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DF06S

Glass Passivated Bridge Rectifier

The DF06S is a glass passivated bridge rectifier from onsemi. View the full DF06S datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

DF06S shares its datasheet with DF01S, whose page lists every part number it covers.

Official DF06S datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

Diodes

Package

PDIP-4

DF06S Key Specifications

ParameterValue
I2t Rating10 A2s
Storage Temperature-55°C to +150°C
Forward Voltage (VF)1.1 V max at IF = 1.5 A (0.94 V typ), per element
Reverse Current (IR)5.0 µA max at 25°C; 500 µA max at 125°C
Power Dissipation (PD)3.1 W
DC Reverse Voltage (VDC)600 V
Junction Capacitance (CJ)25 pF typ at VR = 4 V, f = 1 MHz
Operating Junction Temperature-55°C to +150°C
Thermal Resistance Junction-To-Ambient50 to 105 °C/W
Maximum RMS Bridge Input Voltage (VRMS)420 V
Maximum Repetitive Reverse Voltage (VRRM)600 V
Average Rectified Forward Current (IF(AV))1.5 A at TA = 40°C
Non-Repetitive Peak Forward Surge Current (IFSM)50 A (8.3 ms half-sine)

DF06S Overview

Part: DF005S - DF10S — onsemi

Type: Bridge Rectifier

Description: 1.5 A, 50 V to 1000 V surface mount bridge rectifier featuring a 50 A peak surge rating and 1.1 V maximum forward voltage.

Operating Conditions:

  • Supply voltage: not applicable
  • Operating temperature: -55 to +150 °C (Operating Junction Temperature)

Absolute Maximum Ratings:

  • Max supply voltage: 50 V to 1000 V (Maximum Repetitive Reverse Voltage VRRM, part-dependent)
  • Max continuous current: 1.5 A (Average Rectified Forward Current IF(AV) at TA = 40 °C)
  • Max junction/storage temperature: -55 to +150 °C

Key Specs:

  • Maximum Forward Voltage (VF, per Element): 1.1 V (IF = 1.5 A, TA = 25 °C; typ. 0.94 V)
  • Reverse Current (IR, per Element): 5.0 μA max at TA = 25 °C (at rated VR)
  • Reverse Current (IR, per Element): 500 μA max at TA = 125 °C (at rated VR)
  • Non-Repetitive Peak Forward Surge Current (IFSM): 50 A (8.3 ms Single Half-Sine Wave)
  • Rating for Fusing (I²t): 10 A²s (t < 8.35 ms)
  • Typical Capacitance (CJ, per Leg): 25 pF (VR = 4.0 V, f = 1.0 MHz)
  • Power Dissipation (PD): 3.1 W (TA = 25 °C)
  • Thermal Resistance Junction-to-Ambient (RθJA): 50 to 105 °C/W (Multi-Die Measurement, land-pattern dependent)

Features:

  • Optimized VF: Typical 0.94 V at 1.5 A, 25 °C
  • Maximum Surge Rating: IFSM = 50 A, I²t = 10 A²s
  • Glass Passivated Junctions
  • Green Molding Compound: IEC61249
  • Lead Free Compliant to EU RoHS 2002/95/EU Directives
  • Qualified with IR Reflow and Wave Soldering
  • UL Certified, UL #E258596

Applications:

  • Power supply rectification

Package:

  • PDIP-4 GW (CASE 709AE)

DF06S Features

  • Optimized VF: Typical 0.94 V at 1.5 A, 25 ° C
  • Maximum Surge Rating: IFSM = 50 A, I 2 t = 10 A 2 Sec
  • Glass Passivated Junctions
  • Green Molding Compound: IEC61249
  • Lead Free Compliant to EU RoHS 2002/95/EU Directives
  • Qualified with IR Reflow and Wave Soldering
  • UL Certified, UL #E258596

PDIP - 4 GW CASE 709AE

PDIP - 4 GW CASE 709AE

DF06S Electrical Characteristics

Values are at T A = 25 ° C unless otherwise noted.

SymbolParameterConditionsMin.Typ.Max.Unit
V FForward Voltage, per ElementI F = 1.5 A--1.1V
I RReverse Current, per Element at Rated V RT A = 25 ° C--5.0m A
T A = 125 _ C--500
I 2 tRating for Fusing (t < 8.35 ms)---10A 2 s
C JTypical Capacitance, per LegV R = 4.0 V, f = 1.0 MHz-25-pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 2. Minimun pads of 2 oz copper

DF06S Absolute Maximum Ratings

ValueValueValueValueValueValueValue
SymbolParameterDF005SDF01SDF02SDF04SDF06SDF08SDF10S
V RRMMaximum Repetitive Reverse Voltage501002004006008001000
V RMSMaximum RMS Bridge Input Voltage3570140280420560700
V DCDC Reverse Voltage at Rated I R501002004006008001000
I F(AV)Average Rectified Forward Current at T A = 40 ° C1.51.51.51.51.51.51.5
I FSMNon - Repetitive Peak Forward Surge Current 8.3 ms Single Half - Sine Wave50505050505050
T STGStorage Temperature Range- 55 to +150- 55 to +150- 55 to +150- 55 to +150- 55 to +150- 55 to +150- 55 to +150
T JOperating Junction Temperature- 55 to +150- 55 to +150- 55 to +150- 55 to +150- 55 to +150- 55 to +150- 55 to +150

DF06S Thermal Information

SymbolParameterValueUnit
P DPower DissipationPower Dissipation3.1W
R θ JAThermal Resistance, Junction - to - AmbientSingle - Die Measurement (Note 1) (Maximum Land Pattern: 13 x 13 mm)62° C/W
R θ JAThermal Resistance, Junction - to - AmbientMulti - Die Measurement (Note 2) (Maximum Land Pattern: 13 x 13 mm)50
R θ JAThermal Resistance, Junction - to - AmbientMulti - Die Measurement (Note 2) (Minimum Land Pattern: 1.3 x 1.5 mm)105
ψ JLThermal Characterization Parameter, Junction to LeadSingle - Die Measurement (Note 2) (Maximum and Minimum Land Pattern)27° C/W

Figure 1. Maximum pads of 2 oz copper

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
DF005Sonsemi—
DF01SonsemiPDIP-4
DF02SonsemiPDIP-4
DF04SonsemiPDIP-4

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  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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