2N2222

NPN Silicon Amplifier Transistor

The 2N2222 is a npn silicon amplifier transistor from onsemi. View the full 2N2222 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official 2N2222 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

2N2222 Key Specifications

Parameter	Value
Polarity	NPN
Noise Figure	4.0 dB max
Fall Time (Tf)	60 ns max
Storage Time (Ts)	225 ns max
Turn-On Delay Time (Td)	10 ns max
Input Capacitance (Cibo)	25 pF max
Output Capacitance (Cobo)	8.0 pF max
Emitter-Base Voltage (VEBO)	6.0 V
Collector-Base Voltage (VCBO)	75 V
Collector Current (Continuous)	600 mA
Collector-Emitter Voltage (VCEO)	40 V
Current-Gain Bandwidth Product (FT)	300 MHz min
Thermal Resistance Junction To Case	83.3 °C/W
Total Device Dissipation (TA=25°C)	625 mW
Total Device Dissipation (TC=25°C)	1.5 W
Thermal Resistance Junction To Ambient	200 °C/W
Operating And Storage Junction Temperature	-55°C to +150°C
DC Current Gain (HFE) At IC=150 MA, VCE=10 V	100 to 300
Collector-Emitter Saturation Voltage (IC=150 MA)	0.3 V max

2N2222 Overview

Part: P2N2222A, onsemi

Type: NPN Silicon Amplifier Transistor

Description: A general-purpose NPN silicon amplifier transistor with a collector-emitter breakdown voltage of 40 Vdc, a continuous collector current of 600 mAdc, and a current-gain-bandwidth product of 300 MHz.

Operating Conditions:

Max continuous collector current: 600 mAdc
Operating temperature: -55 to +150 °C

Absolute Maximum Ratings:

Max Collector-Emitter Voltage: 40 Vdc
Max Collector-Base Voltage: 75 Vdc
Max Emitter-Base Voltage: 6.0 Vdc
Max continuous current: 600 mAdc
Max junction/storage temperature: +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 Vdc (I_C = 10 mAdc, I_B = 0)
Collector-Base Breakdown Voltage (V(BR)CBO): 75 Vdc (I_C = 10 mAdc, I_E = 0)
DC Current Gain (hFE): 100-300 (I_C = 150 mAdc, V_CE = 10 Vdc)
Collector-Emitter Saturation Voltage (VCE(sat)): 0.3 Vdc (I_C = 150 mAdc, I_B = 15 mAdc)
Base-Emitter Saturation Voltage (VBE(sat)): 0.6-1.2 Vdc (I_C = 150 mAdc, I_B = 15 mAdc)
Current-Gain-Bandwidth Product (fT): 300 MHz (I_C = 20 mAdc, V_CE = 20 Vdc, f = 100 MHz)
Output Capacitance (Cobo): 8.0 pF (V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
Delay Time (td): 10 ns (V_CC = 30 Vdc, V_BE(off) = -2.0 Vdc, I_C = 150 mAdc, I_B1 = 15 mAdc)

Features:

Pb-Free Devices

Applications:

Package:

TO-92 (3-pin)

2N2222 Electrical Characteristics

Characteristic	Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0)	V (BR)CEO	40	-	Vdc
Collector - Base Breakdown Voltage (I C = 10 m Adc, I E = 0)	V (BR)CBO	75	-	Vdc
Emitter - Base Breakdown Voltage (I E = 10 m Adc, I C = 0)	V (BR)EBO	6.0	-	Vdc
Collector Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc)	I CEX	-	10	nAdc
Collector Cutoff Current (V CB = 60 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0, T A = 150 ° C)	I CBO	- -	0.01 10	m Adc
Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0)	I EBO	-	10	nAdc
Collector Cutoff Current (V CE = 10 V)	I CEO	-	10	nAdc
Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc)	I BEX	-	20	nAdc
ON CHARACTERISTICS
DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc, T A = - 55 ° C) (I C = 150 mAdc, V CE = 10 Vdc) (Note 1) (I C = 150 mAdc, V CE = 1.0 Vdc) (Note 1) (I = 500 mAdc, V = 10 Vdc) (Note 1)	h FE	35 50 75 35 100 50 40	- - - - 300 - -	-
Collector - Emitter Saturation Voltage (Note 1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc)	V CE(sat)	- -	0.3 1.0	Vdc
Base - Emitter Saturation Voltage (Note 1) (I C = 150 mAdc, I B = 15 mAdc) (I = 500 mAdc, I = 50 mAdc)	V BE(sat)	0.6 -	1.2 2.0	Vdc
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (Note 2) (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)C	f T	300	-	MHz
Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz)	C obo	-	8.0	pF
Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)	C ibo	-	25	pF
Input Impedance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h ie	2.0 0.25	8.0 1.25	k W
Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h re	- -	8.0 4.0	X 10 - 4
Small - Signal Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h fe	50 75	300 375	-
Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)	h oe	5.0 25	35 200	m Mhos
Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz)	rb ′ C c	-	150	ps
Noise Figure (I C = 100 m Adc, V CE = 10 Vdc, R S = 1.0 k W , f = 1.0 kHz)	N F	-	4.0	dB

Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
f T is defined as the frequency at which |h fe | extrapolates to unity.

2N2222 Absolute Maximum Ratings

Characteristic	Symbol	Value	Unit
Collector - Emitter Voltage	V CEO	40	Vdc
Collector - Base Voltage	V CBO	75	Vdc
Emitter - Base Voltage	V EBO	6.0	Vdc
Collector Current - Continuous	I C	600	mAdc
Total Device Dissipation@T A = 25 ° C Derate above 25 ° C	P D	625 5.0	mW mW/ ° C
Total Device Dissipation@T C = 25 ° C Derate above 25 ° C	P D	1.5 12	W mW/ ° C
Operating and Storage Junction Temperature Range	T J , T stg	- 55 to +150	° C

2N2222 Thermal Information

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Ambient	R q JA	200	° C/W
Thermal Resistance, Junction to Case	R q JC	83.3	° C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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