2SC5200

Part: 2SC5200OTU, FJL4315OTU — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: High power NPN epitaxial silicon transistor with 150 W power dissipation, 17 A collector current capability, 250 V collector-emitter voltage, and 30 MHz high frequency.

Operating Conditions:

• Operating temperature: -50 to +150 °C
• Collector-Emitter Voltage: up to 250 V
• Collector Current: up to 17 A

Absolute Maximum Ratings:

• Max Collector-Base Voltage: 250 V
• Max Collector-Emitter Voltage: 250 V
• Max Emitter-Base Voltage: 5 V
• Max Collector Current (DC): 17 A
• Max Base Current: 1.5 A
• Max Total Device Dissipation (TC = 25 °C): 150 W
• Max Junction and Storage Temperature: -50 to +150 °C

Key Specs:

• Collector-Emitter Breakdown Voltage (BVCEO): 250 V (IC = 10 mA, RBE = ∞)
• DC Current Gain (hFE1): 55 min (VCE = 5 V, IC = 1 A)
• DC Current Gain (hFE2): 35 min, 60 typ (VCE = 5 V, IC = 7 A)
• Collector-Emitter Saturation Voltage (VCE(sat)): 0.4 V typ, 3 V max (IC = 8 A, IB = 0.8 A)
• Base-Emitter On Voltage (VBE(on)): 1 V typ, 1.5 V max (VCE = 5 V, IC = 7 A)
• Current Gain Bandwidth Product (fT): 30 MHz typ (VCE = 5 V, IC = 1 A)
• Collector Cut-Off Current (ICBO): 5 mA max (VCB = 230 V, IE = 0)
• Output Capacitance (Cob): 200 pF typ (VCB = 10 V, f = 1 MHz)

Features:

• High Power Dissipation: 150 W
• High Current Capability: IC = 17 A
• High Frequency: 30 MHz
• Wide S.O.A. for Reliable Operation
• High Voltage: VCEO = 250 V
• Excellent Gain Linearity for Low THD
• Thermal and Electrical Spice Models are Available
• Complement to 2SA1943 / FJL4215
• Pb-Free and RoHS Compliant

Applications:

• General Purpose Power Amplifier
• High-Fidelity Audio Output Amplifier

Package:

• TO-264-3LD

• High Power Dissipation: 150 W
• High Current Capability: I C = 17 A
• High Frequency: 30 MHz
• Wide S.O.A. for Reliable Operation
• High Voltage: VCEO = 250 V
• Excellent Gain Linearity for Low THD
• Thermal and Electrical Spice Models are Available
• Complement to 2SA1943 / FJL4215
• Same Transistor is also Available in:
• ♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts
• ♦ TO220 Package, FJP5200 : 80 Watts
• ♦ TO220F Package, FJPF5200 : 50 Watts
• These Devices are Pb -Free and are RoHS Compliant

• General Purpose Power Amplifier
• High -Fidelity Audio Output Amplifier

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 20 m s, Duty Cycle ≤ 2%

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(T A = 25 ° C unless otherwise noted)