55 ~+150 |
| Typical Thermal Resistance | R θJ-A | °C | - | |
| Junction temperature | T j | - | -55 ~+150 | |
| °C/W | - | 625 |
BC848B Package Information
- ·Case: SOT-23 Molding compound meets UL 94V-0 flammability rating, RoHScompliant,halogen-free
- ·Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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