DF04S
Glass Passivated Bridge RectifierThe DF04S is a glass passivated bridge rectifier from onsemi. View the full DF04S datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
DF04S shares its datasheet with DF01S, whose page lists every part number it covers.
Official DF04S datasheet (PDF) — the source this page was extracted from.
DF04S Key Specifications
| Parameter | Value |
|---|---|
| Storage Temperature | -55 °C to +150 °C |
| Forward Voltage (VF) | 1.1 V max at IF = 1.5 A (typ 0.94 V) |
| Reverse Current (IR) | 5.0 µA max at 25 °C; 500 µA max at 125 °C |
| Power Dissipation (PD) | 3.1 W |
| DC Reverse Voltage (VDC) | 400 V |
| Rating For Fusing (I²T) | 10 A²s |
| Junction Capacitance (CJ) | 25 pF typ per leg (VR = 4 V, 1 MHz) |
| Operating Junction Temperature | -55 °C to +150 °C |
| Thermal Resistance Junction-To-Ambient | 50 to 105 °C/W (multi-die, depending on land pattern); 62 °C/W single-die |
| Maximum RMS Bridge Input Voltage (VRMS) | 280 V |
| Maximum Repetitive Reverse Voltage (VRRM) | 400 V |
| Average Rectified Forward Current (IF(AV)) | 1.5 A at TA = 40 °C |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 50 A (8.3 ms single half-sine) |
DF04S Overview
Part: DF005S - DF10S — onsemi
Type: Bridge Rectifier
Description: 1.5 A, 50 V to 1000 V surface mount bridge rectifier featuring a 50 A peak surge rating and 1.1 V maximum forward voltage.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to +150 °C (Operating Junction Temperature)
Absolute Maximum Ratings:
- Max supply voltage: 50 V to 1000 V (Maximum Repetitive Reverse Voltage VRRM, part-dependent)
- Max continuous current: 1.5 A (Average Rectified Forward Current IF(AV) at TA = 40 °C)
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- Maximum Forward Voltage (VF, per Element): 1.1 V (IF = 1.5 A, TA = 25 °C; typ. 0.94 V)
- Reverse Current (IR, per Element): 5.0 μA max at TA = 25 °C (at rated VR)
- Reverse Current (IR, per Element): 500 μA max at TA = 125 °C (at rated VR)
- Non-Repetitive Peak Forward Surge Current (IFSM): 50 A (8.3 ms Single Half-Sine Wave)
- Rating for Fusing (I²t): 10 A²s (t < 8.35 ms)
- Typical Capacitance (CJ, per Leg): 25 pF (VR = 4.0 V, f = 1.0 MHz)
- Power Dissipation (PD): 3.1 W (TA = 25 °C)
- Thermal Resistance Junction-to-Ambient (RθJA): 50 to 105 °C/W (Multi-Die Measurement, land-pattern dependent)
Features:
- Optimized VF: Typical 0.94 V at 1.5 A, 25 °C
- Maximum Surge Rating: IFSM = 50 A, I²t = 10 A²s
- Glass Passivated Junctions
- Green Molding Compound: IEC61249
- Lead Free Compliant to EU RoHS 2002/95/EU Directives
- Qualified with IR Reflow and Wave Soldering
- UL Certified, UL #E258596
Applications:
- Power supply rectification
Package:
- PDIP-4 GW (CASE 709AE)
DF04S Features
- Optimized VF: Typical 0.94 V at 1.5 A, 25 ° C
- Maximum Surge Rating: IFSM = 50 A, I 2 t = 10 A 2 Sec
- Glass Passivated Junctions
- Green Molding Compound: IEC61249
- Lead Free Compliant to EU RoHS 2002/95/EU Directives
- Qualified with IR Reflow and Wave Soldering
- UL Certified, UL #E258596
PDIP - 4 GW CASE 709AE
PDIP - 4 GW CASE 709AE
DF04S Electrical Characteristics
Values are at T A = 25 ° C unless otherwise noted.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V F | Forward Voltage, per Element | I F = 1.5 A | - | - | 1.1 | V |
| I R | Reverse Current, per Element at Rated V R | T A = 25 ° C | - | - | 5.0 | m A |
| T A = 125 _ C | - | - | 500 | |||
| I 2 t | Rating for Fusing (t < 8.35 ms) | - | - | - | 10 | A 2 s |
| C J | Typical Capacitance, per Leg | V R = 4.0 V, f = 1.0 MHz | - | 25 | - | pF |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 2. Minimun pads of 2 oz copper
DF04S Absolute Maximum Ratings
| Value | Value | Value | Value | Value | Value | Value | ||
|---|---|---|---|---|---|---|---|---|
| Symbol | Parameter | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S |
| V RRM | Maximum Repetitive Reverse Voltage | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| V RMS | Maximum RMS Bridge Input Voltage | 35 | 70 | 140 | 280 | 420 | 560 | 700 |
| V DC | DC Reverse Voltage at Rated I R | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| I F(AV) | Average Rectified Forward Current at T A = 40 ° C | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 |
| I FSM | Non - Repetitive Peak Forward Surge Current 8.3 ms Single Half - Sine Wave | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| T STG | Storage Temperature Range | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 |
| T J | Operating Junction Temperature | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 |
DF04S Thermal Information
| Symbol | Parameter | Value | Unit | |
|---|---|---|---|---|
| P D | Power Dissipation | Power Dissipation | 3.1 | W |
| R θ JA | Thermal Resistance, Junction - to - Ambient | Single - Die Measurement (Note 1) (Maximum Land Pattern: 13 x 13 mm) | 62 | ° C/W |
| R θ JA | Thermal Resistance, Junction - to - Ambient | Multi - Die Measurement (Note 2) (Maximum Land Pattern: 13 x 13 mm) | 50 | |
| R θ JA | Thermal Resistance, Junction - to - Ambient | Multi - Die Measurement (Note 2) (Minimum Land Pattern: 1.3 x 1.5 mm) | 105 | |
| ψ JL | Thermal Characterization Parameter, Junction to Lead | Single - Die Measurement (Note 2) (Maximum and Minimum Land Pattern) | 27 | ° C/W |
Figure 1. Maximum pads of 2 oz copper
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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