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2SC6082

NPN Bipolar Transistor, Low VCE(sat)

The 2SC6082 is a npn bipolar transistor, low vce(sat) from onsemi. View the full 2SC6082 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official 2SC6082 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

BJTs

Package

TO-220F-3SG

2SC6082 Key Specifications

ParameterValue
Fall Time (Tf)37 ns typ
Base Current (IB)3 A
Turn-On Time (Ton)52 ns typ
Storage Time (Tstg)560 ns typ
Collector Current (IC)15 A
DC Current Gain (HFE1)200 to 560 (VCE=2V, IC=330mA)
DC Current Gain (HFE2)50 min (VCE=2V, IC=10A)
Output Capacitance (Cob)85 pF typ
Junction Temperature (Tj)150 °C max
Collector Dissipation (PC)2 W (Ta=25°C), 23 W (Tc=25°C)
Storage Temperature (Tstg)-55 to +150 °C
Gain-Bandwidth Product (FT)195 MHz typ
Collector Current Pulse (ICP)20 A
Emitter-To-Base Voltage (VEBO)6 V
Collector-To-Base Voltage (VCBO)60 V
Collector-To-Emitter Voltage (VCEO)50 V
Collector-To-Emitter Voltage (VCES)60 V
Collector-Emitter Saturation Voltage (VCE(Sat))200 mV typ, 400 mV max

2SC6082 Overview

Part: 2SC6082 (ordering code 2SC6082-1E) — onsemi

Type: NPN Bipolar Transistor (Low VCE(sat))

Description: 50 V, 15 A low-VCE(sat) NPN bipolar transistor with high-speed switching in a TO-220F-3SG package.

Operating Conditions:

  • Supply voltage: not applicable
  • Operating temperature: -55 to +150 °C (junction/storage limits from the ratings table)
  • Collector current: up to 15 A continuous, 20 A pulsed

Absolute Maximum Ratings:

  • Max collector-to-base voltage (VCBO): 60 V
  • Max collector-to-emitter voltage (VCEO): 50 V; VCES: 60 V
  • Max emitter-to-base voltage (VEBO): 6 V
  • Max continuous current: 15 A (IC); 20 A pulsed (PW ≤ 10 μs, duty ≤ 1%)
  • Max junction temperature: 150 °C; storage temperature: -55 to +150 °C
  • Collector dissipation: 2 W (Ta = 25 °C); 23 W (Tc = 25 °C)

Key Specs:

  • DC current gain hFE1: 200 to 560 (VCE = 2 V, IC = 330 mA)
  • DC current gain hFE2: ≥ 50 (VCE = 2 V, IC = 10 A)
  • Gain-bandwidth product fT: 195 MHz typ (VCE = 10 V, IC = 2 A)
  • Output capacitance Cob: 85 pF typ (VCB = 10 V, f = 1 MHz)
  • VCE(sat): 200 mV typ, 400 mV max (IC = 7.5 mA, IB = 375 mA, as printed)
  • VBE(sat): 1.2 V max (IC = 7.5 mA, IB = 375 mA, as printed)
  • Cutoff currents ICBO, IEBO: 10 μA max (VCB = 40 V; VEB = 4 V)
  • Switching: ton 52 ns, tstg 560 ns, tf 37 ns (typ)

Features:

  • Low collector-to-emitter saturation voltage
  • MBIT process
  • Large current capacity
  • High-speed switching
  • Pb-free device

Applications:

  • High-speed switching applications (switching regulator, driver circuit)

Package:

  • TO-220F-3SG (TO-220 Fullpack, 3-lead, Case 221AT), Pb-free, 50 per tube

2SC6082 Features

  • Low Collector -to -Emitter Saturation Voltage
  • Adoption of MBIT Process
  • Large Current Capacitance
  • This is a Pb -Free Device
  • High -Speed Switching

2SC6082 Applications

  • High -Speed Switching Applications (Switching Regulator, Driver Circuit)

2SC6082 Electrical Characteristics

SymbolParameterConditionsMinTypMaxUnit
I CBOCollector Cutoff CurrentV CB = 40 V, I E = 0 A--10μ A
I EBOEmitter Cutoff CurrentV EB = 4 V, I C = 0 A--10μ A
H FE 1DC Current GainV CE = 2 V, I C = 330 mA200-560
H FE 2V CE = 2 V, I C = 10 A50--
f TGain - Bandwidth ProductV CE = 10 V, I C = 2 A-195-MHz
CobOutput CapacitanceV CB = 10 V, f = 1 MHz-85-pF
V CE (sat)Collector - to - Emitter Saturation VoltageI C = 7.5 mA, I B = 375 mA-200400mV
V BE (sat)Base - to - Emitter Saturation VoltageI C = 7.5 mA, I B = 375 mA--1.2V
V (BR)CBOCollector - to - Base Breakdown VoltageI C = 100 m A, I E = 0 A60--V
V (BR)CESCollector - to - Emitter Breakdown VoltageI C = 100 m A, R BE = 0 W60--V
V (BR)CEOI C = 1 mA, R BE = ∞50--V
V (BR)EBOEmitter - to - Base Breakdown VoltageI E = 100 m A, I C = 0 A5--V
t onTurn - On TimeSee specified Test Circuit52-ns
t stgStorage Time560-ns
t fFall Time37-ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2SC6082 Absolute Maximum Ratings

SymbolRatingConditionValueUnit
V CBOCollector - to - Base Voltage60V
V CESCollector - to - Emitter Voltage60V
V CEO50V
V EBOEmitter - to - Base Voltage6V
I CCollector Current15A
I CPCollector Current (Pulse)PW ≤ 10 μ s, duty cycle ≤ 1%20A
I BBase Current3A
P CCollector Dissipation2W
T C = 25 ° C23W
TjJunction Temperature150° C
TstgStorage Temperature- 55 to +150° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO -220 Fullpack, 3 -Lead / TO -220F -3SG CASE 221AT

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All BJTs datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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