BC32725TA

Part: BC327 — onsemi

Type: PNP Epitaxial Silicon Transistor

Description: A PNP epitaxial silicon transistor designed for switching and amplifier applications, suitable for AF-driver stages and low-power output stages, featuring a collector-emitter voltage of -45 V and a collector current of -800 mA.

Operating Conditions:

• Collector-Emitter breakdown voltage: -45 V (min, I_C = -10 mA, I_B = 0)
• Emitter-Base breakdown voltage: -5 V (min, I_E = -10 mA, I_C = 0)

Absolute Maximum Ratings:

• Max Collector-Emitter Voltage (V_CES): -50 V
• Max Collector-Emitter Voltage (V_CEO): -45 V
• Max Emitter-Base Voltage (V_EBO): -5 V
• Max Collector Current (DC): -800 mA
• Max Junction Temperature (T_J): 150 °C
• Max Storage Temperature (T_STG): -55 to +150 °C

Key Specs:

• Collector-Emitter Breakdown Voltage (BV_CEO): -45 V (min, I_C = -10 mA, I_B = 0)
• Collector Cut-Off Current (I_CES): -100 nA (max, V_CE = -45 V, I_B = 0)
• DC Current Gain (h_FE1): 100 to 630 (V_CE = -1 V, I_C = -100 mA)
• Collector-Emitter Saturation Voltage (V_CE(sat)): -0.7 V (max, I_C = -500 mA, I_B = -50 mA)
• Base-Emitter On Voltage (V_BE(on)): -1.2 V (max, V_CE = -1 V, I_C = -300 mA)
• Current Gain Bandwidth Product (f_T): 100 MHz (typ, V_CE = -5 V, I_C = -10 mA, f = 20 MHz)
• Output Capacitance (C_ob): 12 pF (typ, V_CB = -10 V, I_E = 0, f = 1 MHz)
• Power Dissipation (P_D): 625 mW (Derate Above 25 °C: 5.0 mW/°C)

Features:

• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC337/BC338
• Pb-Free Devices

Applications:

• AF-Driver Stages
• Low-Power Output Stages

Package:

• TO-92 3 (Pb-Free)
• TO-92 3 LF (Pb-Free)

• Switching and Amplifier Applications
• Suitable for AF -Driver Stages and Low -Power Output Stages
• Complement to BC337/BC338
• These are Pb -Free Devices

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(T A = 25 C unless otherwise noted.)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(T A = 25 C unless otherwise noted.) (Note 1)