BC327BU

PNP Epitaxial Silicon Transistor

The BC327BU is a pnp epitaxial silicon transistor from onsemi. View the full BC327BU datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

BC327BU shares its datasheet with BC327, whose page lists every part number it covers.

Official BC327BU datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

BC327BU Key Specifications

Parameter	Value
Polarity	PNP
Storage Temperature	-55°C to +150°C
DC Current Gain (HFE1)	100 to 630 (VCE=-1V, IC=-100mA)
DC Current Gain (HFE2)	60 min (VCE=-1V, IC=-300mA)
Power Dissipation (PD)	625mW
Output Capacitance (Cob)	12pF typ
Junction Temperature (TJ)	150°C
Collector Current (IC, DC)	-800mA
Emitter-Base Voltage (VEBO)	-5V
Collector Cut-Off Current (ICES)	-100nA max
Collector-Emitter Voltage (VCEO)	-45V
Collector-Emitter Voltage (VCES)	-50V
Base-Emitter On Voltage (VBE(On))	-1.2V max (VCE=-1V, IC=-300mA)
Current Gain Bandwidth Product (FT)	100MHz typ
Thermal Resistance Junction-Ambient (RthJA)	200°C/W
Collector-Emitter Saturation Voltage (VCE(Sat))	-0.7V max (IC=-500mA, IB=-50mA)

BC327BU Overview

Part: BC327 — onsemi

Type: PNP Epitaxial Silicon Transistor

Description: A PNP epitaxial silicon transistor designed for switching and amplifier applications, suitable for AF-driver stages and low-power output stages, featuring a collector-emitter voltage of -45 V and a collector current of -800 mA.

Operating Conditions:

Collector-Emitter breakdown voltage: -45 V (min, I_C = -10 mA, I_B = 0)
Emitter-Base breakdown voltage: -5 V (min, I_E = -10 mA, I_C = 0)

Absolute Maximum Ratings:

Max Collector-Emitter Voltage (V_CES): -50 V
Max Collector-Emitter Voltage (V_CEO): -45 V
Max Emitter-Base Voltage (V_EBO): -5 V
Max Collector Current (DC): -800 mA
Max Junction Temperature (T_J): 150 °C
Max Storage Temperature (T_STG): -55 to +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (BV_CEO): -45 V (min, I_C = -10 mA, I_B = 0)
Collector Cut-Off Current (I_CES): -100 nA (max, V_CE = -45 V, I_B = 0)
DC Current Gain (h_FE1): 100 to 630 (V_CE = -1 V, I_C = -100 mA)
Collector-Emitter Saturation Voltage (V_CE(sat)): -0.7 V (max, I_C = -500 mA, I_B = -50 mA)
Base-Emitter On Voltage (V_BE(on)): -1.2 V (max, V_CE = -1 V, I_C = -300 mA)
Current Gain Bandwidth Product (f_T): 100 MHz (typ, V_CE = -5 V, I_C = -10 mA, f = 20 MHz)
Output Capacitance (C_ob): 12 pF (typ, V_CB = -10 V, I_E = 0, f = 1 MHz)
Power Dissipation (P_D): 625 mW (Derate Above 25 °C: 5.0 mW/°C)

Features:

Switching and Amplifier Applications
Suitable for AF-Driver Stages and Low-Power Output Stages
Complement to BC337/BC338
Pb-Free Devices

Applications:

AF-Driver Stages
Low-Power Output Stages

Package:

TO-92 3 (Pb-Free)
TO-92 3 LF (Pb-Free)

BC327BU Features

Switching and Amplifier Applications
Suitable for AF -Driver Stages and Low -Power Output Stages
Complement to BC337/BC338
These are Pb -Free Devices

BC327BU Electrical Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
BV CEO	Collector - Emitter Breakdown Voltage	I C = - 10 mA, I B = 0	- 45	-	-	V
BV CES	Collector - Emitter Breakdown Voltage	I C = - 0.1 mA, V BE = 0	- 50	-	-	V
BV EBO	Emitter - Base Breakdown Voltage	I E = - 10 m A, I C = 0	- 5	-	-	V
I CES	Collector Cut - Off Current	V CE = - 45 V, I B = 0	-	- 2	- 100	nA
h FE1	DC Current Gain	V CE = - 1 V, I C = - 100 mA	100	-	630
h FE2		V CE = - 1 V, I C = - 300 mA	60	-
V CE (sat)	Collector - Emitter Saturation Voltage	I C = - 500 mA, I B = - 50 mA	-	-	- 0.7	V
V BE (on)	Base - Emitter On Voltage	V CE = - 1 V, I C = - 300 mA	-	-	- 1.2	V
f T	Current Gain Bandwidth Product	V CE = - 5 V, I C = - 10 mA, f = 20 MHz	-	100	-	MHz
C ob	Output Capacitance	V CB = - 10 V, I E = 0, f = 1 MHz	-	12	-	pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

BC327BU Absolute Maximum Ratings

(T A = 25 C unless otherwise noted.)

Symbol	Parameter	Value	Unit
V CES	Collector - Emitter Voltage	- 50	V
V CEO	Collector - Emitter Voltage	- 45	V
V EBO	Emitter - Base Voltage	- 5	V
I C	Collector Current (DC)	- 800	mA
T J	Junction Temperature	150	C
T STG	Storage Temperature	- 55 to +150	C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

BC327BU Thermal Information

(T A = 25 C unless otherwise noted.) (Note 1)

Symbol	Characteristic	Value	Unit
P D	Power Dissipation Derate Above 25 C	625 5.0	mW mW/ C
R q JA	Thermal Resistance, Junction to Ambient	200	C/W

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
BC327	onsemi	TO-92-3
BC32725BU	onsemi	TO-92-3
BC32725TA	onsemi	—
BC32740BU	onsemi	TO-92-3

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All BJTs datasheets All onsemi datasheets (337)

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