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2SA1943

NPN Epitaxial Silicon Power Transistor

The 2SA1943 is a npn epitaxial silicon power transistor from onsemi. View the full 2SA1943 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official 2SA1943 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

2SA1943 Key Specifications

ParameterValue
Base Current1.5 A
Collector Current (DC)17 A
Output Capacitance Cob200 pF typ
Transition Frequency FT30 MHz
Polarity (This Datasheet)NPN (2SA1943 is the PNP complement)
VCE(Sat) (IC=8A, IB=0.8A)0.4 V typ, 3 V max
Emitter-Base Voltage (BVEBO)5 V
Junction/Storage Temperature-50°C to +150°C
Power Dissipation (TC=25°C)150 W
Collector-Base Voltage (BVCBO)250 V
Collector-Emitter Voltage (BVCEO)250 V
Thermal Resistance Junction To Case0.83 °C/W
DC Current Gain HFE1 (VCE=5V, IC=1A)55 to 160
DC Current Gain HFE2 (VCE=5V, IC=7A)35 min, 60 typ

2SA1943 Overview

Part: 2SC5200OTU, FJL4315OTU — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: High power NPN epitaxial silicon transistor with 150 W power dissipation, 17 A collector current capability, 250 V collector-emitter voltage, and 30 MHz high frequency.

Operating Conditions:

  • Operating temperature: -50 to +150 °C
  • Collector-Emitter Voltage: up to 250 V
  • Collector Current: up to 17 A

Absolute Maximum Ratings:

  • Max Collector-Base Voltage: 250 V
  • Max Collector-Emitter Voltage: 250 V
  • Max Emitter-Base Voltage: 5 V
  • Max Collector Current (DC): 17 A
  • Max Base Current: 1.5 A
  • Max Total Device Dissipation (TC = 25 °C): 150 W
  • Max Junction and Storage Temperature: -50 to +150 °C

Key Specs:

  • Collector-Emitter Breakdown Voltage (BVCEO): 250 V (IC = 10 mA, RBE = ∞)
  • DC Current Gain (hFE1): 55 min (VCE = 5 V, IC = 1 A)
  • DC Current Gain (hFE2): 35 min, 60 typ (VCE = 5 V, IC = 7 A)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.4 V typ, 3 V max (IC = 8 A, IB = 0.8 A)
  • Base-Emitter On Voltage (VBE(on)): 1 V typ, 1.5 V max (VCE = 5 V, IC = 7 A)
  • Current Gain Bandwidth Product (fT): 30 MHz typ (VCE = 5 V, IC = 1 A)
  • Collector Cut-Off Current (ICBO): 5 mA max (VCB = 230 V, IE = 0)
  • Output Capacitance (Cob): 200 pF typ (VCB = 10 V, f = 1 MHz)

Features:

  • High Power Dissipation: 150 W
  • High Current Capability: IC = 17 A
  • High Frequency: 30 MHz
  • Wide S.O.A. for Reliable Operation
  • High Voltage: VCEO = 250 V
  • Excellent Gain Linearity for Low THD
  • Thermal and Electrical Spice Models are Available
  • Complement to 2SA1943 / FJL4215
  • Pb-Free and RoHS Compliant

Applications:

  • General Purpose Power Amplifier
  • High-Fidelity Audio Output Amplifier

Package:

  • TO-264-3LD

2SA1943 Features

  • High Power Dissipation: 150 W
  • High Current Capability: I C = 17 A
  • High Frequency: 30 MHz
  • Wide S.O.A. for Reliable Operation
  • High Voltage: VCEO = 250 V
  • Excellent Gain Linearity for Low THD
  • Thermal and Electrical Spice Models are Available
  • Complement to 2SA1943 / FJL4215
  • Same Transistor is also Available in:
  • ♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts
  • ♦ TO220 Package, FJP5200 : 80 Watts
  • ♦ TO220F Package, FJPF5200 : 50 Watts
  • These Devices are Pb -Free and are RoHS Compliant

2SA1943 Applications

  • General Purpose Power Amplifier
  • High -Fidelity Audio Output Amplifier

2SA1943 Electrical Characteristics

SymbolParameterConditionsMin.Typ.Max.Unit
BV CBOCollector - Base Breakdown VoltageI C = 5 mA, I E = 0250V
BV CEOCollector - Emitter Breakdown VoltageI C = 10 mA, R BE = ∞250V
BV EBOEmitter - Base Breakdown VoltageI E = 5 mA, I C = 05V
I CBOCollector Cut - Off CurrentV CB = 230 V, I E = 05m A
I EBOEmitter Cut - Off CurrentV EB = 5 V, I C = 05m A
h FE1DC Current GainV CE = 5 V, I C = 1 A55160
h FE2DC Current GainV CE = 5 V, I C = 7 A3560
V CE (sat)Collector - Emitter Saturation VoltageI C = 8 A, I B = 0.8 A0.43V
V BE (on)Base - Emitter On VoltageV CE = 5 V, I C = 7 A11.5V
f TCurrent Gain Bandwidth ProductV CE = 5 V, I C = 1 A30MHz
C obOutput CapacitanceV CB = 10 V, f = 1 MHz200pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Pulse Test: Pulse Width = 20 m s, Duty Cycle ≤ 2%

2SA1943 Absolute Maximum Ratings

ParameterSymbolRatingsUnits
Collector - Base VoltageBV CBO250V
Collector - Emitter VoltageBV CEO250V
Emitter - Base VoltageBV EBO5V
Collector Current (DC)I C17A
Base CurrentI B1.5A
Total Device Dissipation (T C = 25 ° C) Derate Above 25 ° CP D150 1.04W W/ ° C
Junction and Storage TemperatureT J , T STG- 50 ~ +150° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

2SA1943 Thermal Information

(T A = 25 ° C unless otherwise noted)

ParameterSymbolMax.Units
Thermal Resistance, Junction to CaseR q JC0.83° C/W

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
2SC5200onsemiTO-264-3
2SC5242onsemi—
FJL4215onsemiTO-264-3LD
FJL4315onsemiTO-264-3

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  • 2N4921G – onsemi, NPN Medium-Power Silicon Transistor
  • 2N4922G – onsemi, Medium-Power NPN Silicon Transistor

All BJTs datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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