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SS34HE

Schottky Barrier Rectifier

The SS34HE is a schottky barrier rectifier from Vishay General Semiconductor. View the full SS34HE datasheet below including specifications and datasheet sections.

Manufacturer

Vishay General Semiconductor

Category

Schottky Barrier Rectifier

Package

SOD-123HE

Overview

Part: SS3x Series — Vishay General Semiconductor

Type: Surface Mount Schottky Barrier Rectifier

Description: 3.0 A, 20-60 V surface mount Schottky barrier rectifier with low forward voltage drop, high surge capability, and low power losses.

Operating Conditions:

  • DC blocking voltage: 20–60 V
  • Operating junction temperature: -55 to +150 °C
  • Average forward rectified current: 3.0 A

Absolute Maximum Ratings:

  • Max repetitive peak reverse voltage: 60 V
  • Max average forward rectified current: 3.0 A
  • Max junction temperature: +150 °C
  • Max storage temperature: -55 to +150 °C

Key Specs:

  • Maximum average forward rectified current (I_F(AV)): 3.0 A
  • Maximum repetitive peak reverse voltage (V_RRM): 20 V, 30 V, 40 V, 50 V, 60 V
  • Peak forward surge current (I_FSM): 100 A (8.3 ms single half sine-wave)
  • Maximum instantaneous forward voltage (V_F): 0.5 V (at 3.0 A for SS33), 0.75 V (at 3.0 A for SS35)
  • Maximum DC reverse current (I_R): 0.5 mA (at T_A = 25 °C), 20 mA (at T_A = 100 °C for SS33), 10 mA (at T_A = 100 °C for SS35)
  • Non-repetitive avalanche energy (E_AS): 20 mJ (at T_A = 25 °C, I_AS = 2.0 A, L = 10 mH)
  • Voltage rate of change (dV/dt): 10 000 V/μs (rated V_R)
  • Typical thermal resistance (R_θJA): 55 °C/W (PCB mounted)

Features:

  • Low profile package
  • Ideal for automated placement
  • Guardring for overvoltage protection
  • Low power losses, high efficiency
  • Low forward voltage drop
  • High surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified

Applications:

  • Low voltage high frequency inverters
  • Freewheeling
  • DC/DC converters
  • Polarity protection applications

Package:

  • DO-214AB (SMC)

Features

  • Low profile package
  • Ideal for automated placement
  • Guardring for overvoltage protection
  • Low power losses, high efficiency
  • Low forward voltage drop
  • High surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Applications

For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.

Typical Application

For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.

Package Information

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 -RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ('_X' denotes revision code e.g. A, B, .....)

Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETERSYMBOLSS32SS33SS34SS35SS36UNIT
Device marking codeS2S3S4S5S6
Maximum repetitive peak reverse voltageV RRM2030405060V
Maximum RMS voltageV RMS1421283542V
Maximum DC blocking voltageV DC2030405060V
Maximum average forward rectified current at T L (fig. 1)I F(AV)3.0A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM100A
Non-repetitive avalanche energy at T A = 25 °C, I AS = 2.0 A, L = 10 mHE AS20mJ
Voltage rate of change (rated V R )dV/dt10 000V/μs
Operating junction temperature rangeT J-55 to+125-55 to+150°C
Storage temperature rangeT STG-55 to +150°C

DO-214AB (SMC)

DO-214AB (SMC)

PRIMARY CHARACTERISTICSPRIMARY CHARACTERISTICS
I F(AV)3.0 A
V RRM20 V, 30 V, 40 V, 50 V, 60 V
I FSM100 A
EAS20 mJ
V F0.5 V, 0.75 V
T J max.125 °C, 150 °C
PackageDO-214AB
Diode variationsSingle

DO-214AB (SMC)

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