BC546
NPN Silicon Amplifier TransistorThe BC546 is a npn silicon amplifier transistor from onsemi. View the full BC546 datasheet below including key specifications, electrical characteristics.
Official BC546 datasheet (PDF) — the source this page was extracted from.
BC546 Key Specifications
| Parameter | Value |
|---|---|
| Polarity | NPN |
| Noise Figure (NF) | 2.0 dB typ, 10 dB max |
| Input Capacitance (Cibo) | 10 pF typ |
| Output Capacitance (Cobo) | 1.7 pF typ, 4.5 pF max |
| Collector Cutoff Current (ICES) | 0.2 nA typ, 15 nA max (VCE=70 V) |
| Base-Emitter On Voltage (VBE(On)) | 0.55 V to 0.7 V at IC=2 mA, VCE=5 V |
| Current-Gain Bandwidth Product (FT) | 150 MHz min, 300 MHz typ |
| Emitter-Base Breakdown Voltage (VEBO) | 6.0 V min |
| Collector-Base Breakdown Voltage (VCBO) | 80 V min |
| DC Current Gain (HFE) At IC=2 MA, VCE=5 V | 110 to 450 (BC546B: 200 to 450) |
| Collector-Emitter Breakdown Voltage (VCEO) | 65 V min |
| Collector-Emitter Saturation Voltage (VCE(Sat)) | 0.09 V typ, 0.25 V max at IC=10 mA, IB=0.5 mA |
BC546 Overview
Part: BC546B, BC547A/B/C, BC548B/C — onsemi
Type: NPN Silicon Amplifier Transistors
Description: NPN silicon bipolar amplifier transistors in a TO-92 package with collector-emitter breakdown voltages ranging from 30 V to 65 V and a transition frequency of up to 300 MHz.
Key Specs:
- Collector-emitter breakdown voltage V(BR)CEO (IC = 1.0 mA, IB = 0): 65 V min (BC546), 45 V min (BC547), 30 V min (BC548)
- Collector-base breakdown voltage V(BR)CBO (IC = 100 μAdc): 80 V min (BC546), 50 V min (BC547), 30 V min (BC548)
- Emitter-base breakdown voltage V(BR)EBO (IE = 10 μA, IC = 0): 6.0 V min
- Collector cutoff current ICES (VCE = 30 V, TA = 125 °C): 4.0 μA max
- DC current gain hFE (IC = 2.0 mA, VCE = 5.0 V): 110–220 (BC547A), 200–450 (BC546B/547B/548B), 420–800 (BC547C/BC548C)
- Collector-emitter saturation voltage VCE(sat) (IC = 10 mA, IB = 0.5 mA): 0.09 V typ, 0.25 V max
- Current-gain–bandwidth product fT (IC = 10 mA, VCE = 5.0 V, f = 100 MHz): 150 MHz min, 300 MHz typ
- Output capacitance Cobo (VCB = 10 V, IC = 0, f = 1.0 MHz): 1.7 pF typ, 4.5 pF max
- Noise figure NF (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kΩ, f = 1.0 kHz, Δf = 200 Hz): 2.0 dB typ, 10 dB max
Features:
- Pb-Free packages available
Applications:
- General-purpose amplification
Package:
- TO-92 (TO-226)
BC546 Features
- Pb -Free Packages are Available*
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
*For additional information on our Pb -Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
BC546 Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||
| Collector - Emitter Breakdown Voltage (I C = 1.0 mA, I B = 0) | BC546 BC547 BC548 V (BR)CEO | 65 45 30 | - - - | - - - | V |
| Collector - Base Breakdown Voltage (I C = 100 m Adc) | BC546 BC547 BC548 V (BR)CBO | 80 50 30 | - - - | - - - | V |
| Emitter - Base Breakdown Voltage (I E = 10 m A, I C = 0) | BC546 BC547 BC548 V (BR)EBO | 6.0 6.0 6.0 | - - - | - - - | V |
| Collector Cutoff Current (V CE = 70 V, V BE = 0) (V CE = 50 V, V BE = 0) (V CE = 35 V, V BE = 0) (V CE = 30 V, T A = 125 ° C) | BC546 BC547 BC548 BC546/547/548 I CES | - - - - | 0.2 0.2 0.2 - | 15 15 15 4.0 | nA m A |
| ON CHARACTERISTICS | |||||
| DC Current Gain (I C = 10 m A, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) (I C = 100 mA, V CE = 5.0 V) | BC547A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C h FE | - - - 110 110 110 110 200 420 - - - | 90 150 270 - - - 180 290 520 120 180 300 | - - - 450 800 800 220 450 800 - - - | - |
| Collector - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) (I C = 100 mA, I B = 5.0 mA) (I C = 10 mA, I B = See Note 1) | V CE(sat) | - - - | 0.09 0.2 0.3 | 0.25 0.6 0.6 | V |
| Base - Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) | V BE(sat) | - | 0.7 | - | V |
| Base - Emitter On Voltage (I C = 2.0 mA, V CE = 5.0 V) | V BE(on) | 0.55 | - - | 0.7 0.77 | V |
| (I C = 10 mA, V CE = 5.0 V) | - | 300 300 | - | ||
| SMALL - SIGNAL CHARACTERISTICS | |||||
| Current - Gain - Bandwidth Product (I C = 10 mA, V CE = 5.0 V, f = 100 MHz) | BC546 BC547 BC548 f T | 150 150 150 | 300 | - - | MHz |
| Output Capacitance (V CB = 10 V, I C = 0, f = 1.0 MHz) | C obo | - | 1.7 | 4.5 | pF |
| Input Capacitance (V EB = 0.5 V, I C = 0, f = 1.0 MHz) | C ibo | - | 10 | - | pF |
| Small - Signal Current Gain (I C = 2.0 mA, V CE = 5.0 V, f = 1.0 kHz) BC546 BC547/548 BC547A | BC546B/547B/548B BC547C/548C h fe | 125 125 125 240 450 | - - 220 330 600 | 500 900 260 500 900 | - |
| Noise Figure (I C = 0.2 mA, V CE = 5.0 V, R S = 2 k W , f = 1.0 kHz, D f = 200 Hz) BC546 BC547 | BC548 NF | - - - | 2.0 2.0 2.0 | 10 10 10 | dB |
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