BC547

NPN Epitaxial Silicon Transistor

The BC547 is a npn epitaxial silicon transistor from onsemi. View the full BC547 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

onsemi

Overview

Part: BC546 / BC547 / BC548 / BC549 / BC550 from onsemi

Type: NPN Epitaxial Silicon Transistor

Description: NPN epitaxial silicon transistor family for switching and amplifier applications, featuring collector-emitter voltages up to 65 V and collector current up to 100 mA, with low-noise variants available.

Operating Conditions:

Supply voltage: 30–65 V (Collector-Emitter Voltage range)
Operating temperature: -65 to +150 °C
Max Collector Current: 100 mA

Absolute Maximum Ratings:

Max supply voltage: 80 V (Collector-Base Voltage for BC546)
Max continuous current: 100 mA
Max junction/storage temperature: 150 °C

Key Specs:

Collector Cut-off Current (ICBO): Max 15 nA (V_CB = 30 V, I_E = 0)
DC Current Gain (hFE): Min 110, Max 800 (V_CE = 5 V, I_C = 2 mA)
Collector-Emitter Saturation Voltage (VCE(sat)): Typ 90 mV, Max 250 mV (I_C = 10 mA, I_B = 0.5 mA)
Base-Emitter On Voltage (VBE(on)): Typ 660 mV, Max 700 mV (V_CE = 5 V, I_C = 2 mA)
Current Gain Bandwidth Product (fT): Typ 300 MHz (V_CE = 5 V, I_C = 10 mA, f = 100 MHz)
Output Capacitance (Cob): Typ 3.5 pF, Max 6 pF (V_CB = 10 V, I_E = 0, f = 1 MHz)
Noise Figure (NF) for BC549/BC550: Typ 1.2 dB, Max 4 dB (V_CE = 5 V, I_C = 200 mA, f = 1 kHz, R_G = 2 kΩ)

Features:

Switching and Amplifier
High-Voltage: BC546, VCEO = 65 V
Low-Noise: BC549, BC550
Complement to BC556, BC557, BC558, BC559, and BC560
Pb-Free Devices

Applications:

Switching
Amplifier

Package:

TO-92-3

Features

Switching and Amplifier
High-Voltage: BC546, VCEO = 65 V
Low-Noise: BC549, BC550
Complement to BC556, BC557, BC558, BC559, and BC560
These are Pb-Free Devices

Electrical Characteristics

Symbol	Parameter	Parameter	Test Condition	Min	Typ	Max	Unit
I CBO	Collector Cut-off Current	Collector Cut-off Current	V CB = 30 V, I E = 0			15	nA
h FE	DC Current Gain	DC Current Gain	V CE = 5 V, I C = 2 mA	110		800
V CE (sat)	Collector-Emitter Saturation Voltage	Collector-Emitter Saturation Voltage	I C = 10 mA, I B = 0.5 mA		90	250	mV
V CE (sat)			I C = 100 mA, I B = 5 mA		250	600
V BE (sat)	Base-Emitter Saturation Voltage	Base-Emitter Saturation Voltage	I C = 10 mA, I B = 0.5 mA		700		mV
V BE (sat)			I C = 100 mA, I B = 5 mA		900
V BE (on)	Base-Emitter On Voltage	Base-Emitter On Voltage	V CE = 5 V, I C = 2 mA	580	660	700	mV
V BE (on)			V CE = 5 V, I C = 10 mA			720
f T	Current Gain Bandwidth Product	Current Gain Bandwidth Product	V CE = 5 V, I C = 10 mA, f = 100 MHz		300		MHz
C ob	Output Capacitance	Output Capacitance	V CB = 10 V, I E = 0, f = 1 MHz		3.5	6	pF
C ib	Input Capacitance	Input Capacitance	V EB = 0.5 V, I C = 0, f = 1 MHz		9		pF
NF	Noise Figure	BC546 / BC547 / BC548	V CE = 5 V, I C = 200 m A, f = 1 kHz, R G = 2 k W		2	10	dB
NF		BC549 / BC550	V CE = 5 V, I C = 200 m A, f = 1 kHz, R G = 2 k W		1.2	4
NF		BC549	V CE = 5 V, I C = 200 m A, R G = 2 k W , f = 30 to 15000 MHz		1.4	4
NF		BC550	V CE = 5 V, I C = 200 m A, R G = 2 k W , f = 30 to 15000 MHz		1.4	3

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage BC546 BC547 / BC550 BC548 / BC549	V CBO	80 50 30	V
Collector-Emitter Voltage BC546 BC547 / BC550 BC548 / BC549	V CEO	65 45 30	V
Emitter-Base Voltage BC546 / BC547 BC548 / BC549 / BC550	V EBO	6 5	V
Collector Current (DC)	I C	100	mA
Collector Power Dissipation	P C	500	mW
Junction Temperature	T J	150	C
Storage Temperature Range	T STG	- 65 to +150	C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Collector 2. Base 3. Emitter

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