ESD5Z2.5T1G

Part: ESD5Z Series — onsemi

Type: ESD Protection Diode

Description: Micro-packaged bidirectional/unidirectional transient voltage suppressor diode family offering reverse stand-off voltages from 2.5 V to 12 V and peak power handling up to 240 W (8/20 µs) in a SOD-523 package.

Operating Conditions:

• Stand-off voltage: 2.5 V to 12 V

Absolute Maximum Ratings:

• Max continuous current: 40 A (IEC 61000-4-4 EFT)
• Max junction/storage temperature: -55 to +150 °C
• Total power dissipation: 500 mW (FR-4 board @ TA = 25 °C)
• IEC 61000-4-2 ESD contact/air: 30 kV
• Lead solder temperature: 260 °C (10 second duration)

Key Specs:

• Working peak reverse voltage (VRWM): 2.5 V to 12 V max (device dependent)
• Breakdown voltage (VBR): 4.0 V min (ESD5Z2.5) to 14.1 V min (ESD5Z12) @ IT = 1.0 mA
• Maximum reverse leakage (IR): 6.0 µA max @ 2.5 V (ESD5Z2.5), down to 0.01 µA max (ESD5Z6.0 through ESD5Z12)
• Clamping voltage (VC): 6.5 V to 17 V typ @ IPP = 5.0 A
• Clamping voltage (VC @ max IPP): 10.9 V to 25 V max
• Maximum peak pulse current (IPP): 8.8 A to 11.2 A max (8/20 µs pulse)
• Peak power dissipation (Ppk): 120 W to 240 W max (8/20 µs pulse)
• Capacitance: 55 pF to 145 pF typ @ VR = 0 V, f = 1 MHz
• Forward voltage (VF): 1.1 V max @ IF = 10 mA

Features:

• Low clamping voltage
• Small outline dimensions: 1.20 mm x 0.80 mm x 0.7 mm
• Peak power dissipation up to 240 W @ 8 x 20 µs pulse
• Response time typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• IEC61000-4-2 Level 4 ESD protection and IEC61000-4-4 Level 4 EFT protection
• AEC-Q101 qualified and PPAP capable (SZ prefix)
• Moisture Sensitivity Level MSL 1

Applications:

• Cellular phones
• Portable devices
• Digital cameras
• Power supplies

Package:

• SOD-523 (CASE 502, 1.20 mm x 0.80 mm x 0.60 mm)

• Low Clamping Voltage

Small Body Outline Dimensions: 0.047 x 0.032 (1.20 mm x 0.80 mm)

• Low Body Height: 0.028 (0.7 mm)
• Stand -off Voltage: 2.5 V -12 V
• Peak Power up to 240 Watts @ 8 x 20 m s Pulse
• Low Leakage
• Response Time is Typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• IEC61000 -4 -2 Level 4 ESD Protection
• IEC61000 -4 -4 Level 4 EFT Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q101 Qualified and PPAP Capable
• These Devices are Pb -Free and are RoHS Compliant*

(T A = 25 C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, V F = 1.1 V Max. @ I F = 10 mA for all types)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

• Includes SZ-prefix devices where applicable.

†Surge current waveform per Figure 5.

1. VBR is measured with a pulse test current I T at an ambient temperature of 25 C.
2. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
3. ESD5Z5.0T1G shown below. Other voltages available upon request.

Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000 -4 -2

Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000 -4 -2

IEC 61000 -4 -2 Spec.

Figure 3. IEC61000 -4 -2 Spec

IEC 61000 -4 -2 Spec.

Figure 4. Diagram of ESD Test Setup

The following is taken from Application Note AND8308/D -Interpretation of Datasheet Parameters for ESD Devices.

See Application Note AND8308/D for further description of survivability specs.