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USBLC6-2P6

ESD Protection Device

The USBLC6-2P6 is a esd protection device from STMicroelectronics. View the full USBLC6-2P6 datasheet below including key specifications, pinout, electrical characteristics.

USBLC6-2P6 shares its datasheet with USBLC6-2SC6, whose page lists every part number it covers.

Official USBLC6-2P6 datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

Category

ESD Protection Device

Package

SOT-563, SOT-666

USBLC6-2P6 Key Specifications

ParameterValue
ApplicationsUSB
Current - Peak Pulse (10/1000µs)5A (8/20µs)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Package / CaseSOT-563, SOT-666
PackagingMouseReel
Power Line ProtectionYes
Standard Pack Qty3000
Supplier Device PackageSOT-666
TypeSteering (Rail to Rail)
Unidirectional Channels2
Voltage - Breakdown (Min)6V
Voltage - Clamping (Max) @ Ipp17V
Voltage - Reverse Standoff (Typ)5.25V

USBLC6-2P6 Overview

Part: USBLC6-2SC6, USBLC6-2P6 by STMicroelectronics

Type: Very Low Capacitance ESD Protection Diode Array

Description: A monolithic Application Specific Device providing ESD protection for two data lines and VBUS on high-speed interfaces like USB2.0 and Ethernet, featuring very low capacitance (3.5 pF max) and very low leakage current (1 μA max), compliant with IEC61000-4-2 level 4.

Operating Conditions:

  • Supply voltage: Designed for lines up to 5 V (reverse stand-off voltage)
  • Operating temperature: Max junction temperature 125 °C
  • Max I/O capacitance: 3.5 pF

Absolute Maximum Ratings:

  • Max peak pulse voltage (air discharge): 15 kV
  • Max peak pulse voltage (contact discharge): 15 kV
  • Max junction temperature: 125 °C
  • Max storage temperature: -55 to +150 °C

Key Specs:

  • Reverse stand-off voltage (V_RM): 5 V
  • Leakage current (I_RM) at V_RM = 5V: 1 μA max
  • Breakdown voltage (V_BR) between V_BUS and GND at I_F = 1mA: 6 V min
  • Clamping voltage (V_CL) at I_PP = 1A (8/20μs): 12 V max
  • Clamping voltage (V_CL) at I_PP = 5A (8/20μs): 17 V max
  • Capacitance between I/O and GND (C_i/o-GND) at V=0V, F=1MHz: 2.5 pF typ, 3.5 pF max
  • Capacitance between I/O (C_i/o-i/o) at V=0V, F=1MHz: 1.2 pF typ, 1.7 pF max
  • Capacitance matching tolerance (∆C_i/o-GND): 0.04 pF max

Features:

  • 2 data lines protection
  • Protects V_BUS
  • Very low capacitance: 3.5pF max
  • Very low leakage current: 1μA max
  • SOT-666 and SOT23-6L packages
  • RoHS compliant

Applications:

  • USB2.0 ports at 480Mbps (high speed) and USB OTG ports
  • Backwards Compatible with USB1.1 Low and full speed
  • Ethernet port: 10/100Mb/s
  • SIM card protection
  • Video line protection
  • Portable and mobile electronics

Package:

  • SOT23-6L
  • SOT-666

USBLC6-2P6 Features

  • ■ 2 data lines protection
  • ■ Protects V BUS
  • ■ Very low capacitance: 3.5pF max
  • ■ Very low leakage current: 1μA max
  • ■ SOT-666 and SOT23-6L packages
  • ■ RoHS compliant

USBLC6-2P6 Applications

  • ■ USB2.0 ports at 480Mbps (high speed) and USB OTG ports
  • ■ Backwards Compatible with USB1.1 Low and full speed
  • ■ Ethernet port: 10/100Mb/s
  • ■ SIM card protection
  • ■ Video line protection
  • ■ Portable and mobile electronics

USBLC6-2P6 Pin Configuration

USBLC6-2P6 Pinout

Package: SOT-666 (6-pin)

Pin NumberPin NameTypeDescription
1D+I/OUSB Data+ line / High-speed data line
2GNDPGround
3D-I/OUSB Data- line / High-speed data line
4GNDPGround
5VBUSI/OUSB Power supply line (5V)
6GNDPGround

Notes

  • Pin count: 6 pins in SOT-666 package (2.9 mm² max)
  • Functional design: Rail-to-rail ESD protection topology with integrated diodes protecting D+, D-, and VBUS lines to ground
  • Capacitance: Very low line capacitance (3.5 pF max I/O-to-GND) ensures USB 2.0 compliance (<1 pF requirement) and signal integrity
  • ESD rating: IEC61000-4-2 Level 4 compliant (15 kV air discharge, 8 kV contact discharge)
  • Multiple GND pins: Pins 2, 4, and 6 are all connected to ground for optimal current distribution during ESD events
  • VBUS protection: Pin 5 includes ESD protection and allows ESD current to flow to ground during surge events

USBLC6-2P6 Electrical Characteristics

SymbolParameterTest ConditionsValueValueValueUnit
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V RMReverse stand-off voltage5V
I RMLeakage currentV RM = 5V1μA
V BRBreakdown voltage between V BUS and GNDI F = 1mA6V
V FForward voltageI F = 10mA1.1V
V CLClamping voltageI PP = 1A, t p = 8/20μs Any I/O pin to GND12V
V CLClamping voltageI PP = 5A, t p = 8/20μs Any I/O pin to GND17V
C i/o-GNDCapacitance between I/O and GNDV = 0V F = 1MHz any I/O pin to GND2.53.5pF
∆ C i/o-GND0.04pF
C i/o-i/oCapacitance between I/OV = 0V F = 1MHz between I/O, GND not connected1.21.7pF
∆ C i/o-i/o0.04pF

Figure 2: Capacitance versus line voltage (typical values)

Figure 4: Relative variation of leakage current versus junction temperature (typical values)

Figure 3: Line capacitance versus frequency (typical values)

Figure 5: Frequency response

More datasheets

All STMicroelectronics datasheets (808)

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