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PMEG4010CEH

Schottky Barrier Rectifier

The PMEG4010CEH is a schottky barrier rectifier from Nexperia. View the full PMEG4010CEH datasheet below including key specifications.

PMEG4010CEH shares its datasheet with PMEG4010CE, whose page lists every part number it covers.

Official PMEG4010CEH datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

SOD123F

PMEG4010CEH Key Specifications

ParameterValue
Pin Count2 (cathode, anode)
Marking CodeC9
Forward Current (IF)1 A (Tsp ≤ 55 °C)
Reverse Voltage (VR)40 V
Diode Capacitance (Cd)69 pF typ, 77 pF max (VR = 1 V, f = 1 MHz)
Junction Temperature (Tj)150 °C max
Storage Temperature Range-65 °C to +150 °C
Forward Voltage (VF) At 1 A490 mV typ, 570 mV max
Operating Temperature Range-65 °C to +150 °C
Forward Voltage (VF) At 1 MA210 mV typ, 240 mV max
Total Power Dissipation (Ptot)375 mW (Tamb ≤ 25 °C)
Reverse Current (IR) At VR = 40 V6 µA typ, 50 µA max
Repetitive Peak Forward Current (IFRM)7 A (tp ≤ 1 ms; δ ≤ 0.25)
Non-Repetitive Peak Forward Current (IFSM)9 A (square wave, tp = 8 ms)

PMEG4010CEH Overview

Part: PMEG4010CEJ — Nexperia

Type: MEGA Schottky barrier rectifier

Description: A Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with 1 A forward current, 40 V reverse voltage, and very low forward voltage, encapsulated in small and flat lead SMD plastic packages.

Operating Conditions:

  • Operating temperature: -65 to +150 °C
  • Forward current: up to 1 A (T_sp ≤ 55 °C)
  • Reverse voltage: up to 40 V

Absolute Maximum Ratings:

  • Max reverse voltage: 40 V
  • Max forward current: 1 A (T_sp ≤ 55 °C)
  • Max repetitive peak forward current: 7 A (t_p ≤ 1 ms; d ≤ 0.25)
  • Max non-repetitive peak forward current: 10 A (square wave; t_p = 8 ms) for PMEG4010CEJ
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Forward voltage (V_F): 490 mV (Typ) / 570 mV (Max) at I_F = 1 A (T_amb = 25 °C)
  • Forward voltage (V_F): 210 mV (Typ) / 240 mV (Max) at I_F = 1 mA (T_amb = 25 °C)
  • Reverse current (I_R): 6 μA (Typ) / 50 μA (Max) at V_R = 40 V (T_amb = 25 °C)
  • Reverse current (I_R): 0.8 μA (Typ) at V_R = 5 V (T_amb = 25 °C)
  • Diode capacitance (C_d): 69 pF (Typ) / 77 pF (Max) at V_R = 1 V, f = 1 MHz (T_amb = 25 °C)

Features:

  • Forward current: I_F ≤ 1 A
  • Reverse voltage: V_R ≤ 40 V
  • Very low forward voltage
  • Small and flat lead SMD plastic packages

Applications:

  • Low voltage rectification
  • High efficiency DC-to-DC conversion
  • Switch mode power supply
  • Reverse polarity protection
  • Low power consumption applications

Package:

  • SOD323F (SC-90)
  • SOD123F

PMEG4010CEH Features

  • n Forward current: IF £ 1 A

  • n

  • Reverse voltage: VR £ 40 V

  • n Very low forward voltage

  • n Small and flat lead SMD plastic packages

PMEG4010CEH Applications

  • n Low voltage rectification
  • n High efficiency DC-to-DC conversion
  • n Switch mode power supply
  • n Reverse polarity protection
  • n Low power consumption applications

PMEG4010CEH Thermal Information

Table 7.Thermal characteristics
SymbolParameter
R th(j-a)thermal resistance from junction to ambient
PMEG4010CEH
PMEG4010CEJ
R th(j-sp)thermal resistance from junction to solder point
PMEG4010CEH
PMEG4010CEJ

PMEG4010CEH Package Information

Fig 5. Package outline SOD123F

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
PMEG4010CENexperia—
PMEG4010CEJNexperiaSOD323F

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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