USBLC6-2

ESD Protection Device

The USBLC6-2 is a esd protection device from STMicroelectronics. View the full USBLC6-2 datasheet below including key specifications, electrical characteristics.

USBLC6-2 shares its datasheet with USBLC6-2SC6, whose page lists every part number it covers.

Official USBLC6-2 datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

USBLC6-2 Key Specifications

Parameter	Value
Reverse stand-off voltage (V_RM)	5 V
Leakage current (I_RM) at V_RM = 5V	1 μA max
Breakdown voltage (V_BR) between V_BUS and GND at I_F = 1mA	6 V min
Clamping voltage (V_CL) at I_PP = 1A (8/20μs)	12 V max
Clamping voltage (V_CL) at I_PP = 5A (8/20μs)	17 V max
Capacitance between I/O and GND (C_i/o-GND) at V=0V, F=1MHz	2.5 pF typ, 3.5 pF max
Capacitance between I/O (C_i/o-i/o) at V=0V, F=1MHz	1.2 pF typ, 1.7 pF max
Capacitance matching tolerance (∆C_i/o-GND)	0.04 pF max

USBLC6-2 Overview

Part: USBLC6-2SC6, USBLC6-2P6 by STMicroelectronics

Type: Very Low Capacitance ESD Protection Diode Array

Description: A monolithic Application Specific Device providing ESD protection for two data lines and VBUS on high-speed interfaces like USB2.0 and Ethernet, featuring very low capacitance (3.5 pF max) and very low leakage current (1 μA max), compliant with IEC61000-4-2 level 4.

Operating Conditions:

Supply voltage: Designed for lines up to 5 V (reverse stand-off voltage)
Operating temperature: Max junction temperature 125 °C
Max I/O capacitance: 3.5 pF

Absolute Maximum Ratings:

Max peak pulse voltage (air discharge): 15 kV
Max peak pulse voltage (contact discharge): 15 kV
Max junction temperature: 125 °C
Max storage temperature: -55 to +150 °C

Key Specs:

Reverse stand-off voltage (V_RM): 5 V
Leakage current (I_RM) at V_RM = 5V: 1 μA max
Breakdown voltage (V_BR) between V_BUS and GND at I_F = 1mA: 6 V min
Clamping voltage (V_CL) at I_PP = 1A (8/20μs): 12 V max
Clamping voltage (V_CL) at I_PP = 5A (8/20μs): 17 V max
Capacitance between I/O and GND (C_i/o-GND) at V=0V, F=1MHz: 2.5 pF typ, 3.5 pF max
Capacitance between I/O (C_i/o-i/o) at V=0V, F=1MHz: 1.2 pF typ, 1.7 pF max
Capacitance matching tolerance (∆C_i/o-GND): 0.04 pF max

Features:

2 data lines protection
Protects V_BUS
Very low capacitance: 3.5pF max
Very low leakage current: 1μA max
SOT-666 and SOT23-6L packages
RoHS compliant

Applications:

USB2.0 ports at 480Mbps (high speed) and USB OTG ports
Backwards Compatible with USB1.1 Low and full speed
Ethernet port: 10/100Mb/s
SIM card protection
Video line protection
Portable and mobile electronics

Package:

SOT23-6L
SOT-666

USBLC6-2 Features

■ 2 data lines protection
■ Protects V BUS
■ Very low capacitance: 3.5pF max
■ Very low leakage current: 1μA max
■ SOT-666 and SOT23-6L packages
■ RoHS compliant

USBLC6-2 Applications

■ USB2.0 ports at 480Mbps (high speed) and USB OTG ports
■ Backwards Compatible with USB1.1 Low and full speed
■ Ethernet port: 10/100Mb/s
■ SIM card protection
■ Video line protection
■ Portable and mobile electronics

USBLC6-2 Electrical Characteristics

Symbol	Parameter	Test Conditions	Value	Value	Value	Unit
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V RM	Reverse stand-off voltage				5	V
I RM	Leakage current	V RM = 5V			1	μA
V BR	Breakdown voltage between V BUS and GND	I F = 1mA	6			V
V F	Forward voltage	I F = 10mA			1.1	V
V CL	Clamping voltage	I PP = 1A, t p = 8/20μs Any I/O pin to GND			12	V
V CL	Clamping voltage	I PP = 5A, t p = 8/20μs Any I/O pin to GND			17	V
C i/o-GND	Capacitance between I/O and GND	V = 0V F = 1MHz any I/O pin to GND		2.5	3.5	pF
∆ C i/o-GND					0.04	pF
C i/o-i/o	Capacitance between I/O	V = 0V F = 1MHz between I/O, GND not connected		1.2	1.7	pF
∆ C i/o-i/o					0.04	pF

Figure 2: Capacitance versus line voltage (typical values)

Figure 4: Relative variation of leakage current versus junction temperature (typical values)

Figure 3: Line capacitance versus frequency (typical values)

Figure 5: Frequency response

More datasheets

All STMicroelectronics datasheets (808)

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