2SC5706

NPN Low VCE(sat) Bipolar Transistor

The 2SC5706 is a npn low vce(sat) bipolar transistor from onsemi. View the full 2SC5706 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

2SC5706 shares its datasheet with 2SA2039, whose page lists every part number it covers.

Official 2SC5706 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

2SC5706 Key Specifications

Parameter	Value
Fall Time (Tf)	20ns typ
Base Current (IB)	1.2A
Turn-On Time (Ton)	35ns typ
Storage Temperature	-55°C to +150°C
Storage Time (Tstg)	300ns typ
DC Current Gain (HFE)	200 to 560 at VCE=2V, IC=500mA
Collector Current (IC)	5A
Output Capacitance (Cob)	15pF typ
Junction Temperature (Tj)	150°C
Collector Dissipation (PC)	0.8W (15W at Tc=25°C)
VCE(Sat) At IC=1A, IB=50mA	90mV typ, 135mV max
Gain-Bandwidth Product (FT)	400MHz typ
VCE(Sat) At IC=2A, IB=100mA	160mV typ, 240mV max
Collector Current Pulse (ICP)	7.5A
Emitter-To-Base Voltage (VEBO)	6V
Collector-To-Base Voltage (VCBO)	100V (NPN)
Collector-To-Emitter Voltage (VCEO)	50V
Collector-To-Emitter Voltage (VCES)	100V (NPN)

2SC5706 Overview

Part: 2SA2039/2SC5706 — ON Semiconductor

Type: Bipolar Transistor (PNP/NPN Pair)

Description: A 50V, 5A bipolar transistor pair (PNP 2SA2039 and NPN 2SC5706) featuring low collector-to-emitter saturation voltage, large current capacitance, and high-speed switching.

Operating Conditions:

Collector-to-Emitter Voltage (VCEO): up to 50 V
Collector Current (IC): up to 5 A
Junction temperature: up to 150 °C

Absolute Maximum Ratings:

Max Collector-to-Base Voltage (VCBO): 100 V (NPN), -50 V (PNP)
Max Collector-to-Emitter Voltage (VCES): 100 V (NPN), -50 V (PNP)
Max Collector-to-Emitter Voltage (VCEO): 50 V (NPN), -50 V (PNP)
Max continuous Collector Current (IC): 5 A (NPN), -5 A (PNP)
Max Junction Temperature (Tj): 150 °C
Max Storage Temperature (Tstg): -55 to +150 °C

Key Specs:

DC Current Gain (hFE): 200 min (VCE=2V, IC=500mA)
Gain-Bandwidth Product (fT): 400 MHz typ (360 MHz for PNP) (VCE=10V, IC=500mA)
Collector-to-Emitter Saturation Voltage (VCE(sat)1): 90 mV typ (115 mV for PNP) (IC=1A, IB=50mA)
Base-to-Emitter Saturation Voltage (VBE(sat)): 0.89 V typ (1.2 V max) (VCE=2V, IB=100mA)
Collector-to-Emitter Breakdown Voltage (V(BR)CEO): 50 V min (IC=1mA, RBE= ∞)
Turn-On Time (ton): 35 ns typ (30 ns for PNP)
Fall Time (tf): 20 ns typ (15 ns for PNP)

Features:

Adoption of FBET and MBIT processes
Low collector-to-emitter saturation voltage
Large current capacitance
High-speed switching
High allowable power dissipation

Applications:

DC / DC converter
Relay drivers
Lamp drivers
Motor drivers
Flash

Package:

TP (JEITA, JEDEC: SC-64, TO-251)
TP-FA (JEITA, JEDEC: SC-63, TO-252)

2SC5706 Features

Adoption of FBET and MBIT processes
Low collector-to-emitter saturation voltage

2SC5706 Applications

DC / DC converter, relay drivers, lamp drivers, motor drivers, fl ash

2SC5706 Electrical Characteristics

Parameter	Symbol	Conditions	Ratings	Ratings	Ratings	Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(- -)40V, I E=0A			(- -)1	μ A
Emitter Cutoff Current	IEBO	VEB=(- -)4V, IC=0A			(- -)1	μ A
DC Current Gain	h FE	VCE=(- -)2V, I C=(- -)500mA	200		560
Gain-Bandwidth Product	f T	VCE=(- -)10V, I C=(- -)500mA		(360)400		MHz
Output Capacitance	Cob	VCB=(- -)10V, f=1MHz		(24)15		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)1	I C=(- -)1A, I B=(- -)50mA		(- -115)90	(- -195)135	mV
Collector-to-Emitter Saturation Voltage	VCE(sat)2	I C=(- -)2A, I B=(- -)100mA		(- -255)160	(- -430)240	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	VCE=(- -)2V, I B=(- -)100mA		(- -)0.89	(- -)1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	I C=(- -)10 μ A, I E=0A	(- -50)100			V
Collector-to-Emitter Breakdown Voltage	V(BR)CES	I C=(- -)100 μ A, RBE=0 Ω	(- -50)100			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	I C=(- -)1mA, RBE= ∞	(- -)50			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	I E=(- -)10 μ A, IC=0A	(- -)6			V
Turn-On Time	t on	See specified Test Circuit.		(30)35		ns
Storage Time	t stg	See specified Test Circuit.		(230)300		ns
Fall Time	t f			(15)20		ns

2SC5706 Absolute Maximum Ratings

Parameter	Symbol	Ratings	Unit
Collector-to-Base Voltage	VCBO	(- -50)100	V
Collector-to-Emitter Voltage	VCES	(- -50)100	V
Collector-to-Emitter Voltage	VCEO	(- -)50	V
Emitter-to-Base Voltage	VEBO	(- -)6	V
Collector Current	IC	(- -)5	A
Collector Current (Pulse)	ICP	(- -)7.5	A

Continued on next page.

2SC5706 Package Information

7518-003

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
2SA2039	onsemi	—

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All BJTs datasheets All onsemi datasheets (337)

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