CH213K
Low Dropout Ideal Diode ChipThe CH213K is a low dropout ideal diode chip from WCH. View the full CH213K datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
CH213K shares its datasheet with CH213, whose page lists every part number it covers.
Official CH213K datasheet (PDF) — the source this page was extracted from.
CH213K Key Specifications
| Parameter | Value |
|---|---|
| On-Resistance (Ron) | 160mΩ typ (5V, Iout=500mA) |
| Storage Temperature | -55°C to 150°C |
| Max Power Dissipation | 400mW |
| Operating Temperature | -40°C to 85°C |
| Voltage Drop At 200mA | 32mV typ (5V) |
| Output Capacitive Load | 0.0001µF to 500µF |
| Quiescent Current (Iq) | 3.6µA typ (5V), 10µA max |
| Supply Voltage (VI/VO) | 2.2V to 5.5V |
| Overcurrent Response Time | 10µs typ (60µs max) |
| Over-Temperature Threshold | 130°C rising / 100°C falling (5V) |
| Current Limit Threshold (Imax) | 1.05A to 1.6A (1.3A typ at 5V) |
| Short-Circuit Current (Ishort) | 250mA typ (5V) |
| Ideal Diode On-Current Range (5V) | 0 to 900mA |
| Package Thermal Resistance (SOT23) | 220°C/W |
CH213K Overview
Part: CH213 — wch-ic.com
Type: Low Dropout Ideal Diode
Description: Low dropout ideal diode chip with current limiting, overcurrent, short-circuit, over-temperature, and power supply polarity protection, supporting up to 1A current at 5V with a typical 160mΩ on-resistance.
Operating Conditions:
- Supply voltage: 2.2–5.5 V
- Operating temperature: -40 to 85 °C
- Max on-current: 900 mA (at 5V)
- Current limit: 1.3 A (typical at 5V)
Absolute Maximum Ratings:
- Max supply voltage: 6.5 V (VI pin to GND)
- Max junction/storage temperature: 150 °C
Key Specs:
- Power switching tube on-resistance: Typ 160 mΩ (Iout=500mA, VI/VO=5V, TA=25°C)
- Voltage drop: Typ 32 mV (Iout=200mA, VI/VO=5V, TA=25°C)
- Quiescent operating current: Typ 3.6 μA (VI/VO=5V, TA=25°C)
- Current limit threshold: Typ 1.3 A (VI/VO=5V, TA=25°C)
- Short-circuit current: Typ 250 mA (VI/VO=5V, TA=25°C)
- Over-temperature protection threshold (rising): Typ 130 °C
- Overcurrent/short circuit protection response time: Typ 10 μS (Cload=1μF)
- Reverse conduction current: Typ 0 μA, Max 3 μA (VI/VO=5V, TA=25°C)
Features:
- Built-in power switching tube, typical 160mΩ on-resistance.
- Low turn-on voltage and low dropout single conductor, typical voltage drop of 32mV at 200mA current.
- Support maximum on-current of about 1A at 5V and current limit of about 1.3A.
- Support power supply voltage 2.2V~5.5V.
- Typical 20uS fast current limit protection in case of output over-current or output short-circuit.
- Diode chip shutdown to protect the load circuit at the output in case of input power polarity error.
- Low-power consumption, typical 4μA quiescent operating current.
- No reverse conduction current in diode chip off state.
Applications:
- Low Voltage Drop Diode Unidirectional Power Supply
- Dual Power Supply Selection for High Voltage
- Anti External Power Supply Polarity Reverse Connection
Package:
- SOT23-3
- SOT23-6
- DFN6
CH213K Pin Configuration
| Pin | Name | Type | Description |
|---|---|---|---|
| 3 | VIN,+ | Power supply | Diode anode, power input, connected to the positive voltage side of the power supply |
| 2 | VOUT,- | Power supply | Diode cathode, power output, connected load, external capacitor recommended |
| 1 | GND | Power supply | Common ground terminal, connected to the negative voltage side of the power supply |
CH213K Electrical Characteristics
| Name | Parameter Description | Parameter Description | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VI,VO | Supply voltage (take the higher voltage among VI or VO) | Supply voltage (take the higher voltage among VI or VO) | 2.2 | 5 | 5.5 | V |
| Iq | Quiet operating current at turn-on | Quiet operating current at turn-on | 3.6 | 10 | μA | |
| Isdo | Operating current at theVO side at shutdown | Operating current at theVO side at shutdown | 2.7 | 10 | μA | |
| Isdi | Operating current at the VI side at shutdown | Operating current at the VI side at shutdown | 0 | 1 | μA | |
| Ioff | Reverse conduction current fromVO to VI at shutdown | Reverse conduction current fromVO to VI at shutdown | 0 | 3 | μA | |
| Vsw | Ideal differential pressure threshold for diode opening (VI-VO) | Ideal differential pressure threshold for diode opening (VI-VO) | 14 | mV | ||
| Ron | Power switching tube on- resistance | Iout=500mA | 120 | 160 | 240 | mΩ |
| Iout | Ideal diode on-current range | Ideal diode on-current range | 0 | 500 | 900 | mA |
| Imax | Current limit threshold, overcurrent protection current threshold | Current limit threshold, overcurrent protection current threshold | 1.05 | 1.3 | 1.6 | A |
| Vshort | VO short-circuit protection voltage threshold | VO short-circuit protection voltage threshold | 0.8 | 0.95 | 1.1 | V |
| Ishort | VO short-circuit current to ground after short- circuit protection | VO short-circuit current to ground after short- circuit protection | 180 | 250 | 330 | mA |
| Vdrmin | Ideal diode conduction minimum voltage drop | Iout=0.1mA | 2 | 15 | 30 | mV |
| Vdr100 | Voltage drop when the ideal diode is on | Iout=100mA | 6 | 20 | 40 | mV |
| Vdr200 | Voltage drop when the ideal diode is on | Iout=200mA | 16 | 32 | 57 | mV |
| Vdr300 | Voltage drop when the ideal diode is on | Iout=300mA | 28 | 48 | 80 | mV |
| Vdr500 | Voltage drop when the ideal diode is on | Iout=500mA | 52 | 80 | 130 | mV |
| Vdr1k | Voltage drop when the ideal diode is on | Iout=1000mA | 120 | 160 | 240 | mV |
| Tsd | Over-temperature protection | Rising stage | 130 | °C |
4
| threshold (with hysteresis characteristics) | Falling stage | 100 | °C | |||
|---|---|---|---|---|---|---|
| Ton | Main guide opening time | Cload=1μF | 600 | 1200 | uS | |
| Tshort | Overcurrent or short circuit protection response time | Cload=1μF | 10 | 60 | uS | |
| Rload | Resistive load range at theVO output | Resistive load range at theVO output | 5 | Ω | ||
| Cload | Capacitive load range at theVO output | Capacitive load range at theVO output | 0.0001 | 0.1~10 | 500 | μF |
CH213K Absolute Maximum Ratings
| Name | Parameter Description | Min. | Max. | Unit |
|---|---|---|---|---|
| TA | Ambient temperature at work | -40 | 85 | °C |
| TS | Ambient temperature during storage | -55 | 150 | °C |
| VI | Supply voltage of VI pin to GND pin | -6.5 | 6.5 | V |
| VO | Supply voltage ofVO pin toGND pin | -0.5 | 6.5 | V |
| VDIFF | Voltage difference between VI pin andVO pin (VI-VO) | -6.5 | 6.5 | V |
| VESD | HBMmannequin ESD tolerant voltage | 2 | V | |
| PD | Maximum power consumption of the whole chip | 400 | mW | |
| θ JAS | SOT23, SOT23-6L package thermal resistance | 220 | °C/W | |
| θ JAQ | DFN6_2x2 package thermal resistance | 140 | °C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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