CH213K
Low Dropout Ideal Diode ChipThe CH213K is a low dropout ideal diode chip from WCH. View the full CH213K datasheet below including electrical characteristics, absolute maximum ratings.
Overview
Part: CH213 — wch-ic.com
Type: Low Dropout Ideal Diode
Description: Low dropout ideal diode chip with current limiting, overcurrent, short-circuit, over-temperature, and power supply polarity protection, supporting up to 1A current at 5V with a typical 160mΩ on-resistance.
Operating Conditions:
- Supply voltage: 2.2–5.5 V
- Operating temperature: -40 to 85 °C
- Max on-current: 900 mA (at 5V)
- Current limit: 1.3 A (typical at 5V)
Absolute Maximum Ratings:
- Max supply voltage: 6.5 V (VI pin to GND)
- Max junction/storage temperature: 150 °C
Key Specs:
- Power switching tube on-resistance: Typ 160 mΩ (Iout=500mA, VI/VO=5V, TA=25°C)
- Voltage drop: Typ 32 mV (Iout=200mA, VI/VO=5V, TA=25°C)
- Quiescent operating current: Typ 3.6 μA (VI/VO=5V, TA=25°C)
- Current limit threshold: Typ 1.3 A (VI/VO=5V, TA=25°C)
- Short-circuit current: Typ 250 mA (VI/VO=5V, TA=25°C)
- Over-temperature protection threshold (rising): Typ 130 °C
- Overcurrent/short circuit protection response time: Typ 10 μS (Cload=1μF)
- Reverse conduction current: Typ 0 μA, Max 3 μA (VI/VO=5V, TA=25°C)
Features:
- Built-in power switching tube, typical 160mΩ on-resistance.
- Low turn-on voltage and low dropout single conductor, typical voltage drop of 32mV at 200mA current.
- Support maximum on-current of about 1A at 5V and current limit of about 1.3A.
- Support power supply voltage 2.2V~5.5V.
- Typical 20uS fast current limit protection in case of output over-current or output short-circuit.
- Diode chip shutdown to protect the load circuit at the output in case of input power polarity error.
- Low-power consumption, typical 4μA quiescent operating current.
- No reverse conduction current in diode chip off state.
Applications:
- Low Voltage Drop Diode Unidirectional Power Supply
- Dual Power Supply Selection for High Voltage
- Anti External Power Supply Polarity Reverse Connection
Package:
- SOT23-3
- SOT23-6
- DFN6
Electrical Characteristics
| Name | Parameter Description | Parameter Description | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VI,VO | Supply voltage (take the higher voltage among VI or VO) | Supply voltage (take the higher voltage among VI or VO) | 2.2 | 5 | 5.5 | V |
| Iq | Quiet operating current at turn-on | Quiet operating current at turn-on | 3.6 | 10 | μA | |
| Isdo | Operating current at theVO side at shutdown | Operating current at theVO side at shutdown | 2.7 | 10 | μA | |
| Isdi | Operating current at the VI side at shutdown | Operating current at the VI side at shutdown | 0 | 1 | μA | |
| Ioff | Reverse conduction current fromVO to VI at shutdown | Reverse conduction current fromVO to VI at shutdown | 0 | 3 | μA | |
| Vsw | Ideal differential pressure threshold for diode opening (VI-VO) | Ideal differential pressure threshold for diode opening (VI-VO) | 14 | mV | ||
| Ron | Power switching tube on- resistance | Iout=500mA | 120 | 160 | 240 | mΩ |
| Iout | Ideal diode on-current range | Ideal diode on-current range | 0 | 500 | 900 | mA |
| Imax | Current limit threshold, overcurrent protection current threshold | Current limit threshold, overcurrent protection current threshold | 1.05 | 1.3 | 1.6 | A |
| Vshort | VO short-circuit protection voltage threshold | VO short-circuit protection voltage threshold | 0.8 | 0.95 | 1.1 | V |
| Ishort | VO short-circuit current to ground after short- circuit protection | VO short-circuit current to ground after short- circuit protection | 180 | 250 | 330 | mA |
| Vdrmin | Ideal diode conduction minimum voltage drop | Iout=0.1mA | 2 | 15 | 30 | mV |
| Vdr100 | Voltage drop when the ideal diode is on | Iout=100mA | 6 | 20 | 40 | mV |
| Vdr200 | Voltage drop when the ideal diode is on | Iout=200mA | 16 | 32 | 57 | mV |
| Vdr300 | Voltage drop when the ideal diode is on | Iout=300mA | 28 | 48 | 80 | mV |
| Vdr500 | Voltage drop when the ideal diode is on | Iout=500mA | 52 | 80 | 130 | mV |
| Vdr1k | Voltage drop when the ideal diode is on | Iout=1000mA | 120 | 160 | 240 | mV |
| Tsd | Over-temperature protection | Rising stage | 130 | °C |
4
| threshold (with hysteresis characteristics) | Falling stage | 100 | °C | |||
|---|---|---|---|---|---|---|
| Ton | Main guide opening time | Cload=1μF | 600 | 1200 | uS | |
| Tshort | Overcurrent or short circuit protection response time | Cload=1μF | 10 | 60 | uS | |
| Rload | Resistive load range at theVO output | Resistive load range at theVO output | 5 | Ω | ||
| Cload | Capacitive load range at theVO output | Capacitive load range at theVO output | 0.0001 | 0.1~10 | 500 | μF |
Absolute Maximum Ratings
| Name | Parameter Description | Min. | Max. | Unit |
|---|---|---|---|---|
| TA | Ambient temperature at work | -40 | 85 | °C |
| TS | Ambient temperature during storage | -55 | 150 | °C |
| VI | Supply voltage of VI pin to GND pin | -6.5 | 6.5 | V |
| VO | Supply voltage ofVO pin toGND pin | -0.5 | 6.5 | V |
| VDIFF | Voltage difference between VI pin andVO pin (VI-VO) | -6.5 | 6.5 | V |
| VESD | HBMmannequin ESD tolerant voltage | 2 | V | |
| PD | Maximum power consumption of the whole chip | 400 | mW | |
| θ JAS | SOT23, SOT23-6L package thermal resistance | 220 | °C/W | |
| θ JAQ | DFN6_2x2 package thermal resistance | 140 | °C/W |
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