Discrete Semiconductors Datasheets
588 Discrete Semiconductors datasheets read into specs, pinouts and ratings. Parts from onsemi, Diodes and Infineon Technologies.
Discrete Semiconductors datasheets, page 7
588 parts · page 7 of 20. Most used first, then by part number.
CH213L
WCH
Low dropout ideal diode chip with current limiting, short-circuit, over-temperature and reverse power polarity protection for DC supplies up to 1A at 5V
CSD13381F4
Texas Instruments
MOSFET N-CH 12V 2.1A 3PICOSTAR
CSD13381F4T
Texas Instruments
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
CSD18540
Texas Instruments
60 V, 1.8 mΩ N-channel NexFET power MOSFET in SON 5x6 mm package with ultra-low Qg and Qgd, avalanche rated, for DC-DC conversion and motor control
CSD18540Q5B
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
CSD18540Q5BT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
DF005S
onsemi
1.5 A, 50 V single-phase glass passivated bridge rectifier in a PDIP-4 surface mount package with 50 A surge rating and low forward voltage (discontinued).
DF01S
onsemi
1.5 A, 100 V single-phase glass passivated bridge rectifier in a PDIP-4 surface mount package with 50 A surge rating and 1.1 V max forward voltage
DF02S
onsemi
200V, 1.5A single-phase glass passivated bridge rectifier in a surface mount PDIP-4 package with 50A surge rating and 1.1V max forward voltage
DF04S
onsemi
400 V, 1.5 A single-phase glass passivated bridge rectifier in a PDIP-4 surface mount package with 50 A surge rating
DF06S
onsemi
600V, 1.5A single-phase glass passivated bridge rectifier in a PDIP-4 surface mount package with 50A surge rating and 1.1V max forward voltage.
DMG1012T
Diodes Incorporated
N-Channel Enhancement Mode MOSFET featuring low on-resistance, low gate threshold voltage, fast switching speed, and ESD protection up to 2kV.
DMG1012T-13
Diodes Incorporated
MOSFETs 20V N-Ch Enhance Mode MOSFET
DMG1012T-7
Diodes Incorporated
MOSFET N-CH 20V 630MA SOT-523
DMG3414U
Diodes Incorporated
20V N-channel enhancement mode MOSFET in SOT23 with low on-resistance (25mΩ max @ 4.5V VGS), low input capacitance and fast switching
DMG3414UQ
Diodes Incorporated
N-channel enhancement mode MOSFET with low on-resistance and fast switching speed
DMN2044UCB4
Diodes Incorporated
20V N-channel enhancement mode MOSFET with 40mΩ max RDS(ON) at 4.5V gate drive in an ultra-small 1.0mm x 1.0mm wafer-level package, for load switching and power management in portable applications
DMN62D0UT
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance, low gate threshold and fast switching for motor control and power management
DMN62D0UT-13
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance and fast switching in a SOT523 package, for motor control and power management.
DMN62D0UT-7
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance and fast switching, in SOT523 package, for motor control and power management.
DMN62D0UT4
Diodes Incorporated
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
DMN7022LFGQ
Diodes Incorporated
AEC-Q101 qualified 75V N-channel enhancement mode MOSFET with 22mΩ max RDS(ON) at 10V gate drive in a PowerDI3333-8 package; not recommended for new design (use DMTH8028LFVWQ).
DMN7022LFGQ-13
Diodes Incorporated
AEC-Q101 qualified 75V N-channel enhancement mode MOSFET in PowerDI3333-8 with 22mΩ max RDS(ON) at 10V gate drive, for automotive backlighting, power management and DC-DC converters (not recommended for new design).
DMN7022LFGQ-7
Diodes Incorporated
75V N-Channel Enhancement Mode MOSFET designed for automotive applications.
DMP2160UFDB
Diodes Incorporated
Dual P-channel enhancement mode MOSFET with low on-resistance (70mΩ @ -4.5V) and low gate threshold voltage in a low-profile U-DFN2020-6 package, AEC-Q101 qualified.
DMP2160UFDB-7
Diodes Incorporated
Dual P-Channel Enhancement Mode MOSFET featuring low on-resistance and fast switching speed.
DMP2160UFDB-7R
Diodes Incorporated
Dual P-channel enhancement mode MOSFET with low on-resistance (70mΩ @ -4.5V), -20V drain-source voltage, in a 0.5mm max height U-DFN2020-6 package; AEC-Q101 qualified.
DMP2160UFDBQ
Diodes Incorporated
Dual P-channel enhancement mode MOSFET, -20V, low RDS(ON) of 70mΩ at VGS=-4.5V, AEC-Q101 qualified, in a low-profile U-DFN2020-6 (Type B) package; the automotive-compliant variant is DMP2160UFDBQ under a separate datasheet
DMP3099L
Diodes Incorporated
DMP3099L-13
Diodes Incorporated