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BC546BG

NPN Silicon Amplifier Transistor

The BC546BG is a npn silicon amplifier transistor from onsemi. View the full BC546BG datasheet below including key specifications, electrical characteristics.

Official BC546BG datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

TO-92

BC546BG Key Specifications

ParameterValue
PolarityNPN
Packaging5000 Units / Bulk
Noise Figure (NF)2.0 dB typ, 10 dB max
Package DimensionsTO-92 (TO-226) case 29-11, body 4.45-5.20 mm x 4.32-5.33 mm
Output Capacitance (Cobo)1.7 pF typ, 4.5 pF max
Current-Gain-Bandwidth Product (FT)150 MHz min, 300 MHz typ
Collector Cutoff Current (ICES, VCE=70 V)0.2 nA typ, 15 nA max
Emitter-Base Breakdown Voltage (V(BR)EBO)6.0 V min
Collector-Base Breakdown Voltage (V(BR)CBO)80 V min (BC546)
Collector-Emitter Breakdown Voltage (V(BR)CEO)65 V min (BC546)
DC Current Gain (HFE, B Group, IC=2 MA, VCE=5 V)200 to 450 (290 typ)
Base-Emitter On Voltage (VBE(On), IC=2 MA, VCE=5 V)0.55 V to 0.7 V
Collector-Emitter Saturation Voltage (VCE(Sat), IC=100 MA, IB=5 MA)0.2 V typ, 0.6 V max
Collector-Emitter Saturation Voltage (VCE(Sat), IC=10 MA, IB=0.5 MA)0.09 V typ, 0.25 V max

BC546BG Overview

Part: BC546B, BC547A, B, C, BC548B, C — onsemi

Type: NPN Bipolar Junction Transistor (BJT)

Description: NPN silicon amplifier transistors offering various collector-emitter breakdown voltages from 30 V to 65 V and DC current gains up to 800.

Operating Conditions:

  • Operating temperature: Electrical characteristics specified at T A = 25 °C (some max values at T A = 125 °C)

Key Specs:

  • Collector-Emitter Breakdown Voltage (BC546): 65 V (min, I C = 1.0 mA, I B = 0)
  • Collector-Emitter Breakdown Voltage (BC547): 45 V (min, I C = 1.0 mA, I B = 0)
  • Collector-Emitter Breakdown Voltage (BC548): 30 V (min, I C = 1.0 mA, I B = 0)
  • DC Current Gain (BC547B, BC546B/547B/548B): 200 (min, I C = 2.0 mA, V CE = 5.0 V)
  • Collector-Emitter Saturation Voltage: 0.25 V (max, I C = 10 mA, I B = 0.5 mA)
  • Base-Emitter Saturation Voltage: 0.7 V (typ, I C = 10 mA, I B = 0.5 mA)
  • Current-Gain-Bandwidth Product (BC546/547/548): 150 MHz (min, I C = 10 mA, V CE = 5.0 V, f = 100 MHz)
  • Output Capacitance: 1.7 pF (typ, V CB = 10 V, I C = 0, f = 1.0 MHz)

Features:

  • Pb-Free Packages are Available

Package:

  • TO-92 (TO-226)

BC546BG Features

  • Pb -Free Packages are Available*

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

*For additional information on our Pb -Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

BC546BG Electrical Characteristics

CharacteristicSymbolMinTypMaxUnit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (I C = 1.0 mA, I B = 0)BC546 BC547 BC548 V (BR)CEO65 45 30- - -- - -V
Collector - Base Breakdown Voltage (I C = 100 m Adc)BC546 BC547 BC548 V (BR)CBO80 50 30- - -- - -V
Emitter - Base Breakdown Voltage (I E = 10 m A, I C = 0)BC546 BC547 BC548 V (BR)EBO6.0 6.0 6.0- - -- - -V
Collector Cutoff Current (V CE = 70 V, V BE = 0) (V CE = 50 V, V BE = 0) (V CE = 35 V, V BE = 0) (V CE = 30 V, T A = 125 ° C)BC546 BC547 BC548 BC546/547/548 I CES- - - -0.2 0.2 0.2 -15 15 15 4.0nA m A
ON CHARACTERISTICS
DC Current Gain (I C = 10 m A, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) (I C = 100 mA, V CE = 5.0 V)BC547A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C h FE- - - 110 110 110 110 200 420 - - -90 150 270 - - - 180 290 520 120 180 300- - - 450 800 800 220 450 800 - - --
Collector - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) (I C = 100 mA, I B = 5.0 mA) (I C = 10 mA, I B = See Note 1)V CE(sat)- - -0.09 0.2 0.30.25 0.6 0.6V
Base - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)V BE(sat)-0.7-V
Base - Emitter On Voltage (I C = 2.0 mA, V CE = 5.0 V)V BE(on)0.55- -0.7 0.77V
(I C = 10 mA, V CE = 5.0 V)-300 300-
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (I C = 10 mA, V CE = 5.0 V, f = 100 MHz)BC546 BC547 BC548 f T150 150 150300- -MHz
Output Capacitance (V CB = 10 V, I C = 0, f = 1.0 MHz)C obo-1.74.5pF
Input Capacitance (V EB = 0.5 V, I C = 0, f = 1.0 MHz)C ibo-10-pF
Small - Signal Current Gain (I C = 2.0 mA, V CE = 5.0 V, f = 1.0 kHz) BC546 BC547/548 BC547ABC546B/547B/548B BC547C/548C h fe125 125 125 240 450- - 220 330 600500 900 260 500 900-
Noise Figure (I C = 0.2 mA, V CE = 5.0 V, R S = 2 k W , f = 1.0 kHz, D f = 200 Hz) BC546 BC547BC548 NF- - -2.0 2.0 2.010 10 10dB

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BC546onsemiTO-92
BC546BonsemiTO-92
BC547onsemiTO-92
BC548onsemiTO-92

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All BJTs datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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