DF02S
Glass Passivated Bridge RectifierThe DF02S is a glass passivated bridge rectifier from onsemi. View the full DF02S datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
DF02S shares its datasheet with DF01S, whose page lists every part number it covers.
Official DF02S datasheet (PDF) — the source this page was extracted from.
DF02S Key Specifications
| Parameter | Value |
|---|---|
| Package | PDIP-4 GW (Case 709AE) |
| Storage Temperature | -55°C to +150°C |
| Forward Voltage (VF) | 1.1V max at IF = 1.5A (0.94V typ), per element |
| Reverse Current (IR) | 5.0 µA max at 25°C; 500 µA max at 125°C |
| I²T Rating For Fusing | 10 A²s (t < 8.35 ms) |
| Power Dissipation (PD) | 3.1W |
| DC Reverse Voltage (VDC) | 200V |
| Junction Capacitance (CJ) | 25 pF typ per leg (VR = 4.0V, f = 1 MHz) |
| Operating Junction Temperature | -55°C to +150°C |
| Peak Forward Surge Current (IFSM) | 50A (8.3 ms single half-sine wave) |
| Thermal Resistance Junction-To-Ambient | 62 °C/W (single die, max land pattern) |
| Maximum RMS Bridge Input Voltage (VRMS) | 140V |
| Maximum Repetitive Reverse Voltage (VRRM) | 200V |
| Average Rectified Forward Current (IF(AV)) | 1.5A at TA = 40°C |
DF02S Overview
Part: DF005S - DF10S — onsemi
Type: Bridge Rectifier
Description: 1.5 A, 50 V to 1000 V surface mount bridge rectifier featuring a 50 A peak surge rating and 1.1 V maximum forward voltage.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to +150 °C (Operating Junction Temperature)
Absolute Maximum Ratings:
- Max supply voltage: 50 V to 1000 V (Maximum Repetitive Reverse Voltage VRRM, part-dependent)
- Max continuous current: 1.5 A (Average Rectified Forward Current IF(AV) at TA = 40 °C)
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- Maximum Forward Voltage (VF, per Element): 1.1 V (IF = 1.5 A, TA = 25 °C; typ. 0.94 V)
- Reverse Current (IR, per Element): 5.0 μA max at TA = 25 °C (at rated VR)
- Reverse Current (IR, per Element): 500 μA max at TA = 125 °C (at rated VR)
- Non-Repetitive Peak Forward Surge Current (IFSM): 50 A (8.3 ms Single Half-Sine Wave)
- Rating for Fusing (I²t): 10 A²s (t < 8.35 ms)
- Typical Capacitance (CJ, per Leg): 25 pF (VR = 4.0 V, f = 1.0 MHz)
- Power Dissipation (PD): 3.1 W (TA = 25 °C)
- Thermal Resistance Junction-to-Ambient (RθJA): 50 to 105 °C/W (Multi-Die Measurement, land-pattern dependent)
Features:
- Optimized VF: Typical 0.94 V at 1.5 A, 25 °C
- Maximum Surge Rating: IFSM = 50 A, I²t = 10 A²s
- Glass Passivated Junctions
- Green Molding Compound: IEC61249
- Lead Free Compliant to EU RoHS 2002/95/EU Directives
- Qualified with IR Reflow and Wave Soldering
- UL Certified, UL #E258596
Applications:
- Power supply rectification
Package:
- PDIP-4 GW (CASE 709AE)
DF02S Features
- Optimized VF: Typical 0.94 V at 1.5 A, 25 ° C
- Maximum Surge Rating: IFSM = 50 A, I 2 t = 10 A 2 Sec
- Glass Passivated Junctions
- Green Molding Compound: IEC61249
- Lead Free Compliant to EU RoHS 2002/95/EU Directives
- Qualified with IR Reflow and Wave Soldering
- UL Certified, UL #E258596
PDIP - 4 GW CASE 709AE
PDIP - 4 GW CASE 709AE
DF02S Electrical Characteristics
Values are at T A = 25 ° C unless otherwise noted.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V F | Forward Voltage, per Element | I F = 1.5 A | - | - | 1.1 | V |
| I R | Reverse Current, per Element at Rated V R | T A = 25 ° C | - | - | 5.0 | m A |
| T A = 125 _ C | - | - | 500 | |||
| I 2 t | Rating for Fusing (t < 8.35 ms) | - | - | - | 10 | A 2 s |
| C J | Typical Capacitance, per Leg | V R = 4.0 V, f = 1.0 MHz | - | 25 | - | pF |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 2. Minimun pads of 2 oz copper
DF02S Absolute Maximum Ratings
| Value | Value | Value | Value | Value | Value | Value | ||
|---|---|---|---|---|---|---|---|---|
| Symbol | Parameter | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S |
| V RRM | Maximum Repetitive Reverse Voltage | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| V RMS | Maximum RMS Bridge Input Voltage | 35 | 70 | 140 | 280 | 420 | 560 | 700 |
| V DC | DC Reverse Voltage at Rated I R | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| I F(AV) | Average Rectified Forward Current at T A = 40 ° C | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 |
| I FSM | Non - Repetitive Peak Forward Surge Current 8.3 ms Single Half - Sine Wave | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| T STG | Storage Temperature Range | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 |
| T J | Operating Junction Temperature | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 | - 55 to +150 |
DF02S Thermal Information
| Symbol | Parameter | Value | Unit | |
|---|---|---|---|---|
| P D | Power Dissipation | Power Dissipation | 3.1 | W |
| R θ JA | Thermal Resistance, Junction - to - Ambient | Single - Die Measurement (Note 1) (Maximum Land Pattern: 13 x 13 mm) | 62 | ° C/W |
| R θ JA | Thermal Resistance, Junction - to - Ambient | Multi - Die Measurement (Note 2) (Maximum Land Pattern: 13 x 13 mm) | 50 | |
| R θ JA | Thermal Resistance, Junction - to - Ambient | Multi - Die Measurement (Note 2) (Minimum Land Pattern: 1.3 x 1.5 mm) | 105 | |
| ψ JL | Thermal Characterization Parameter, Junction to Lead | Single - Die Measurement (Note 2) (Maximum and Minimum Land Pattern) | 27 | ° C/W |
Figure 1. Maximum pads of 2 oz copper
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These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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