BC547
NPN Epitaxial Silicon Transistor
Manufacturer
unknown
Overview
Part: BC546 / BC547 / BC548 / BC549 / BC550
Type: NPN Epitaxial Silicon Transistor
Key Specs:
- Collector-Emitter Voltage (BC546): 65 V
- Collector Current (DC): 100 mA
- Collector Power Dissipation: 500 mW
- DC Current Gain (Min): 110
- Current Gain Bandwidth Product (Typ): 300 MHz
Features:
- Switching and Amplifier
- High-Voltage: BC546, VCEO = 65 V
- Low-Noise: BC549, BC550
- Complement to BC556, BC557, BC558, BC559, and BC560
- Pb-Free Devices
Applications:
- null
Package:
- No dimensions provided
Features
Switching and Amplifier
High-Voltage: BC546, VCEO = 65 V
Low-Noise: BC549, BC550
Complement to BC556, BC557, BC558, BC559, and BC560
These are Pb-Free Devices
Electrical Characteristics
| Symbol | Parameter | Test Condition | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| I CBO | Collector Cut-of | f Current | V CB = 30 V, I E = 0 | 15 | nA | ||
| h FE | DC Current Gai | n | V CE = 5 V, I C = 2 mA | 110 | 800 | ||
| V CE (sat) | Collector-Emitter Saturation Voltage | I C = 10 mA, I B = 0.5 mA | 90 | 250 | mV | ||
| I C = 100 mA, I B = 5 mA | 250 | 600 | 1 | ||||
| V BE (sat) | sat) Base-Emitter Saturation Voltage | I C = 10 mA, I B = 0.5 mA | 700 | mV | |||
| I C = 100 mA, I B = 5 mA | 900 | ||||||
| V BE (on) | V BE (on) Base-Emitter On Voltage | V CE = 5 V, I C = 2 mA | 580 | 660 | 700 | mV | |
| V CE = 5 V, I C = 10 mA | 720 | ||||||
| f T | Current Gain Bandwidth Product | V CE = 5 V, I C = 10 mA, f = 100 MHz | 300 | MHz | |||
| C ob | Output Capacitance | V CB = 10 V, I E = 0, f = 1 MHz | 3.5 | 6.0 | pF | ||
| C ib | Input Capacitance | V EB = 0.5 V, I C = 0, f = 1 MHz | 9 | pF | |||
| NF | Noise Figure | BC546 / BC547 / BC548 | $V_{CE} = 5 \text{ V, } I_{C} = 200 \ \mu\text{A,}$ $f = 1 \ \text{kHz, } R_{G} = 2 \ \text{k}\Omega$ $V_{CE} = 5 \ \text{V, } I_{C} = 200 \ \mu\text{A,}$ $R_{G} = 2 \ \text{k}\Omega, f = 30 \ \text{to } 15000 \ \text{MHz}$ | 2.0 | 10.0 | dB | |
| BC549 / BC550 | 1.2 | 4.0 | |||||
| BC549 | 1.4 | 4.0 | 7 | ||||
| BC550 | 1.4 | 3.0 | |||||
| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage BC546 BC547 / BC550 BC548 / BC549 | VCBO | 80 50 30 | V |
| Collector-Emitter Voltage BC546 BC547 / BC550 BC548 / BC549 | VCEO | 65 45 30 | V |
| Emitter-Base Voltage BC546 / BC547 BC548 / BC549 / BC550 | VEBO | 6 5 | V |
| Collector Current (DC) | IC | 100 | mA |
| Collector Power Dissipation | PC | 500 | mW |
| Junction Temperature | TJ | 150 | C |
| Storage Temperature Range | TSTG | −65 to +150 | C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- Collector 2. Base 3. Emitter
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