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BC847BW

NPN General-Purpose Transistor

The BC847BW is a npn general-purpose transistor from onsemi. View the full BC847BW datasheet below including key specifications.

BC847BW shares its datasheet with BC847, whose page lists every part number it covers.

Official BC847BW datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

SOT323

BC847BW Key Specifications

ParameterValue
Collector-base cut-off current (ICBO)15 nA (V_CB = 30 V; I_E = 0 A)
Emitter-base cut-off current (IEBO)100 nA (V_EB = 5 V; I_C = 0 A)
DC current gain (hFE group B)200 to 450 (V_CE = 5 V; I_C = 2 mA)
Collector-emitter saturation voltage (V_CEsat)90 mV (typ, I_C = 10 mA; I_B = 0.5 mA)
Base-emitter saturation voltage (V_BEsat)700 mV (typ, I_C = 10 mA; I_B = 0.5 mA)
Transition frequency (fT)100 MHz (min, V_CE = 5 V; I_C = 10 mA; f = 100 MHz)
Collector capacitance (Cc)1.5 pF (max, V_CB = 10 V; I_E = i_e = 0 A; f = 1 MHz)
Noise figure (NF)2 dB (typ, I_C = 200 μA; V_CE = 5 V; R_S = 2 kΩ; f = 1 kHz; B = 200 Hz)

BC847BW Overview

Part: BC847 series — Nexperia

Type: NPN General-Purpose Transistor

Description: 45 V, 100 mA NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages, offering three different gain selections.

Operating Conditions:

  • Collector-emitter voltage: up to 45 V
  • Operating temperature: -65 to +150 °C
  • DC current gain (hFE): 110 to 800 (at VCE = 5 V; IC = 2 mA)

Absolute Maximum Ratings:

  • Max collector-base voltage: 50 V
  • Max collector-emitter voltage: 45 V
  • Max emitter-base voltage: 6 V
  • Max continuous collector current: 100 mA
  • Max junction temperature: 150 °C
  • Max storage temperature: -65 to +150 °C

Key Specs:

  • Collector-base cut-off current (ICBO): 15 nA (V_CB = 30 V; I_E = 0 A)
  • Emitter-base cut-off current (IEBO): 100 nA (V_EB = 5 V; I_C = 0 A)
  • DC current gain (hFE group B): 200 to 450 (V_CE = 5 V; I_C = 2 mA)
  • Collector-emitter saturation voltage (V_CEsat): 90 mV (typ, I_C = 10 mA; I_B = 0.5 mA)
  • Base-emitter saturation voltage (V_BEsat): 700 mV (typ, I_C = 10 mA; I_B = 0.5 mA)
  • Transition frequency (fT): 100 MHz (min, V_CE = 5 V; I_C = 10 mA; f = 100 MHz)
  • Collector capacitance (Cc): 1.5 pF (max, V_CB = 10 V; I_E = i_e = 0 A; f = 1 MHz)
  • Noise figure (NF): 2 dB (typ, I_C = 200 μA; V_CE = 5 V; R_S = 2 kΩ; f = 1 kHz; B = 200 Hz)

Features:

  • General-purpose transistors
  • SMD plastic packages
  • Three different gain selections
  • AEC-Q101 qualified

Applications:

  • General-purpose switching and amplification

Package:

  • SOT23 (TO-236AB)
  • SOT323 (SC-70)
  • SOT416 (SC-75)
  • SOT883 (SC-101)

BC847BW Features

  • General-purpose transistors
  • SMD plastic packages
  • Three different gain selections
  • AEC-Q101 qualified

BC847BW Applications

  • General-purpose switching and amplification

Product data sheet

BC847BW Thermal Information

Table 7. Thermal characteristics

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambientin free air[1]
SOT23--500K/W
SOT323--625K/W
SOT416--833K/W
SOT883[2]--500K/W

[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.

45 V, 100 mA NPN general-purpose transistors

BC847BW Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BC847onsemiSOT23
BC847AonsemiSOT23
BC847AMonsemiSOT883
BC847ATonsemiSOT416
BC847AWonsemiSOT323
BC847BonsemiSOT-23
BC847BMonsemiSOT883
BC847BTonsemiSOT416
BC847ConsemiSOT-23
BC847CMonsemiSOT883
BC847CTonsemiSOT416
BC847CWonsemiSOT323
BC847TonsemiSOT416
BC847WonsemiSOT323

Other BJTs

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  • BC847 – onsemi, NPN General-Purpose Transistor
  • 2N2219A – onsemi, NPN High Speed Switching Transistor
  • 2N2222 – onsemi, NPN Silicon Amplifier Transistor
  • 2N2222A – onsemi, NPN High Speed Switching Transistor
  • 2N3906 – onsemi, PNP Silicon General Purpose Transistor
  • 2N4921G – onsemi, NPN Medium-Power Silicon Transistor
  • 2N4922G – onsemi, Medium-Power NPN Silicon Transistor

All BJTs datasheetsAll onsemi datasheets (338)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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