2SA1020
PNP High Current TransistorThe 2SA1020 is a pnp high current transistor from onsemi. View the full 2SA1020 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official 2SA1020 datasheet (PDF) — the source this page was extracted from.
2SA1020 Key Specifications
| Parameter | Value |
|---|---|
| Transition Frequency (FT) | 100 MHz min |
| Emitter-Base Voltage (VEB) | 5.0 V |
| Collector-Base Voltage (VCB) | 50 V |
| Power Dissipation (TA = 25°C) | 900 mW |
| Power Dissipation (TC = 25°C) | 1.5 W |
| Collector Cutoff Current (ICBO) | 1.0 µA max |
| Collector-Emitter Voltage (VCE) | 50 V |
| Collector Current (IC) Continuous | 2.0 A |
| Thermal Resistance Junction-To-Case | 83.3 °C/W |
| Thermal Resistance Junction-To-Ambient | 125 °C/W |
| Base-Emitter Saturation Voltage (VBE(Sat)) | 1.2 V max at IC = 1.0 A, IB = 50 mA |
| Operating And Storage Junction Temperature | -55°C to +150°C |
| Collector-Emitter Saturation Voltage (VCE(Sat)) | 0.5 V max at IC = 1.0 A, IB = 50 mA |
| DC Current Gain (HFE) At IC = 1.5 A, VCE = 2.0 V | 40 min |
| DC Current Gain (HFE) At IC = 500 MA, VCE = 2.0 V | 70 to 240 |
2SA1020 Overview
Part: 2SA1020RLRAG — onsemi Type: PNP Transistor Description: One Watt High Current PNP Transistor with 50 V Collector-Emitter breakdown voltage, 2.0 A continuous collector current, and 1.5 W total power dissipation.
Operating Conditions:
- Collector-Emitter Voltage: up to 50 Vdc
- Collector-Base Voltage: up to 50 Vdc
- Emitter-Base Voltage: up to 5.0 Vdc
- Operating and Storage Junction Temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max Collector-Emitter Voltage: 50 Vdc
- Max Collector-Base Voltage: 50 Vdc
- Max Emitter-Base Voltage: 5.0 Vdc
- Max continuous Collector Current: 2.0 Adc
- Max Total Power Dissipation (T_C = 25 °C): 1.5 W
- Max Junction/Storage Temperature: +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (V_BR_CEO): 50 Vdc (I_C = 10 mAdc, I_B = 0)
- Collector Cutoff Current (I_CBO): 1.0 mAdc max (V_CB = 50 Vdc, I_E = 0)
- Emitter Cutoff Current (I_EBO): 1.0 mAdc max (V_EB = 5.0 V, I_C = 0)
- DC Current Gain (h_FE): 70 min (I_C = 500 mA, V_CE = 2.0 V)
- DC Current Gain (h_FE): 40 min (I_C = 1.5 A, V_CE = 2.0 V)
- Collector-Emitter Saturation Voltage (V_CE(sat)): 0.5 Vdc max (I_C = 1.0 A, I_B = 50 mA)
- Base-Emitter Saturation Voltage (V_BE(sat)): 1.2 Vdc max (I_C = 1.0 A, I_B = 50 mA)
- Current-Gain-Bandwidth Product (f_T): 100 MHz min (I_C = 500 mAdc, V_CE = 2.0 Vdc, f = 100 MHz)
Features:
- Pb-Free Device
Package:
- TO-92
2SA1020 Electrical Characteristics
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| OFF CHARACTERISTICS | ||||
| Collector - Emitter Breakdown Voltage (Note 1) (I C = 10 mAdc, I B = 0) | V (BR)CEO | 50 | - | Vdc |
| Collector Cutoff Current (V CB = 50 Vdc, I E = 0) | I CBO | - | 1.0 | m Adc |
| Emitter Cutoff Current (V EB = 5.0 V, I C = 0) | I EBO | - | 1.0 | m Adc |
| ON CHARACTERISTICS (Note 2) | ||||
| DC Current Gain (I C = 500 mA, V CE = 2.0 V) (I C = 1.5 A, V CE = 2.0 V) | h FE | 70 40 | 240 - | - |
| Collector - Emitter Saturation Voltage (I C = 1.0 A, I B = 50 mA) | V CE(sat) | - | 0.5 | Vdc |
| Base - Emitter Saturation Voltage (I C = 1.0 A, I B = 50 mA) | V BE(sat) | - | 1.2 | Vdc |
| SMALL - SIGNAL CHARACTERISTICS | ||||
| Current - Gain - Bandwidth Product (Note 3) (I C = 500 mAdc, V CE = 2.0 Vdc, f = 100 MHz) | f T | 100 | - | MHz |
2SA1020 Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector - Emitter Voltage | V CE | 50 | Vdc |
| Collector - Base Voltage | V CB | 50 | Vdc |
| Emitter - Base Voltage | V EB | 5.0 | Vdc |
| Collector Current - Continuous | I C | 2.0 | Adc |
| Total Power Dissipation@T A = 25 ° C Derate above 25 ° C | P D | 900 5.0 | mW mW/ ° C |
| Total Power Dissipation@T C = 25 ° C Derate above 25 ° C | P D | 1.5 12 | W mW/ ° C |
| Operating and Storage Junction Temperature Range | T J , T stg | - 55 to +150 | ° C |
2SA1020 Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Junction - to - Ambient | R q JA | 125 | ° C/W |
| Thermal Resistance, Junction - to - Case | R q JC | 83.3 | ° C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
2SA1020 Package Information
| INCHES | INCHES | MILLIMETERS | MILLIMETERS | |
|---|---|---|---|---|
| DIM | MIN | MAX | MIN | MAX |
| A | 0.175 | 0.205 | 4.44 | 5.21 |
| B | 0.290 | 0.310 | 7.37 | 7.87 |
| C | 0.125 | 0.165 | 3.18 | 4.19 |
| D | 0.018 | 0.021 | 0.46 | 0.53 |
| F | 0.016 | 0.019 | 0.41 | 0.48 |
| G | 0.045 | 0.055 | 1.15 | 1.39 |
| H | 0.095 | 0.105 | 2.42 | 2.66 |
| J | 0.018 | 0.024 | 0.46 | 0.61 |
| K | 0.500 | --- | 12.70 | --- |
| L | 0.250 | --- | 6.35 | --- |
| N | 0.080 | 0.105 | 2.04 | 2.66 |
| P | --- | 0.100 | --- | 2.54 |
| R | 0.135 | --- | 3.43 | --- |
| V | 0.135 | --- | 3.43 | --- |
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 'Typical' parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including 'Typicals' must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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