BSD3A311V
ESD Protection DiodeThe BSD3A311V is a esd protection diode from Brightking. View the full BSD3A311V datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Official BSD3A311V datasheet (PDF) — the source this page was extracted from.
BSD3A311V Key Specifications
| Parameter | Value |
|---|---|
| Configuration | Unidirectional |
| Package Dimensions | 2.5-2.7mm x 1.2-1.4mm (SOD323) |
| EFT (IEC 61000-4-4) | 40 A (5/50ns) |
| Storage Temperature | -55°C to +150°C |
| Junction Capacitance | 45 pF max (38 pF typ) at VR=0V, 1MHz |
| Junction Temperature | -55°C to +150°C |
| Clamping Voltage (VC) | 48 V max (44 V typ) at IPP=5A, 8/20us |
| Surge (IEC 61000-4-5) | 5 A (8/20us) |
| Reverse Leakage Current | 0.5 uA max at VRWM=30V |
| Peak Pulse Power (8/20us) | 220 W |
| Lead Soldering Temperature | 260°C for 10 s |
| Peak Pulse Current (8/20us) | 5 A |
| ESD Protection (IEC 61000-4-2) | ±25 kV contact, ±25 kV air |
| Reverse Breakdown Voltage (VBR) | 31.5 V to 36 V (34 V typ) at IT=1mA |
| Reverse Stand-Off Voltage (VRWM) | 30 V max |
BSD3A311V Overview
Part: BSD3A311V
Type: TVS Diode
Description: 220 Watts peak pulse power TVS diode with 30 V reverse stand-off voltage and 5 A peak pulse current, designed for ESD and surge protection.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Reverse stand-off voltage: 30.0 V
Absolute Maximum Ratings:
- Max peak pulse power (t p =8/20μs): 220 Watts
- Max peak pulse current (t p =8/20μs): 5 A
- Max ESD per IEC 61000-4-2 (Air/Contact): 25 kV
- Max junction/storage temperature: 150 °C
Key Specs:
- Reverse Stand-Off Voltage (V RWM): 30.0 V (max)
- Reverse Breakdown Voltage (V BR): 31.5 V (min) to 36.0 V (max) at I T =1mA
- Reverse Leakage Current (I R): 0.5 μA (max) at V RWM = 30 V, T=25 °C
- Clamping Voltage (V C): 44 V (typical), 48 V (max) at I PP = 5 A, t p =8/20μs
- Junction Capacitance (C j): 38 pF (typical), 45 pF (max) at V R = 0V, f = 1MHz
Features:
- 220 Watts peak pulse power (tp = 8/20μs)
- Unidirectional configurations
- Solid-state silicon-avalanche technology
- Low clamping voltage
- Low leakage current
- IEC 61000-4-2 ± 25 kV contact ± 25 kV air
- IEC 61000-4-4 (EFT) 40A(5/50ns)
- IEC 61000-4-5 (Lightning) 5 A(8/20μs)
Applications:
- USB Vbus
- Power Line
- Power management
Package:
- SOD323
BSD3A311V Features
- ■ 22 0Watts peak pulse power (tp = 8/20μs)
- ■ Unidirectional configurations
- ■ Solid-state silicon-avalanche technology
- ■ Low clamping voltage
- ■ Low leakage current
- ■ IEC 61000-4-2 ± 25 kV contact ± 25 kV air
- ■ IEC 61000-4-4 (EFT) 40A(5/50ns)
- ■ IEC 61000-4-5 (Lightning) 5 A(8/20μs)
BSD3A311V Pin Configuration
| Pin | Name | Type | Description |
|---|---|---|---|
| 1 | A | P | Anode |
| 2 | K | P | Cathode |
BSD3A311V Electrical Characteristics
| Parameter | Symbol | Conditions | Min | Typical | Max | Units |
|---|---|---|---|---|---|---|
| Reverse Stand-Off Voltage | V RWM | 30 .0 | V | |||
| Reverse Breakdown Voltage | V BR | I T =1mA | 31.5 | 34 | 36.0 | V |
| Reverse Leakage Current | I R | V RWM = 30 V,T=25 °C | 0.5 | μA | ||
| Clamping Voltage | V C | I PP = 5 A,t p =8/20μs | 44 | 4 8 | V | |
| Junction Capacitance | C j | V R = 0V, f = 1MHz | 38 | 45 | pF |
BSD3A311V Absolute Maximum Ratings
| Rating | Symbol | Value | Units |
|---|---|---|---|
| Peak Pulse Power ( t p =8/20μs) | P PP | 2 2 0 | Watts |
| Peak Pulse Current ( t p =8/20μs ) | I pp | 5 | A |
| ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) | V ESD | 25 25 | kV |
| Lead Soldering Temperature | T L | 260(10seconds) | °C |
| Junction Temperature | T J | -55 to + 150 | °C |
| Storage Temperature | T stg | -55 to + 150 | °C |
BSD3A311V Package Information
- ■ SOD323 package
- ■ Molding compound flammability rating: UL94V-0
- ■ Packaging: Tape and Reel
- ■ RoHS/WEEE Compliant
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- CH213K – WCH, Low Dropout Ideal Diode Chip
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Ask your AI agent about the BSD3A311V
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the BSD3A311V run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.