PMEG4010CE
Schottky Barrier RectifierThe PMEG4010CE is a schottky barrier rectifier from Nexperia. View the full PMEG4010CE datasheet below including key specifications.
Official PMEG4010CE datasheet (PDF) — the source this page was extracted from.
PMEG4010CE Key Specifications
| Parameter | Value |
|---|---|
| Storage Temperature | -65 °C to +150 °C |
| Forward Current (IF) | 1 A |
| Reverse Voltage (VR) | 40 V |
| Junction Temperature (Tj) | 150 °C max |
| Operating Ambient Temperature | -65 °C to +150 °C |
| Forward Voltage (VF) At IF = 1 A | 490 mV typ, 570 mV max |
| Forward Voltage (VF) At IF = 1 MA | 210 mV typ, 240 mV max |
| Reverse Current (IR) At VR = 40 V | 6 µA typ, 50 µA max |
| Repetitive Peak Forward Current (IFRM) | 7 A |
| Non-Repetitive Peak Forward Current (IFSM) | 9 A (SOD123F version), 10 A (SOD323F version) |
| Diode Capacitance (Cd) At VR = 1 V, F = 1 MHz | 69 pF typ, 77 pF max |
PMEG4010CE Overview
Part: PMEG4010CEJ — Nexperia
Type: MEGA Schottky barrier rectifier
Description: A Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with 1 A forward current, 40 V reverse voltage, and very low forward voltage, encapsulated in small and flat lead SMD plastic packages.
Operating Conditions:
- Operating temperature: -65 to +150 °C
- Forward current: up to 1 A (T_sp ≤ 55 °C)
- Reverse voltage: up to 40 V
Absolute Maximum Ratings:
- Max reverse voltage: 40 V
- Max forward current: 1 A (T_sp ≤ 55 °C)
- Max repetitive peak forward current: 7 A (t_p ≤ 1 ms; d ≤ 0.25)
- Max non-repetitive peak forward current: 10 A (square wave; t_p = 8 ms) for PMEG4010CEJ
- Max junction temperature: 150 °C
- Max storage temperature: 150 °C
Key Specs:
- Forward voltage (V_F): 490 mV (Typ) / 570 mV (Max) at I_F = 1 A (T_amb = 25 °C)
- Forward voltage (V_F): 210 mV (Typ) / 240 mV (Max) at I_F = 1 mA (T_amb = 25 °C)
- Reverse current (I_R): 6 μA (Typ) / 50 μA (Max) at V_R = 40 V (T_amb = 25 °C)
- Reverse current (I_R): 0.8 μA (Typ) at V_R = 5 V (T_amb = 25 °C)
- Diode capacitance (C_d): 69 pF (Typ) / 77 pF (Max) at V_R = 1 V, f = 1 MHz (T_amb = 25 °C)
Features:
- Forward current: I_F ≤ 1 A
- Reverse voltage: V_R ≤ 40 V
- Very low forward voltage
- Small and flat lead SMD plastic packages
Applications:
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch mode power supply
- Reverse polarity protection
- Low power consumption applications
Package:
- SOD323F (SC-90)
- SOD123F
PMEG4010CE Features
-
n Forward current: IF £ 1 A
-
n
-
Reverse voltage: VR £ 40 V
-
n Very low forward voltage
-
n Small and flat lead SMD plastic packages
PMEG4010CE Applications
- n Low voltage rectification
- n High efficiency DC-to-DC conversion
- n Switch mode power supply
- n Reverse polarity protection
- n Low power consumption applications
PMEG4010CE Thermal Information
| Table 7. | Thermal characteristics |
|---|---|
| Symbol | Parameter |
| R th(j-a) | thermal resistance from junction to ambient |
| PMEG4010CEH | |
| PMEG4010CEJ | |
| R th(j-sp) | thermal resistance from junction to solder point |
| PMEG4010CEH | |
| PMEG4010CEJ |
PMEG4010CE Package Information
Fig 5. Package outline SOD123F
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| PMEG4010CEH | Nexperia | SOD123F |
| PMEG4010CEJ | Nexperia | SOD323F |
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- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
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