2SC5200

The 2SC5200 is an electronic component from onsemi. View the full 2SC5200 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

onsemi

Overview

Part: 2SC5200OTU, FJL4315OTU — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: High power NPN epitaxial silicon transistor with 150 W power dissipation, 17 A collector current capability, 250 V collector-emitter voltage, and 30 MHz high frequency.

Operating Conditions:

Operating temperature: -50 to +150 °C
Collector-Emitter Voltage: up to 250 V
Collector Current: up to 17 A

Absolute Maximum Ratings:

Max Collector-Base Voltage: 250 V
Max Collector-Emitter Voltage: 250 V
Max Emitter-Base Voltage: 5 V
Max Collector Current (DC): 17 A
Max Base Current: 1.5 A
Max Total Device Dissipation (TC = 25 °C): 150 W
Max Junction and Storage Temperature: -50 to +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (BVCEO): 250 V (IC = 10 mA, RBE = ∞)
DC Current Gain (hFE1): 55 min (VCE = 5 V, IC = 1 A)
DC Current Gain (hFE2): 35 min, 60 typ (VCE = 5 V, IC = 7 A)
Collector-Emitter Saturation Voltage (VCE(sat)): 0.4 V typ, 3 V max (IC = 8 A, IB = 0.8 A)
Base-Emitter On Voltage (VBE(on)): 1 V typ, 1.5 V max (VCE = 5 V, IC = 7 A)
Current Gain Bandwidth Product (fT): 30 MHz typ (VCE = 5 V, IC = 1 A)
Collector Cut-Off Current (ICBO): 5 mA max (VCB = 230 V, IE = 0)
Output Capacitance (Cob): 200 pF typ (VCB = 10 V, f = 1 MHz)

Features:

High Power Dissipation: 150 W
High Current Capability: IC = 17 A
High Frequency: 30 MHz
Wide S.O.A. for Reliable Operation
High Voltage: VCEO = 250 V
Excellent Gain Linearity for Low THD
Thermal and Electrical Spice Models are Available
Complement to 2SA1943 / FJL4215
Pb-Free and RoHS Compliant

Applications:

General Purpose Power Amplifier
High-Fidelity Audio Output Amplifier

Package:

TO-264-3LD

Features

High Power Dissipation: 150 W
High Current Capability: I C = 17 A
High Frequency: 30 MHz
Wide S.O.A. for Reliable Operation
High Voltage: VCEO = 250 V
Excellent Gain Linearity for Low THD
Thermal and Electrical Spice Models are Available
Complement to 2SA1943 / FJL4215
Same Transistor is also Available in:
♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts
♦ TO220 Package, FJP5200 : 80 Watts
♦ TO220F Package, FJPF5200 : 50 Watts
These Devices are Pb -Free and are RoHS Compliant

Applications

General Purpose Power Amplifier
High -Fidelity Audio Output Amplifier

Electrical Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV CBO	Collector - Base Breakdown Voltage	I C = 5 mA, I E = 0	250			V
BV CEO	Collector - Emitter Breakdown Voltage	I C = 10 mA, R BE = ∞	250			V
BV EBO	Emitter - Base Breakdown Voltage	I E = 5 mA, I C = 0	5			V
I CBO	Collector Cut - Off Current	V CB = 230 V, I E = 0			5	m A
I EBO	Emitter Cut - Off Current	V EB = 5 V, I C = 0			5	m A
h FE1	DC Current Gain	V CE = 5 V, I C = 1 A	55		160
h FE2	DC Current Gain	V CE = 5 V, I C = 7 A	35	60
V CE (sat)	Collector - Emitter Saturation Voltage	I C = 8 A, I B = 0.8 A		0.4	3	V
V BE (on)	Base - Emitter On Voltage	V CE = 5 V, I C = 7 A		1	1.5	V
f T	Current Gain Bandwidth Product	V CE = 5 V, I C = 1 A		30		MHz
C ob	Output Capacitance	V CB = 10 V, f = 1 MHz		200		pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Pulse Test: Pulse Width = 20 m s, Duty Cycle ≤ 2%

Absolute Maximum Ratings

Parameter	Symbol	Ratings	Units
Collector - Base Voltage	BV CBO	250	V
Collector - Emitter Voltage	BV CEO	250	V
Emitter - Base Voltage	BV EBO	5	V
Collector Current (DC)	I C	17	A
Base Current	I B	1.5	A
Total Device Dissipation (T C = 25 ° C) Derate Above 25 ° C	P D	150 1.04	W W/ ° C
Junction and Storage Temperature	T J , T STG	- 50 ~ +150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Thermal Information

(T A = 25 ° C unless otherwise noted)

Parameter	Symbol	Max.	Units
Thermal Resistance, Junction to Case	R q JC	0.83	° C/W

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
2SA1943	onsemi	—
2SC5242	onsemi	—
C7250	—	—
FJL4215	onsemi	—
FJL4315	onsemi	—

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