2SA1943
NPN Epitaxial Silicon Power TransistorThe 2SA1943 is a npn epitaxial silicon power transistor from onsemi. View the full 2SA1943 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official 2SA1943 datasheet (PDF) — the source this page was extracted from.
2SA1943 Key Specifications
| Parameter | Value |
|---|---|
| Base Current | 1.5 A |
| Collector Current (DC) | 17 A |
| Output Capacitance Cob | 200 pF typ |
| Transition Frequency FT | 30 MHz |
| Polarity (This Datasheet) | NPN (2SA1943 is the PNP complement) |
| VCE(Sat) (IC=8A, IB=0.8A) | 0.4 V typ, 3 V max |
| Emitter-Base Voltage (BVEBO) | 5 V |
| Junction/Storage Temperature | -50°C to +150°C |
| Power Dissipation (TC=25°C) | 150 W |
| Collector-Base Voltage (BVCBO) | 250 V |
| Collector-Emitter Voltage (BVCEO) | 250 V |
| Thermal Resistance Junction To Case | 0.83 °C/W |
| DC Current Gain HFE1 (VCE=5V, IC=1A) | 55 to 160 |
| DC Current Gain HFE2 (VCE=5V, IC=7A) | 35 min, 60 typ |
2SA1943 Overview
Part: 2SC5200OTU, FJL4315OTU — onsemi
Type: NPN Epitaxial Silicon Transistor
Description: High power NPN epitaxial silicon transistor with 150 W power dissipation, 17 A collector current capability, 250 V collector-emitter voltage, and 30 MHz high frequency.
Operating Conditions:
- Operating temperature: -50 to +150 °C
- Collector-Emitter Voltage: up to 250 V
- Collector Current: up to 17 A
Absolute Maximum Ratings:
- Max Collector-Base Voltage: 250 V
- Max Collector-Emitter Voltage: 250 V
- Max Emitter-Base Voltage: 5 V
- Max Collector Current (DC): 17 A
- Max Base Current: 1.5 A
- Max Total Device Dissipation (TC = 25 °C): 150 W
- Max Junction and Storage Temperature: -50 to +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (BVCEO): 250 V (IC = 10 mA, RBE = ∞)
- DC Current Gain (hFE1): 55 min (VCE = 5 V, IC = 1 A)
- DC Current Gain (hFE2): 35 min, 60 typ (VCE = 5 V, IC = 7 A)
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.4 V typ, 3 V max (IC = 8 A, IB = 0.8 A)
- Base-Emitter On Voltage (VBE(on)): 1 V typ, 1.5 V max (VCE = 5 V, IC = 7 A)
- Current Gain Bandwidth Product (fT): 30 MHz typ (VCE = 5 V, IC = 1 A)
- Collector Cut-Off Current (ICBO): 5 mA max (VCB = 230 V, IE = 0)
- Output Capacitance (Cob): 200 pF typ (VCB = 10 V, f = 1 MHz)
Features:
- High Power Dissipation: 150 W
- High Current Capability: IC = 17 A
- High Frequency: 30 MHz
- Wide S.O.A. for Reliable Operation
- High Voltage: VCEO = 250 V
- Excellent Gain Linearity for Low THD
- Thermal and Electrical Spice Models are Available
- Complement to 2SA1943 / FJL4215
- Pb-Free and RoHS Compliant
Applications:
- General Purpose Power Amplifier
- High-Fidelity Audio Output Amplifier
Package:
- TO-264-3LD
2SA1943 Features
- High Power Dissipation: 150 W
- High Current Capability: I C = 17 A
- High Frequency: 30 MHz
- Wide S.O.A. for Reliable Operation
- High Voltage: VCEO = 250 V
- Excellent Gain Linearity for Low THD
- Thermal and Electrical Spice Models are Available
- Complement to 2SA1943 / FJL4215
- Same Transistor is also Available in:
- ♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts
- ♦ TO220 Package, FJP5200 : 80 Watts
- ♦ TO220F Package, FJPF5200 : 50 Watts
- These Devices are Pb -Free and are RoHS Compliant
2SA1943 Applications
- General Purpose Power Amplifier
- High -Fidelity Audio Output Amplifier
2SA1943 Electrical Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BV CBO | Collector - Base Breakdown Voltage | I C = 5 mA, I E = 0 | 250 | V | ||
| BV CEO | Collector - Emitter Breakdown Voltage | I C = 10 mA, R BE = ∞ | 250 | V | ||
| BV EBO | Emitter - Base Breakdown Voltage | I E = 5 mA, I C = 0 | 5 | V | ||
| I CBO | Collector Cut - Off Current | V CB = 230 V, I E = 0 | 5 | m A | ||
| I EBO | Emitter Cut - Off Current | V EB = 5 V, I C = 0 | 5 | m A | ||
| h FE1 | DC Current Gain | V CE = 5 V, I C = 1 A | 55 | 160 | ||
| h FE2 | DC Current Gain | V CE = 5 V, I C = 7 A | 35 | 60 | ||
| V CE (sat) | Collector - Emitter Saturation Voltage | I C = 8 A, I B = 0.8 A | 0.4 | 3 | V | |
| V BE (on) | Base - Emitter On Voltage | V CE = 5 V, I C = 7 A | 1 | 1.5 | V | |
| f T | Current Gain Bandwidth Product | V CE = 5 V, I C = 1 A | 30 | MHz | ||
| C ob | Output Capacitance | V CB = 10 V, f = 1 MHz | 200 | pF |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: Pulse Width = 20 m s, Duty Cycle ≤ 2%
2SA1943 Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Units |
|---|---|---|---|
| Collector - Base Voltage | BV CBO | 250 | V |
| Collector - Emitter Voltage | BV CEO | 250 | V |
| Emitter - Base Voltage | BV EBO | 5 | V |
| Collector Current (DC) | I C | 17 | A |
| Base Current | I B | 1.5 | A |
| Total Device Dissipation (T C = 25 ° C) Derate Above 25 ° C | P D | 150 1.04 | W W/ ° C |
| Junction and Storage Temperature | T J , T STG | - 50 ~ +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
2SA1943 Thermal Information
(T A = 25 ° C unless otherwise noted)
| Parameter | Symbol | Max. | Units |
|---|---|---|---|
| Thermal Resistance, Junction to Case | R q JC | 0.83 | ° C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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Then ask: "Can the 2SA1943 run from my 12 V rail? Check it against the datasheet limits."
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