CH213K
3. Package
Manufacturer
WCH
Package
SOT-23-3
Overview
Part 1: Markdown Summary
Part: CH213 from WCH
Type: Low Dropout Ideal Diode Chip with Current Limiting Function
Key Specs:
- Maximum on-current: ~1A at 5V
- Current limit threshold: ~1.3A
- Supply voltage range: 2.2V~5.5V
- Typical on-resistance: 160mΩ
- Typical voltage drop: 32mV at 200mA
- Typical quiescent operating current: 4uA
- Fast current limit protection: Typical 20uS
Features:
- Built-in power switching tube, typical 160mΩ on-resistance.
- Low turn-on voltage and low dropout single conductor, typical voltage drop of 32mV at 200mA current.
- Support maximum on-current of about 1A at 5V and current limit of about 1.3A.
- Support power supply voltage 2.2V~5.5V.
- Typical 20uS fast current limit protection in case of output over-current or output short-circuit.
- Diode chip shutdown to protect the load circuit at the output in case of input power polarity error.
- Low-power consumption, typical 4uA quiescent operating current.
- No reverse conduction current in diode chip off state.
Applications:
- DC applications with no more than 1A current at 5V
- Protection of power supply systems by limiting output current during over-current conditions
- Protection of load circuits at VO output when input power supply polarity is wrong
Package:
- SOT23-3: 1.6mm width, 1.9mm spacing
- SOT23-6: 1.6mm width, 0.95mm spacing
- DFN6: 2*2mm, 0.65mm spacing
Electrical Characteristics
| Name | Parameter Descrip | otion | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VI,VO | Supply voltage (take the higher VI or VO) | er voltage among | 2.2 | 5.0 | 5.5 | V |
| Iq | Quiet operating current | at turn-on | 3.6 | 10 | uA | |
| Isdo | Operating current at the VO s | ide at shutdown | 2.7 | 10 | uA | |
| Isdi | Operating current at the VI si | ide at shutdown | 0 | 1 | uA | |
| Ioff | Reverse conduction current fi shutdown | rom VO to VI at | 0 | 3 | uA | |
| Vsw | Ideal differential pressure thro | 14 | mV | |||
| Ron | Power switching tube on- resistance | Iout=500mA | 120 | 160 | 240 | mΩ |
| Iout | Ideal diode on-current range | 0 | 500 | 900 | mA | |
| Imax | Current limit threshold, overcurrent protection current threshold | 1.05 | 1.3 | 1.6 | A | |
| Vshort | VO short-circuit protection v | oltage threshold | 0.8 | 0.95 | 1.1 | V |
| Ishort | VO short-circuit current to gre | 180 | 250 | 330 | mA | |
| Vdrmin | Ideal diode conduction minimum voltage drop | Iout=0.1mA | 2 | 15 | 30 | mV |
| Vdr100 | Iout=100mA | 6 | 20 | 40 | mV | |
| Vdr200 | 77-14 4441 | Iout=200mA | 16 | 32 | 57 | mV |
| Vdr300 | Voltage drop when the ideal | Iout=300mA | 28 | 48 | 80 | mV |
| Vdr500 | diode is on | Iout=500mA | 52 | 80 | 130 | mV |
| Vdr1k | Iout=1000mA | 120 | 160 | 240 | mV | |
| Tsd | Over-temperature protection | Rising stage | 130 | °C |
| threshold (with hysteresis characteristics) | Falling stage | 100 | °C | |||
|---|---|---|---|---|---|---|
| Ton | Main guide opening time | Cload=1uF | 600 | 1200 | uS | |
| Tshort | Overcurrent or short circuit protection response time | Cload=1uF | 10 | 60 | uS | |
| Rload | Resistive load range at the VO output | 5 | Ω | |||
| Cload | Capacitive load range at the | 0.0001 | 0.1~10 | 500 | uF |
Absolute Maximum Ratings
| Name | Parameter Description | Min. | Max. | Unit |
|---|---|---|---|---|
| TA | Ambient temperature at work | -40 | 85 | °C |
| TS | Ambient temperature during storage | -55 | 150 | °C |
| VI | Supply voltage of VI pin to GND pin | -6.5 | 6.5 | V |
| VO | Supply voltage of VO pin to GND pin | -0.5 | 6.5 | V |
| VDIFF | Voltage difference between VI pin and VO pin (VI-VO) | -6.5 | 6.5 | V |
| VESD | HBM mannequin ESD tolerant voltage | 2 | V | |
| PD | Maximum power consumption of the whole chip | 400 | mW | |
| θJAS | SOT23, SOT23-6L package thermal resistance | 220 °C/W | °C/W | |
| θJAQ | DFN6_2x2 package thermal resistance | 14 | 40 | °C/W |
Related Variants
The following components are covered by the same datasheet.
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