SS34HE
Schottky Barrier RectifierThe SS34HE is a schottky barrier rectifier from Vishay Intertechnology. View the full SS34HE datasheet below including key specifications, pinout.
Official SS34HE datasheet (PDF) — the source this page was extracted from.
SS34HE Key Specifications
| Parameter | Value |
|---|---|
| DV/Dt | 10000 V/μs |
| Qualification | AEC-Q101 |
| Device Marking Code | S4 |
| Storage Temperature Range | -55 °C to +150 °C |
| Maximum RMS Voltage (VRMS) | 28 V |
| Forward Voltage (VF) At 3.0 A | 0.5 V |
| Reverse Current (IR) At 25 °C | 0.5 mA |
| Reverse Current (IR) At 100 °C | 20 mA |
| Maximum DC Blocking Voltage (VDC) | 40 V |
| Peak Forward Surge Current (IFSM) | 100 A |
| Operating Junction Temperature Range | -55 °C to +125 °C |
| Non-Repetitive Avalanche Energy (EAS) | 20 mJ |
| Average Forward Rectified Current (IF(AV)) | 3.0 A |
| Thermal Resistance Junction-To-Lead (RθJL) | 17 °C/W |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 40 V |
| Thermal Resistance Junction-To-Ambient (RθJA) | 55 °C/W |
SS34HE Overview
Part: SS3x Series — Vishay General Semiconductor
Type: Surface Mount Schottky Barrier Rectifier
Description: 3.0 A, 20-60 V surface mount Schottky barrier rectifier with low forward voltage drop, high surge capability, and low power losses.
Operating Conditions:
- DC blocking voltage: 20–60 V
- Operating junction temperature: -55 to +150 °C
- Average forward rectified current: 3.0 A
Absolute Maximum Ratings:
- Max repetitive peak reverse voltage: 60 V
- Max average forward rectified current: 3.0 A
- Max junction temperature: +150 °C
- Max storage temperature: -55 to +150 °C
Key Specs:
- Maximum average forward rectified current (I_F(AV)): 3.0 A
- Maximum repetitive peak reverse voltage (V_RRM): 20 V, 30 V, 40 V, 50 V, 60 V
- Peak forward surge current (I_FSM): 100 A (8.3 ms single half sine-wave)
- Maximum instantaneous forward voltage (V_F): 0.5 V (at 3.0 A for SS33), 0.75 V (at 3.0 A for SS35)
- Maximum DC reverse current (I_R): 0.5 mA (at T_A = 25 °C), 20 mA (at T_A = 100 °C for SS33), 10 mA (at T_A = 100 °C for SS35)
- Non-repetitive avalanche energy (E_AS): 20 mJ (at T_A = 25 °C, I_AS = 2.0 A, L = 10 mH)
- Voltage rate of change (dV/dt): 10 000 V/μs (rated V_R)
- Typical thermal resistance (R_θJA): 55 °C/W (PCB mounted)
Features:
- Low profile package
- Ideal for automated placement
- Guardring for overvoltage protection
- Low power losses, high efficiency
- Low forward voltage drop
- High surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
Applications:
- Low voltage high frequency inverters
- Freewheeling
- DC/DC converters
- Polarity protection applications
Package:
- DO-214AB (SMC)
SS34HE Features
- Low profile package
- Ideal for automated placement
- Guardring for overvoltage protection
- Low power losses, high efficiency
- Low forward voltage drop
- High surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
SS34HE Applications
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
SS34HE Pin Configuration
| Pin | Name | Type | Description |
|---|---|---|---|
| 1 | A | P | Anode |
| 2 | K | P | Cathode |
SS34HE Typical Application
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
SS34HE Package Information
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 -RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ('_X' denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
| MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) | MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) | MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) | MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) | MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) | MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) | MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) | MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) |
|---|---|---|---|---|---|---|---|
| PARAMETER | SYMBOL | SS32 | SS33 | SS34 | SS35 | SS36 | UNIT |
| Device marking code | S2 | S3 | S4 | S5 | S6 | ||
| Maximum repetitive peak reverse voltage | V RRM | 20 | 30 | 40 | 50 | 60 | V |
| Maximum RMS voltage | V RMS | 14 | 21 | 28 | 35 | 42 | V |
| Maximum DC blocking voltage | V DC | 20 | 30 | 40 | 50 | 60 | V |
| Maximum average forward rectified current at T L (fig. 1) | I F(AV) | 3.0 | A | ||||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load | I FSM | 100 | A | ||||
| Non-repetitive avalanche energy at T A = 25 °C, I AS = 2.0 A, L = 10 mH | E AS | 20 | mJ | ||||
| Voltage rate of change (rated V R ) | dV/dt | 10 000 | V/μs | ||||
| Operating junction temperature range | T J | -55 to | +125 | -55 to | +150 | °C | |
| Storage temperature range | T STG | -55 to +150 | °C |
DO-214AB (SMC)
DO-214AB (SMC)
| PRIMARY CHARACTERISTICS | PRIMARY CHARACTERISTICS |
|---|---|
| I F(AV) | 3.0 A |
| V RRM | 20 V, 30 V, 40 V, 50 V, 60 V |
| I FSM | 100 A |
| EAS | 20 mJ |
| V F | 0.5 V, 0.75 V |
| T J max. | 125 °C, 150 °C |
| Package | DO-214AB |
| Diode variations | Single |
DO-214AB (SMC)
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All Diodes datasheetsAll Vishay Intertechnology datasheets (32)
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