2SA1020

Part: 2SA1020RLRAG — onsemi Type: PNP Transistor Description: One Watt High Current PNP Transistor with 50 V Collector-Emitter breakdown voltage, 2.0 A continuous collector current, and 1.5 W total power dissipation.

Operating Conditions:

• Collector-Emitter Voltage: up to 50 Vdc
• Collector-Base Voltage: up to 50 Vdc
• Emitter-Base Voltage: up to 5.0 Vdc
• Operating and Storage Junction Temperature: -55 to +150 °C

Absolute Maximum Ratings:

• Max Collector-Emitter Voltage: 50 Vdc
• Max Collector-Base Voltage: 50 Vdc
• Max Emitter-Base Voltage: 5.0 Vdc
• Max continuous Collector Current: 2.0 Adc
• Max Total Power Dissipation (T_C = 25 °C): 1.5 W
• Max Junction/Storage Temperature: +150 °C

Key Specs:

• Collector-Emitter Breakdown Voltage (V_BR_CEO): 50 Vdc (I_C = 10 mAdc, I_B = 0)
• Collector Cutoff Current (I_CBO): 1.0 mAdc max (V_CB = 50 Vdc, I_E = 0)
• Emitter Cutoff Current (I_EBO): 1.0 mAdc max (V_EB = 5.0 V, I_C = 0)
• DC Current Gain (h_FE): 70 min (I_C = 500 mA, V_CE = 2.0 V)
• DC Current Gain (h_FE): 40 min (I_C = 1.5 A, V_CE = 2.0 V)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 0.5 Vdc max (I_C = 1.0 A, I_B = 50 mA)
• Base-Emitter Saturation Voltage (V_BE(sat)): 1.2 Vdc max (I_C = 1.0 A, I_B = 50 mA)
• Current-Gain-Bandwidth Product (f_T): 100 MHz min (I_C = 500 mAdc, V_CE = 2.0 Vdc, f = 100 MHz)

Features:

• Pb-Free Device

Package:

• TO-92

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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