CH213L
Low Dropout Ideal Diode ChipThe CH213L is a low dropout ideal diode chip from WCH. View the full CH213L datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
CH213L shares its datasheet with CH213, whose page lists every part number it covers.
Official CH213L datasheet (PDF) — the source this page was extracted from.
CH213L Key Specifications
| Parameter | Value |
|---|---|
| Package Dimensions | 2x2mm, 0.65mm pin pitch |
| On-Resistance (Ron) | 160mΩ typ at 5V, 500mA |
| Supply Voltage Range | 2.2V to 5.5V |
| Voltage Drop At 200mA | 32mV typ at 5V |
| Quiescent Current (Iq) | 3.6μA typ (10μA max) |
| Maximum Power Dissipation | 400mW |
| Operating Temperature Range | -40°C to 85°C |
| Ideal Diode On-Current Range | 0 to 900mA at 5V |
| Output Capacitive Load Range | 0.0001μF to 500μF |
| Thermal Resistance (DFN6 2x2) | 140°C/W |
| Current Limit Threshold (Imax) | 1.05A to 1.6A (1.3A typ) at 5V |
| Short-Circuit Current (Ishort) | 250mA typ at 5V |
| Over-Temperature Shutdown Threshold | 130°C rising / 100°C falling at 5V |
| Overcurrent Protection Response Time | 10μs typ (60μs max) |
CH213L Overview
Part: CH213 — wch-ic.com
Type: Low Dropout Ideal Diode
Description: Low dropout ideal diode chip with current limiting, overcurrent, short-circuit, over-temperature, and power supply polarity protection, supporting up to 1A current at 5V with a typical 160mΩ on-resistance.
Operating Conditions:
- Supply voltage: 2.2–5.5 V
- Operating temperature: -40 to 85 °C
- Max on-current: 900 mA (at 5V)
- Current limit: 1.3 A (typical at 5V)
Absolute Maximum Ratings:
- Max supply voltage: 6.5 V (VI pin to GND)
- Max junction/storage temperature: 150 °C
Key Specs:
- Power switching tube on-resistance: Typ 160 mΩ (Iout=500mA, VI/VO=5V, TA=25°C)
- Voltage drop: Typ 32 mV (Iout=200mA, VI/VO=5V, TA=25°C)
- Quiescent operating current: Typ 3.6 μA (VI/VO=5V, TA=25°C)
- Current limit threshold: Typ 1.3 A (VI/VO=5V, TA=25°C)
- Short-circuit current: Typ 250 mA (VI/VO=5V, TA=25°C)
- Over-temperature protection threshold (rising): Typ 130 °C
- Overcurrent/short circuit protection response time: Typ 10 μS (Cload=1μF)
- Reverse conduction current: Typ 0 μA, Max 3 μA (VI/VO=5V, TA=25°C)
Features:
- Built-in power switching tube, typical 160mΩ on-resistance.
- Low turn-on voltage and low dropout single conductor, typical voltage drop of 32mV at 200mA current.
- Support maximum on-current of about 1A at 5V and current limit of about 1.3A.
- Support power supply voltage 2.2V~5.5V.
- Typical 20uS fast current limit protection in case of output over-current or output short-circuit.
- Diode chip shutdown to protect the load circuit at the output in case of input power polarity error.
- Low-power consumption, typical 4μA quiescent operating current.
- No reverse conduction current in diode chip off state.
Applications:
- Low Voltage Drop Diode Unidirectional Power Supply
- Dual Power Supply Selection for High Voltage
- Anti External Power Supply Polarity Reverse Connection
Package:
- SOT23-3
- SOT23-6
- DFN6
CH213L Electrical Characteristics
| Name | Parameter Description | Parameter Description | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VI,VO | Supply voltage (take the higher voltage among VI or VO) | Supply voltage (take the higher voltage among VI or VO) | 2.2 | 5 | 5.5 | V |
| Iq | Quiet operating current at turn-on | Quiet operating current at turn-on | 3.6 | 10 | μA | |
| Isdo | Operating current at theVO side at shutdown | Operating current at theVO side at shutdown | 2.7 | 10 | μA | |
| Isdi | Operating current at the VI side at shutdown | Operating current at the VI side at shutdown | 0 | 1 | μA | |
| Ioff | Reverse conduction current fromVO to VI at shutdown | Reverse conduction current fromVO to VI at shutdown | 0 | 3 | μA | |
| Vsw | Ideal differential pressure threshold for diode opening (VI-VO) | Ideal differential pressure threshold for diode opening (VI-VO) | 14 | mV | ||
| Ron | Power switching tube on- resistance | Iout=500mA | 120 | 160 | 240 | mΩ |
| Iout | Ideal diode on-current range | Ideal diode on-current range | 0 | 500 | 900 | mA |
| Imax | Current limit threshold, overcurrent protection current threshold | Current limit threshold, overcurrent protection current threshold | 1.05 | 1.3 | 1.6 | A |
| Vshort | VO short-circuit protection voltage threshold | VO short-circuit protection voltage threshold | 0.8 | 0.95 | 1.1 | V |
| Ishort | VO short-circuit current to ground after short- circuit protection | VO short-circuit current to ground after short- circuit protection | 180 | 250 | 330 | mA |
| Vdrmin | Ideal diode conduction minimum voltage drop | Iout=0.1mA | 2 | 15 | 30 | mV |
| Vdr100 | Voltage drop when the ideal diode is on | Iout=100mA | 6 | 20 | 40 | mV |
| Vdr200 | Voltage drop when the ideal diode is on | Iout=200mA | 16 | 32 | 57 | mV |
| Vdr300 | Voltage drop when the ideal diode is on | Iout=300mA | 28 | 48 | 80 | mV |
| Vdr500 | Voltage drop when the ideal diode is on | Iout=500mA | 52 | 80 | 130 | mV |
| Vdr1k | Voltage drop when the ideal diode is on | Iout=1000mA | 120 | 160 | 240 | mV |
| Tsd | Over-temperature protection | Rising stage | 130 | °C |
4
| threshold (with hysteresis characteristics) | Falling stage | 100 | °C | |||
|---|---|---|---|---|---|---|
| Ton | Main guide opening time | Cload=1μF | 600 | 1200 | uS | |
| Tshort | Overcurrent or short circuit protection response time | Cload=1μF | 10 | 60 | uS | |
| Rload | Resistive load range at theVO output | Resistive load range at theVO output | 5 | Ω | ||
| Cload | Capacitive load range at theVO output | Capacitive load range at theVO output | 0.0001 | 0.1~10 | 500 | μF |
CH213L Absolute Maximum Ratings
| Name | Parameter Description | Min. | Max. | Unit |
|---|---|---|---|---|
| TA | Ambient temperature at work | -40 | 85 | °C |
| TS | Ambient temperature during storage | -55 | 150 | °C |
| VI | Supply voltage of VI pin to GND pin | -6.5 | 6.5 | V |
| VO | Supply voltage ofVO pin toGND pin | -0.5 | 6.5 | V |
| VDIFF | Voltage difference between VI pin andVO pin (VI-VO) | -6.5 | 6.5 | V |
| VESD | HBMmannequin ESD tolerant voltage | 2 | V | |
| PD | Maximum power consumption of the whole chip | 400 | mW | |
| θ JAS | SOT23, SOT23-6L package thermal resistance | 220 | °C/W | |
| θ JAQ | DFN6_2x2 package thermal resistance | 140 | °C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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