VMNN110CMS-TR
Infrared Emitting DiodeThe VMNN110CMS-TR is a infrared emitting diode from Stanley Electric. View the full VMNN110CMS-TR datasheet below including key specifications, absolute maximum ratings.
Official VMNN110CMS-TR datasheet (PDF) — the source this page was extracted from.
Manufacturer
Stanley Electric
Category
DiodesPackage
3-SMD, No Lead
Lifecycle
Production (Last Updated: 6 months ago)
VMNN110CMS-TR Key Specifications
| Parameter | Value |
|---|---|
| Current - DC Forward (If) (Max) | 1A |
| Grade | Automotive |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C |
| Orientation | Top View |
| Package / Case | 3-SMD, No Lead |
| Packaging | Reel |
| Qualification | AEC-Q102 |
| Radiant Intensity (Ie) Min @ If | 890mW/sr @ 1A |
| RoHS | Compliant |
| Standard Pack Qty | 4000 |
| Type | Infrared (IR) |
| Viewing Angle | 45° |
| Forward Voltage (Vf) | 2.9V |
| Wavelength | 945nm (925nm ~ 955nm) |
VMNN110CMS-TR Overview
Part: VMNN110CMS-TR — Stanley Electric
Type: Infrared Emitting Diode (IRED)
Description: 945 nm AlGaAs infrared emitting diode with integrated dome lens delivering 1,160 mW/sr typical radiant intensity at 1 A forward current.
Operating Conditions:
- Operating temperature: -40 to +125 °C
Absolute Maximum Ratings:
- Max continuous current: 1.0 A
- Pulse forward current (tw ≦ 100 μsec, duty ≦ 1%): 5.0 A
- Reverse voltage: 5.0 V
- Electrostatic discharge threshold (HBM, Ta = 25 °C): 2.0 kV
- Max junction/storage temperature: 145 °C (Tj) / 125 °C (Tstg)
- Peak reflow soldering temperature: 260 °C
Key Specs:
- Peak wavelength: 945 nm typ. (925 nm min, 955 nm max, IF = 1 A)
- Radiant intensity: 1,160 mW/sr typ. (890 mW/sr min, 1,600 mW/sr max, IF = 1 A, Ta = 25 °C)
- Total radiant flux: 1,700 mW typ. (IF = 1 A, Ta = 25 °C)
- Forward voltage: 2.9 V typ. (2.3 V min, 3.3 V max, IF = 1 A, Ta = 25 °C)
- Half intensity angle: 45 deg. (2θ 1/2)
- Spectral bandwidth at 50% of Imax: 40 nm (IF = 1 A, Ta = 25 °C)
- Reverse current: 5 μA max (VR = 5 V, Ta = 25 °C)
- Thermal resistance (junction to soldering point): 5 °C/W typ., 7 °C/W max
Features:
- Narrow distribution angle with dome lens
- AlGaAs die material with transparent and colorless silicone encapsulant
- AEC-Q102 compliant
- Classified "Exempt" according to IEC62471 photobiological safety
- Lead-free soldering compatible, RoHS compliant
- Moisture sensitivity level: MSL 2a (IPC/JEDEC J-STD-020D)
Applications:
- Automotive Advanced Driver Assistance Systems (driver monitoring, occupant monitoring, gesture control)
- Light source for surveillance cameras
- Time of Flight (ToF) sensors
- Security equipment
Package:
- Surface mount package (3.8 × 3.8 × 3.2 mm)
VMNN110CMS-TR Applications
- ・ Automotive use : Advanced Driver Assistance System : driver monitoring system, occupant monitoring system, gesture control, etc.
- ・ Light source for surveillance camera
- ・ Other use (TOF (Time Of Flight) sensor, Security equipment) etc.
VMNN110CMS-TR Absolute Maximum Ratings
| Item | Symbol | Maximum ratings | Units |
|---|---|---|---|
| Operating temperature | T opr | - 40 to +125 | °C |
| Storage temperature | T stg | - 40 to +125 | °C |
| Junction temperature | Tj | 145 | °C |
| Forward current | I F | 1.0 | A |
| Pulse forward current(tw ≦ 100μsec, duty ≦ 1%) | I FRM | 5.0 | A |
| Reverse voltage | V R | 5.0 | V |
| Electrostatic discharge threshold "HBM"(Ta=25 °C ) | V R | 2.0 | kV |
| Peak temperature of reflow soldering | T sld | 260 | °C |
Note 2 ESD testing method : EIAJ4701/300(304) Human Body Model(HBM) 1.5kΩ,100pF
VMNN110CMS-TR Thermal Information
(Ta=25 °C )
| Item | Symbol | Typ. | Max. | Units |
|---|---|---|---|---|
| Thermal resistance(Junction - Soldering Point) | R th(j-s) | 5 | 7 | °C /W |
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