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2SA1020

PNP High Current Transistor

The 2SA1020 is a pnp high current transistor from onsemi. View the full 2SA1020 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official 2SA1020 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

TO-92

2SA1020 Key Specifications

ParameterValue
Transition Frequency (FT)100 MHz min
Emitter-Base Voltage (VEB)5.0 V
Collector-Base Voltage (VCB)50 V
Power Dissipation (TA = 25°C)900 mW
Power Dissipation (TC = 25°C)1.5 W
Collector Cutoff Current (ICBO)1.0 µA max
Collector-Emitter Voltage (VCE)50 V
Collector Current (IC) Continuous2.0 A
Thermal Resistance Junction-To-Case83.3 °C/W
Thermal Resistance Junction-To-Ambient125 °C/W
Base-Emitter Saturation Voltage (VBE(Sat))1.2 V max at IC = 1.0 A, IB = 50 mA
Operating And Storage Junction Temperature-55°C to +150°C
Collector-Emitter Saturation Voltage (VCE(Sat))0.5 V max at IC = 1.0 A, IB = 50 mA
DC Current Gain (HFE) At IC = 1.5 A, VCE = 2.0 V40 min
DC Current Gain (HFE) At IC = 500 MA, VCE = 2.0 V70 to 240

2SA1020 Overview

Part: 2SA1020RLRAG — onsemi Type: PNP Transistor Description: One Watt High Current PNP Transistor with 50 V Collector-Emitter breakdown voltage, 2.0 A continuous collector current, and 1.5 W total power dissipation.

Operating Conditions:

  • Collector-Emitter Voltage: up to 50 Vdc
  • Collector-Base Voltage: up to 50 Vdc
  • Emitter-Base Voltage: up to 5.0 Vdc
  • Operating and Storage Junction Temperature: -55 to +150 °C

Absolute Maximum Ratings:

  • Max Collector-Emitter Voltage: 50 Vdc
  • Max Collector-Base Voltage: 50 Vdc
  • Max Emitter-Base Voltage: 5.0 Vdc
  • Max continuous Collector Current: 2.0 Adc
  • Max Total Power Dissipation (T_C = 25 °C): 1.5 W
  • Max Junction/Storage Temperature: +150 °C

Key Specs:

  • Collector-Emitter Breakdown Voltage (V_BR_CEO): 50 Vdc (I_C = 10 mAdc, I_B = 0)
  • Collector Cutoff Current (I_CBO): 1.0 mAdc max (V_CB = 50 Vdc, I_E = 0)
  • Emitter Cutoff Current (I_EBO): 1.0 mAdc max (V_EB = 5.0 V, I_C = 0)
  • DC Current Gain (h_FE): 70 min (I_C = 500 mA, V_CE = 2.0 V)
  • DC Current Gain (h_FE): 40 min (I_C = 1.5 A, V_CE = 2.0 V)
  • Collector-Emitter Saturation Voltage (V_CE(sat)): 0.5 Vdc max (I_C = 1.0 A, I_B = 50 mA)
  • Base-Emitter Saturation Voltage (V_BE(sat)): 1.2 Vdc max (I_C = 1.0 A, I_B = 50 mA)
  • Current-Gain-Bandwidth Product (f_T): 100 MHz min (I_C = 500 mAdc, V_CE = 2.0 Vdc, f = 100 MHz)

Features:

  • Pb-Free Device

Package:

  • TO-92

2SA1020 Electrical Characteristics

CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 1) (I C = 10 mAdc, I B = 0)V (BR)CEO50-Vdc
Collector Cutoff Current (V CB = 50 Vdc, I E = 0)I CBO-1.0m Adc
Emitter Cutoff Current (V EB = 5.0 V, I C = 0)I EBO-1.0m Adc
ON CHARACTERISTICS (Note 2)
DC Current Gain (I C = 500 mA, V CE = 2.0 V) (I C = 1.5 A, V CE = 2.0 V)h FE70 40240 --
Collector - Emitter Saturation Voltage (I C = 1.0 A, I B = 50 mA)V CE(sat)-0.5Vdc
Base - Emitter Saturation Voltage (I C = 1.0 A, I B = 50 mA)V BE(sat)-1.2Vdc
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (Note 3) (I C = 500 mAdc, V CE = 2.0 Vdc, f = 100 MHz)f T100-MHz

2SA1020 Absolute Maximum Ratings

RatingSymbolValueUnit
Collector - Emitter VoltageV CE50Vdc
Collector - Base VoltageV CB50Vdc
Emitter - Base VoltageV EB5.0Vdc
Collector Current - ContinuousI C2.0Adc
Total Power Dissipation@T A = 25 ° C Derate above 25 ° CP D900 5.0mW mW/ ° C
Total Power Dissipation@T C = 25 ° C Derate above 25 ° CP D1.5 12W mW/ ° C
Operating and Storage Junction Temperature RangeT J , T stg- 55 to +150° C

2SA1020 Thermal Information

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction - to - AmbientR q JA125° C/W
Thermal Resistance, Junction - to - CaseR q JC83.3° C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

2SA1020 Package Information

INCHESINCHESMILLIMETERSMILLIMETERS
DIMMINMAXMINMAX
A0.1750.2054.445.21
B0.2900.3107.377.87
C0.1250.1653.184.19
D0.0180.0210.460.53
F0.0160.0190.410.48
G0.0450.0551.151.39
H0.0950.1052.422.66
J0.0180.0240.460.61
K0.500---12.70---
L0.250---6.35---
N0.0800.1052.042.66
P---0.100---2.54
R0.135---3.43---
V0.135---3.43---

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 'Typical' parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including 'Typicals' must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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All BJTs datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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