2SC6082
NPN Bipolar Transistor, Low VCE(sat)The 2SC6082 is a npn bipolar transistor, low vce(sat) from onsemi. View the full 2SC6082 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official 2SC6082 datasheet (PDF) — the source this page was extracted from.
2SC6082 Key Specifications
| Parameter | Value |
|---|---|
| Fall Time (Tf) | 37 ns typ |
| Base Current (IB) | 3 A |
| Turn-On Time (Ton) | 52 ns typ |
| Storage Time (Tstg) | 560 ns typ |
| Collector Current (IC) | 15 A |
| DC Current Gain (HFE1) | 200 to 560 (VCE=2V, IC=330mA) |
| DC Current Gain (HFE2) | 50 min (VCE=2V, IC=10A) |
| Output Capacitance (Cob) | 85 pF typ |
| Junction Temperature (Tj) | 150 °C max |
| Collector Dissipation (PC) | 2 W (Ta=25°C), 23 W (Tc=25°C) |
| Storage Temperature (Tstg) | -55 to +150 °C |
| Gain-Bandwidth Product (FT) | 195 MHz typ |
| Collector Current Pulse (ICP) | 20 A |
| Emitter-To-Base Voltage (VEBO) | 6 V |
| Collector-To-Base Voltage (VCBO) | 60 V |
| Collector-To-Emitter Voltage (VCEO) | 50 V |
| Collector-To-Emitter Voltage (VCES) | 60 V |
| Collector-Emitter Saturation Voltage (VCE(Sat)) | 200 mV typ, 400 mV max |
2SC6082 Overview
Part: 2SC6082 (ordering code 2SC6082-1E) — onsemi
Type: NPN Bipolar Transistor (Low VCE(sat))
Description: 50 V, 15 A low-VCE(sat) NPN bipolar transistor with high-speed switching in a TO-220F-3SG package.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to +150 °C (junction/storage limits from the ratings table)
- Collector current: up to 15 A continuous, 20 A pulsed
Absolute Maximum Ratings:
- Max collector-to-base voltage (VCBO): 60 V
- Max collector-to-emitter voltage (VCEO): 50 V; VCES: 60 V
- Max emitter-to-base voltage (VEBO): 6 V
- Max continuous current: 15 A (IC); 20 A pulsed (PW ≤ 10 μs, duty ≤ 1%)
- Max junction temperature: 150 °C; storage temperature: -55 to +150 °C
- Collector dissipation: 2 W (Ta = 25 °C); 23 W (Tc = 25 °C)
Key Specs:
- DC current gain hFE1: 200 to 560 (VCE = 2 V, IC = 330 mA)
- DC current gain hFE2: ≥ 50 (VCE = 2 V, IC = 10 A)
- Gain-bandwidth product fT: 195 MHz typ (VCE = 10 V, IC = 2 A)
- Output capacitance Cob: 85 pF typ (VCB = 10 V, f = 1 MHz)
- VCE(sat): 200 mV typ, 400 mV max (IC = 7.5 mA, IB = 375 mA, as printed)
- VBE(sat): 1.2 V max (IC = 7.5 mA, IB = 375 mA, as printed)
- Cutoff currents ICBO, IEBO: 10 μA max (VCB = 40 V; VEB = 4 V)
- Switching: ton 52 ns, tstg 560 ns, tf 37 ns (typ)
Features:
- Low collector-to-emitter saturation voltage
- MBIT process
- Large current capacity
- High-speed switching
- Pb-free device
Applications:
- High-speed switching applications (switching regulator, driver circuit)
Package:
- TO-220F-3SG (TO-220 Fullpack, 3-lead, Case 221AT), Pb-free, 50 per tube
2SC6082 Features
- Low Collector -to -Emitter Saturation Voltage
- Adoption of MBIT Process
- Large Current Capacitance
- This is a Pb -Free Device
- High -Speed Switching
2SC6082 Applications
- High -Speed Switching Applications (Switching Regulator, Driver Circuit)
2SC6082 Electrical Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| I CBO | Collector Cutoff Current | V CB = 40 V, I E = 0 A | - | - | 10 | μ A |
| I EBO | Emitter Cutoff Current | V EB = 4 V, I C = 0 A | - | - | 10 | μ A |
| H FE 1 | DC Current Gain | V CE = 2 V, I C = 330 mA | 200 | - | 560 | |
| H FE 2 | V CE = 2 V, I C = 10 A | 50 | - | - | ||
| f T | Gain - Bandwidth Product | V CE = 10 V, I C = 2 A | - | 195 | - | MHz |
| Cob | Output Capacitance | V CB = 10 V, f = 1 MHz | - | 85 | - | pF |
| V CE (sat) | Collector - to - Emitter Saturation Voltage | I C = 7.5 mA, I B = 375 mA | - | 200 | 400 | mV |
| V BE (sat) | Base - to - Emitter Saturation Voltage | I C = 7.5 mA, I B = 375 mA | - | - | 1.2 | V |
| V (BR)CBO | Collector - to - Base Breakdown Voltage | I C = 100 m A, I E = 0 A | 60 | - | - | V |
| V (BR)CES | Collector - to - Emitter Breakdown Voltage | I C = 100 m A, R BE = 0 W | 60 | - | - | V |
| V (BR)CEO | I C = 1 mA, R BE = ∞ | 50 | - | - | V | |
| V (BR)EBO | Emitter - to - Base Breakdown Voltage | I E = 100 m A, I C = 0 A | 5 | - | - | V |
| t on | Turn - On Time | See specified Test Circuit | 52 | - | ns | |
| t stg | Storage Time | 560 | - | ns | ||
| t f | Fall Time | 37 | - | ns |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2SC6082 Absolute Maximum Ratings
| Symbol | Rating | Condition | Value | Unit |
|---|---|---|---|---|
| V CBO | Collector - to - Base Voltage | 60 | V | |
| V CES | Collector - to - Emitter Voltage | 60 | V | |
| V CEO | 50 | V | ||
| V EBO | Emitter - to - Base Voltage | 6 | V | |
| I C | Collector Current | 15 | A | |
| I CP | Collector Current (Pulse) | PW ≤ 10 μ s, duty cycle ≤ 1% | 20 | A |
| I B | Base Current | 3 | A | |
| P C | Collector Dissipation | 2 | W | |
| T C = 25 ° C | 23 | W | ||
| Tj | Junction Temperature | 150 | ° C | |
| Tstg | Storage Temperature | - 55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
TO -220 Fullpack, 3 -Lead / TO -220F -3SG CASE 221AT
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