USBLC6-2SC6
ESD Protection DeviceThe USBLC6-2SC6 is a esd protection device from STMicroelectronics. View the full USBLC6-2SC6 datasheet below including key specifications, electrical characteristics.
Official USBLC6-2SC6 datasheet (PDF) — the source this page was extracted from.
USBLC6-2SC6 Key Specifications
| Parameter | Value |
|---|---|
| Applications | USB |
| Capacitance @ Frequency | 0.8pF @ 1MHz |
| Current - Peak Pulse (10/1000µs) | 5A (8/20µs) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | SOT-23-6 |
| Packaging | MouseReel |
| Packaging | MouseReel |
| Power - Peak Pulse | 78W |
| Power Line Protection | Yes |
| Standard Pack Qty | 3000 |
| Standard Pack Qty | 3000 |
| Supplier Device Package | SOT-23-6 |
| Type | Steering (Rail to Rail) |
| Unidirectional Channels | 2 |
| Voltage - Breakdown (Min) | 6V |
| Voltage - Clamping (Max) @ Ipp | 17V |
| Voltage - Reverse Standoff (Typ) | 5.25V |
USBLC6-2SC6 Overview
Part: USBLC6-2SC6, USBLC6-2P6 by STMicroelectronics
Type: Very Low Capacitance ESD Protection Diode Array
Description: A monolithic Application Specific Device providing ESD protection for two data lines and VBUS on high-speed interfaces like USB2.0 and Ethernet, featuring very low capacitance (3.5 pF max) and very low leakage current (1 μA max), compliant with IEC61000-4-2 level 4.
Operating Conditions:
- Supply voltage: Designed for lines up to 5 V (reverse stand-off voltage)
- Operating temperature: Max junction temperature 125 °C
- Max I/O capacitance: 3.5 pF
Absolute Maximum Ratings:
- Max peak pulse voltage (air discharge): 15 kV
- Max peak pulse voltage (contact discharge): 15 kV
- Max junction temperature: 125 °C
- Max storage temperature: -55 to +150 °C
Key Specs:
- Reverse stand-off voltage (V_RM): 5 V
- Leakage current (I_RM) at V_RM = 5V: 1 μA max
- Breakdown voltage (V_BR) between V_BUS and GND at I_F = 1mA: 6 V min
- Clamping voltage (V_CL) at I_PP = 1A (8/20μs): 12 V max
- Clamping voltage (V_CL) at I_PP = 5A (8/20μs): 17 V max
- Capacitance between I/O and GND (C_i/o-GND) at V=0V, F=1MHz: 2.5 pF typ, 3.5 pF max
- Capacitance between I/O (C_i/o-i/o) at V=0V, F=1MHz: 1.2 pF typ, 1.7 pF max
- Capacitance matching tolerance (∆C_i/o-GND): 0.04 pF max
Features:
- 2 data lines protection
- Protects V_BUS
- Very low capacitance: 3.5pF max
- Very low leakage current: 1μA max
- SOT-666 and SOT23-6L packages
- RoHS compliant
Applications:
- USB2.0 ports at 480Mbps (high speed) and USB OTG ports
- Backwards Compatible with USB1.1 Low and full speed
- Ethernet port: 10/100Mb/s
- SIM card protection
- Video line protection
- Portable and mobile electronics
Package:
- SOT23-6L
- SOT-666
USBLC6-2SC6 Features
- ■ 2 data lines protection
- ■ Protects V BUS
- ■ Very low capacitance: 3.5pF max
- ■ Very low leakage current: 1μA max
- ■ SOT-666 and SOT23-6L packages
- ■ RoHS compliant
USBLC6-2SC6 Applications
- ■ USB2.0 ports at 480Mbps (high speed) and USB OTG ports
- ■ Backwards Compatible with USB1.1 Low and full speed
- ■ Ethernet port: 10/100Mb/s
- ■ SIM card protection
- ■ Video line protection
- ■ Portable and mobile electronics
USBLC6-2SC6 Electrical Characteristics
| Symbol | Parameter | Test Conditions | Value | Value | Value | Unit |
|---|---|---|---|---|---|---|
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| V RM | Reverse stand-off voltage | 5 | V | |||
| I RM | Leakage current | V RM = 5V | 1 | μA | ||
| V BR | Breakdown voltage between V BUS and GND | I F = 1mA | 6 | V | ||
| V F | Forward voltage | I F = 10mA | 1.1 | V | ||
| V CL | Clamping voltage | I PP = 1A, t p = 8/20μs Any I/O pin to GND | 12 | V | ||
| V CL | Clamping voltage | I PP = 5A, t p = 8/20μs Any I/O pin to GND | 17 | V | ||
| C i/o-GND | Capacitance between I/O and GND | V = 0V F = 1MHz any I/O pin to GND | 2.5 | 3.5 | pF | |
| ∆ C i/o-GND | 0.04 | pF | ||||
| C i/o-i/o | Capacitance between I/O | V = 0V F = 1MHz between I/O, GND not connected | 1.2 | 1.7 | pF | |
| ∆ C i/o-i/o | 0.04 | pF |
Figure 2: Capacitance versus line voltage (typical values)
Figure 4: Relative variation of leakage current versus junction temperature (typical values)
Figure 3: Line capacitance versus frequency (typical values)
Figure 5: Frequency response
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All Diodes datasheetsAll STMicroelectronics datasheets (808)
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