DTC114EUA

Digital NPN Transistor (Bias Resistor Built-in)

The DTC114EUA is a digital npn transistor (bias resistor built-in) from GOODWORK. View the full DTC114EUA datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

DTC114EUA shares its datasheet with DTC114E, whose page lists every part number it covers.

Official DTC114EUA datasheet (PDF) — the source this page was extracted from.

Manufacturer

GOODWORK

DTC114EUA Key Specifications

Parameter	Value
Package Size	2.0x2.1mm
Input Resistor R1	10kΩ (7 to 13kΩ)
Input Voltage (VIN)	-10V to +40V
Output Current (IO)	50mA
Storage Temperature	-55°C to +150°C
DC Current Gain (GI)	30 min at VO=5V, IO=5mA
Input Voltage VI(On)	3V min
Junction Temperature	150°C
Supply Voltage (VCC)	50V
Input Voltage VI(Off)	0.5V max
Output Voltage VO(On)	0.3V max at IO/II=10mA/0.5mA
Power Dissipation (PD)	200mW
Resistance Ratio R2/R1	0.8 to 1.2
Transition Frequency (FT)	250MHz typ
Collector Current (IC MAX)	100mA

DTC114EUA Overview

Part: DTC114E series — ROHM Co., Ltd.

Type: NPN Digital Transistor (Bias Resistor Transistor)

Description: 50 V, 100 mA NPN digital transistor with integrated 10 kΩ bias resistors for simplified inverter and switching circuit design.

Operating Conditions:

Supply voltage: up to 50 V

Absolute Maximum Ratings:

Max supply voltage: 50 V
Max continuous current: 100 mA (collector current)
Max junction/storage temperature: 150 °C

Key Specs:

Input voltage (off) (V_I(off)): 0.5 V max (V_CC = 5 V, I_O = 100 μA, Ta = 25°C)
Input voltage (on) (V_I(on)): 3 V min (V_O = 0.3 V, I_O = 10 mA, Ta = 25°C)
Output voltage (on) (V_O(on)): 0.1 V typ, 0.3 V max (I_O / I_I = 10 mA / 0.5 mA, Ta = 25°C)
Input current (I_I): 0.88 mA max (V_I = 5 V, Ta = 25°C)
Output current (off) (I_O(off)): 0.5 μA max (V_CC = 50 V, V_I = 0 V, Ta = 25°C)
DC current gain (G_I): 30 min (V_O = 5 V, I_O = 5 mA, Ta = 25°C)
Input resistance (R_1): 7 kΩ min, 10 kΩ typ, 13 kΩ max
Resistance ratio (R_2/R_1): 0.8 min, 1 typ, 1.2 max
Transition frequency (f_T): 250 MHz typ (V_CE = 10 V, I_E = -5 mA, f = 100 MHz)

Features:

Built-in biasing resistors, R1 = R2 = 10 kΩ
Thin-film bias resistors with complete isolation allow negative input biasing and eliminate parasitic effects
Configuration of inverter circuit without external input resistors
Complementary PNP types available (DTA114E series)
Lead Free / RoHS Compliant

Applications:

Switching circuit
Inverter circuit
Interface circuit
Driver circuit

Package:

VMT3 (1.2 × 1.2 mm)
EMT3F (1.6 × 1.6 mm)
EMT3 (1.6 × 1.6 mm)
UMT3F (2.0 × 2.1 mm)
UMT3 (2.0 × 2.1 mm)
SMT3 (2.9 × 2.8 mm)

DTC114EUA Features

1. Built-In Biasing Resistors, R1 = R2 = 10k W .
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).
1. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.
1. Only the on/off conditions need to be set for operation, making the circuit design easy.
1. Complementary PNP Types :DTA114E series
1. Complex transistors :EMH11 /UMH11N /IMH11A /EMG9 /UMG9N/ FMG9A ( NPN type )
1. Lead Free/RoHS Compliant.

DTC114EUA Electrical Characteristics

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Input voltage	V I(off)	V CC = 5V, I O = 100μA	-	-	0.5	V
Input voltage	V I(on)	V O = 0.3V, I O = 10mA	3	-	-	V
Output voltage	V O(on)	I O / I I = 10mA / 0.5mA	-	0.1	0.3	V
Input current	I I	V I = 5V	-	-	0.88	mA
Output current	I O(off)	V CC = 50V, V I = 0V	-	-	0.5	m A
DC current gain	G I	V O = 5V, I O = 5mA	30	-	-	-
Input resistance	R 1	-	7	10	13	k W
Resistance ratio	R 2 /R 1	-	0.8	1	1.2	-
Transition frequency	f T *1	V CE = 10V, I E = - 5mA, f = 100MHz	-	250	-	MHz

DTC114EUA Absolute Maximum Ratings

Parameter	Parameter	Symbol	Values	Unit
Supply voltage	Supply voltage	V CC	50	V
Input voltage	Input voltage	V IN	- 10 to + 40	V
Output current	Output current	I O	50	mA
Collector current	Collector current	I C(MAX.) *1	100	mA
Power dissipation	DTC114EM DTC114EEB DTC114EE	P D *2	150	mW
Power dissipation	DTC114EUB DTC114EUA DTC114EKA	P D *2	200	mW
Junction temperature	Junction temperature	T j	150	°C
Range of storage temperature	Range of storage temperature	T stg	- 55 to + 150	°C

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
DTC114E	GOODWORK	—
DTC114ECA	GOODWORK	SOT-23
DTC114EE	GOODWORK	EMT3
DTC114EEB	GOODWORK	EMT3F
DTC114EKA	GOODWORK	SOT-23
DTC114EM	GOODWORK	VMT3
DTC114EUB	GOODWORK	UMT3F

Other BJTs

DTC114ECA – GOODWORK, NPN Digital Transistor with Bias Resistors
BC847 – onsemi, NPN General-Purpose Transistor
2N2219A – onsemi, NPN High Speed Switching Transistor
2N2222 – onsemi, NPN Silicon Amplifier Transistor
2N2222A – onsemi, NPN High Speed Switching Transistor
2N3906 – onsemi, PNP Silicon General Purpose Transistor
2N4921G – onsemi, NPN Medium-Power Silicon Transistor
2N4922G – onsemi, Medium-Power NPN Silicon Transistor

All BJTs datasheets All GOODWORK datasheets (8)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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