2SC5706
The 2SC5706 is an electronic component from ON Semiconductor. View the full 2SC5706 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
ON Semiconductor
Overview
Part: 2SA2039/2SC5706 — ON Semiconductor
Type: Bipolar Transistor (PNP/NPN Pair)
Description: A 50V, 5A bipolar transistor pair (PNP 2SA2039 and NPN 2SC5706) featuring low collector-to-emitter saturation voltage, large current capacitance, and high-speed switching.
Operating Conditions:
- Collector-to-Emitter Voltage (VCEO): up to 50 V
- Collector Current (IC): up to 5 A
- Junction temperature: up to 150 °C
Absolute Maximum Ratings:
- Max Collector-to-Base Voltage (VCBO): 100 V (NPN), -50 V (PNP)
- Max Collector-to-Emitter Voltage (VCES): 100 V (NPN), -50 V (PNP)
- Max Collector-to-Emitter Voltage (VCEO): 50 V (NPN), -50 V (PNP)
- Max continuous Collector Current (IC): 5 A (NPN), -5 A (PNP)
- Max Junction Temperature (Tj): 150 °C
- Max Storage Temperature (Tstg): -55 to +150 °C
Key Specs:
- DC Current Gain (hFE): 200 min (VCE=2V, IC=500mA)
- Gain-Bandwidth Product (fT): 400 MHz typ (360 MHz for PNP) (VCE=10V, IC=500mA)
- Collector-to-Emitter Saturation Voltage (VCE(sat)1): 90 mV typ (115 mV for PNP) (IC=1A, IB=50mA)
- Base-to-Emitter Saturation Voltage (VBE(sat)): 0.89 V typ (1.2 V max) (VCE=2V, IB=100mA)
- Collector-to-Emitter Breakdown Voltage (V(BR)CEO): 50 V min (IC=1mA, RBE= ∞)
- Turn-On Time (ton): 35 ns typ (30 ns for PNP)
- Fall Time (tf): 20 ns typ (15 ns for PNP)
Features:
- Adoption of FBET and MBIT processes
- Low collector-to-emitter saturation voltage
- Large current capacitance
- High-speed switching
- High allowable power dissipation
Applications:
- DC / DC converter
- Relay drivers
- Lamp drivers
- Motor drivers
- Flash
Package:
- TP (JEITA, JEDEC: SC-64, TO-251)
- TP-FA (JEITA, JEDEC: SC-63, TO-252)
Features
- Adoption of FBET and MBIT processes
- Low collector-to-emitter saturation voltage
Applications
- DC / DC converter, relay drivers, lamp drivers, motor drivers, fl ash
Electrical Characteristics
| Parameter | Symbol | Conditions | Ratings | Ratings | Ratings | Unit |
|---|---|---|---|---|---|---|
| min | typ | max | ||||
| Collector Cutoff Current | ICBO | VCB=(- -)40V, I E=0A | (- -)1 | μ A | ||
| Emitter Cutoff Current | IEBO | VEB=(- -)4V, IC=0A | (- -)1 | μ A | ||
| DC Current Gain | h FE | VCE=(- -)2V, I C=(- -)500mA | 200 | 560 | ||
| Gain-Bandwidth Product | f T | VCE=(- -)10V, I C=(- -)500mA | (360)400 | MHz | ||
| Output Capacitance | Cob | VCB=(- -)10V, f=1MHz | (24)15 | pF | ||
| Collector-to-Emitter Saturation Voltage | VCE(sat)1 | I C=(- -)1A, I B=(- -)50mA | (- -115)90 | (- -195)135 | mV | |
| Collector-to-Emitter Saturation Voltage | VCE(sat)2 | I C=(- -)2A, I B=(- -)100mA | (- -255)160 | (- -430)240 | mV | |
| Base-to-Emitter Saturation Voltage | VBE(sat) | VCE=(- -)2V, I B=(- -)100mA | (- -)0.89 | (- -)1.2 | V | |
| Collector-to-Base Breakdown Voltage | V(BR)CBO | I C=(- -)10 μ A, I E=0A | (- -50)100 | V | ||
| Collector-to-Emitter Breakdown Voltage | V(BR)CES | I C=(- -)100 μ A, RBE=0 Ω | (- -50)100 | V | ||
| Collector-to-Emitter Breakdown Voltage | V(BR)CEO | I C=(- -)1mA, RBE= ∞ | (- -)50 | V | ||
| Emitter-to-Base Breakdown Voltage | V(BR)EBO | I E=(- -)10 μ A, IC=0A | (- -)6 | V | ||
| Turn-On Time | t on | See specified Test Circuit. | (30)35 | ns | ||
| Storage Time | t stg | See specified Test Circuit. | (230)300 | ns | ||
| Fall Time | t f | (15)20 | ns |
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | (- -50)100 | V | |
| Collector-to-Emitter Voltage | VCES | (- -50)100 | V | |
| Collector-to-Emitter Voltage | VCEO | (- -)50 | V | |
| Emitter-to-Base Voltage | VEBO | (- -)6 | V | |
| Collector Current | IC | (- -)5 | A | |
| Collector Current (Pulse) | ICP | (- -)7.5 | A |
Continued on next page.
Package Information
7518-003
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