2N2222
Amplifier Transistors
Manufacturer
unknown
Overview
Part: ON Semiconductor P2N2222AG, P2N2222ARL1G
Type: NPN Silicon Amplifier Transistor
Key Specs:
- Collector - Emitter Voltage: 40 Vdc
- Collector Current – Continuous: 600 mAdc
- Total Device Dissipation @ TA = 25°C: 625 mW
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Collector – Emitter Breakdown Voltage: 40 Vdc
Features:
- Pb-Free Devices
Applications:
- null
Package:
- TO-92 (Pb-Free)
Electrical Characteristics
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| OFF CHARACTERISTICS | • | • | • | • |
| Collector – Emitter Breakdown Voltage $(I_C = 10 \text{ mAdc}, I_B = 0)$ | V (BR)CEO | 40 | _ | Vdc |
| Collector – Base Breakdown Voltage ( $I_C = 10 \mu Adc$ , $I_E = 0$ ) | V (BR)CBO | 75 | _ | Vdc |
| Emitter – Base Breakdown Voltage ( $I_E = 10 \mu Adc, I_C = 0$ ) | V (BR)EBO | 6.0 | _ | Vdc |
| Collector Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) | I CEX | _ | 10 | nAdc |
| Collector Cutoff Current $(V_{CB} = 60 \text{ Vdc}, I_E = 0)$ $(V_{CB} = 60 \text{ Vdc}, I_E = 0, T_A = 150^{\circ}\text{C})$ | Іcвo | - - | 0.01 10 | μAdc |
| Emitter Cutoff Current $(V_{EB} = 3.0 \text{ Vdc}, I_{C} = 0)$ | I EBO | _ | 10 | nAdc |
| Collector Cutoff Current (V CE = 10 V) | I CEO | _ | 10 | nAdc |
| Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) | I BEX | _ | 20 | nAdc |
| ON CHARACTERISTICS | ||||
| DC Current Gain | h FE | 35 50 75 35 100 50 40 | - - - - 300 - | - |
| Collector – Emitter Saturation Voltage (Note 1) $ \begin{pmatrix} I_C = 150 \text{ mAdc}, I_B = 15 \text{ mAdc} \ I_C = 500 \text{ mAdc}, I_B = 50 \text{ mAdc} \end{pmatrix} $ | V CE(sat) | - - | 0.3 1.0 | Vdc |
| Base – Emitter Saturation Voltage (Note 1) ( $I_C$ = 150 mAdc, $I_B$ = 15 mAdc) ( $I_C$ = 500 mAdc, $I_B$ = 50 mAdc) | V BE(sat) | 0.6 | 1.2 2.0 | Vdc |
| SMALL-SIGNAL CHARACTERISTICS | ||||
| Current – Gain – Bandwidth Product (Note 2) (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)C | f T | 300 | _ | MHz |
| Output Capacitance ( $V_{CB} = 10 \text{ Vdc}, I_E = 0, f = 1.0 \text{ MHz}$ ) | C obo | _ | 8.0 | pF |
| Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) | C ibo | - | 25 | pF |
| Input Impedance $ \begin{array}{l} \text{(I}{C}=1.0 \text{ mAdc, V}{CE}=10 \text{ Vdc, f}=1.0 \text{ kHz)} \ \text{(I}{C}=10 \text{ mAdc, V}{CE}=10 \text{ Vdc, f}=1.0 \text{ kHz)} \end{array} $ | h ie | 2.0 0.25 | 8.0 1.25 | kΩ |
| Voltage Feedback Ratio $ \begin{array}{l} (I_C=1.0 \text{ mAdc, V}{CE}=10 \text{ Vdc, f}=1.0 \text{ kHz}) \ (I_C=10 \text{ mAdc, V}{CE}=10 \text{ Vdc, f}=1.0 \text{ kHz}) \end{array} $ | h re | - - | 8.0 4.0 | X 10 -4 |
| $\begin{aligned} &\text{Small-Signal Current Gain} \ &\text{(I}{C} = 1.0 \text{ mAdc, V}{CE} = 10 \text{ Vdc, f} = 1.0 \text{ kHz)} \ &\text{(I}{C} = 10 \text{ mAdc, V}{CE} = 10 \text{ Vdc, f} = 1.0 \text{ kHz)} \end{aligned}$ | h fe | 50 75 | 300 375 | _ |
| Output Admittance $ \begin{array}{l} \text{(I}{C}=1.0 \text{ mAdc, V}{CE}=10 \text{ Vdc, f}=1.0 \text{ kHz)} \ \text{(I}{C}=10 \text{ mAdc, V}{CE}=10 \text{ Vdc, f}=1.0 \text{ kHz)} \end{array} $ | h oe | 5.0 25 | 35 200 | μMhos |
| Collector Base Time Constant (I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) | rb′C c | - | 150 | ps |
| Noise Figure (I C = 100 $\mu$ Adc, V CE = 10 Vdc, R S = 1.0 k $\Omega$ , f = 1.0 kHz) 1. Pulse Test: Pulse Width < 300 $\mu$ S. Duty Cycle < 2.0% | N F | _ | 4.0 | dB |
1. Pulse Test: Pulse Width $\leq$ 300 $\mu$ s, Duty Cycle $\leq$ 2.0%. 2. fT is defined as the frequency at which $|h_{fe}|$ extrapolates to unity.
Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector - Emitter Voltage | V CEO | 40 | Vdc |
| Collector - Base Voltage | V CBO | 75 | Vdc |
| Emitter – Base Voltage | V EBO | 6.0 | Vdc |
| Collector Current – Continuous | I C | 600 | mAdc |
| Total Device Dissipation @ T A = 25°C Derate above 25°C | P D | 625 5.0 | mW mW/°C |
| Total Device Dissipation @ T C = 25°C Derate above 25°C | P D | 1.5 12 | W mW/°C |
| Operating and Storage Junction Temperature Range | T J , T stg | -55 to +150 | °C |
THERMAL CHARACTERISTICS
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Junction to Ambient | $R_{\theta JA}$ | 200 | °C/W |
| Thermal Resistance, Junction to Case | $R_{\theta JC}$ | 83.3 | °C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Junction to Ambient | $R_{\theta JA}$ | 200 | °C/W |
| Thermal Resistance, Junction to Case | $R_{\theta JC}$ | 83.3 | °C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Get structured datasheet data via API
Get started free