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PMEG4010CEJ

Schottky Barrier Rectifier

The PMEG4010CEJ is a schottky barrier rectifier from Nexperia. View the full PMEG4010CEJ datasheet below including key specifications, pinout.

PMEG4010CEJ shares its datasheet with PMEG4010CE, whose page lists every part number it covers.

Official PMEG4010CEJ datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

SOD323F, SC-90

PMEG4010CEJ Key Specifications

ParameterValue
Forward Current (IF)1 A
Reverse Voltage (VR)40 V
Diode Capacitance (Cd)69 pF (typ) to 77 pF (max) at 1V, 1MHz
Junction Temperature (Tj)150 °C
Forward Voltage (VF) At 1A490 mV (typ) to 570 mV (max)
Reverse Current (IR) At 40V6 µA (typ) to 50 µA (max)
Total Power Dissipation (Ptot)350 mW (at Tamb=25°C)
Operating Temperature Range (Tamb)-65 °C to +150 °C
Non-Repetitive Peak Forward Current (IFSM)10 A

PMEG4010CEJ Overview

Part: PMEG4010CEJ — Nexperia

Type: MEGA Schottky barrier rectifier

Description: A Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with 1 A forward current, 40 V reverse voltage, and very low forward voltage, encapsulated in small and flat lead SMD plastic packages.

Operating Conditions:

  • Operating temperature: -65 to +150 °C
  • Forward current: up to 1 A (T_sp ≤ 55 °C)
  • Reverse voltage: up to 40 V

Absolute Maximum Ratings:

  • Max reverse voltage: 40 V
  • Max forward current: 1 A (T_sp ≤ 55 °C)
  • Max repetitive peak forward current: 7 A (t_p ≤ 1 ms; d ≤ 0.25)
  • Max non-repetitive peak forward current: 10 A (square wave; t_p = 8 ms) for PMEG4010CEJ
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Forward voltage (V_F): 490 mV (Typ) / 570 mV (Max) at I_F = 1 A (T_amb = 25 °C)
  • Forward voltage (V_F): 210 mV (Typ) / 240 mV (Max) at I_F = 1 mA (T_amb = 25 °C)
  • Reverse current (I_R): 6 μA (Typ) / 50 μA (Max) at V_R = 40 V (T_amb = 25 °C)
  • Reverse current (I_R): 0.8 μA (Typ) at V_R = 5 V (T_amb = 25 °C)
  • Diode capacitance (C_d): 69 pF (Typ) / 77 pF (Max) at V_R = 1 V, f = 1 MHz (T_amb = 25 °C)

Features:

  • Forward current: I_F ≤ 1 A
  • Reverse voltage: V_R ≤ 40 V
  • Very low forward voltage
  • Small and flat lead SMD plastic packages

Applications:

  • Low voltage rectification
  • High efficiency DC-to-DC conversion
  • Switch mode power supply
  • Reverse polarity protection
  • Low power consumption applications

Package:

  • SOD323F (SC-90)
  • SOD123F

PMEG4010CEJ Features

  • n Forward current: IF £ 1 A

  • n

  • Reverse voltage: VR £ 40 V

  • n Very low forward voltage

  • n Small and flat lead SMD plastic packages

PMEG4010CEJ Applications

  • n Low voltage rectification
  • n High efficiency DC-to-DC conversion
  • n Switch mode power supply
  • n Reverse polarity protection
  • n Low power consumption applications

PMEG4010CEJ Pin Configuration

PMEG4010CEJ — SOD323F (SC-90)

Pin NumberPin NameTypeDescription
1cathode–Cathode terminal
2anode–Anode terminal

Notes

  • Package: SOD323F (SC-90) — 2-lead surface-mounted diode package
  • Device type: Schottky barrier rectifier (single diode)
  • Marking code: EP
  • Pin identification: Pin 1 (cathode) is marked on the package outline; Pin 2 (anode) is the opposite lead

PMEG4010CEJ Thermal Information

Table 7.Thermal characteristics
SymbolParameter
R th(j-a)thermal resistance from junction to ambient
PMEG4010CEH
PMEG4010CEJ
R th(j-sp)thermal resistance from junction to solder point
PMEG4010CEH
PMEG4010CEJ

PMEG4010CEJ Package Information

Fig 5. Package outline SOD123F

PMEG4010CEJ Ordering Information

No ordering information found in the provided text.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
PMEG4010CENexperia—
PMEG4010CEHNexperiaSOD123F

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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