CSD18540
N-Channel NexFET Power MOSFETThe CSD18540 is a n-channel nexfet power mosfet from Texas Instruments. View the full CSD18540 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
N-Channel NexFET Power MOSFET
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 100A (Ta) |
| Drain-Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 53 nC @ 10 V |
| Input Capacitance (Ciss) | 4230 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | MouseReel |
| Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) |
| Rds(on) | 2.2mOhm @ 28A, 10V Ω |
| Standard Pack Qty | 2500 |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 2.3V @ 250µA |
Overview
Part: CSD18540Q5B — Texas Instruments
Type: N-Channel NexFET™ Power MOSFET
Description: This 1.8 mΩ, 60 V, SON5x6 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Operating Conditions:
- Supply voltage: 60 V (Drain-to-Source)
- Operating temperature: -55 to 150 °C
Absolute Maximum Ratings:
- Max supply voltage: 60 V (Drain-to-Source)
- Max continuous current: 100 A (Package limited)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-to-Source On Resistance (RDS(on)): 1.8 mΩ (VGS = 10 V, ID = 28 A)
- Drain-to-Source On Resistance (RDS(on)): 2.6 mΩ (VGS = 4.5 V, ID = 28 A)
- Gate-to-Source Threshold Voltage (VGS(th)): 1.9 V (typ), 2.3 V (max) (VDS = VGS, ID = 250 μA)
- Gate Charge Total (Qg): 41 nC (VDS = 30 V, ID = 28 A, VGS = 10 V)
- Input Capacitance (Ciss): 3250 pF (typ), 4230 pF (max) (VGS = 0 V, VDS = 30 V, ƒ = 1 MHz)
- Drain-to-Source Leakage Current (IDSS): 1 μA (max) (VGS = 0 V, VDS = 48 V)
- Diode Forward Voltage (VSD): 0.8 V (typ), 1 V (max) (ISD = 28 A, VGS = 0 V)
Features:
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
Applications:
- DC-DC Conversion
- Secondary Side Synchronous Rectifier
- Isolated Converter Primary Side Switch
- Motor Control
Package:
- SON 5 × 6 mm Plastic Package (8 pins)
- VSON-CLIP (8 pins)
Features
- 1 · Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
Applications
- DC-DC Conversion
- Secondary Side Synchronous Rectifier
- Isolated Converter Primary Side Switch
- Motor Control
Electrical Characteristics
(TA = 25°C unless otherwise stated)
| PARAMETER | PARAMETER | TEST CONDITIONS | TYP | MAX | UNIT |
|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS |
| BV DSS | Drain-to-Source Voltage | V GS = 0 V, I D = 250 μ A | V | ||
| I DSS | Drain-to-Source Leakage Current | V GS = 0 V, V DS = 48 V | 1 | μ A | |
| I GSS | Gate-to-Source Leakage Current | V DS = 0 V, V GS = 20 V | 100 | nA | |
| V GS(th) | Gate-to-Source Threshold Voltage | V DS = V GS , I D = 250 μ A | 1.9 | 2.3 | V |
| R | Drain-to-Source On Resistance | V GS = 4.5 V, I D = 28 A | 2.6 | 3.3 | m Ω |
| DS(on) | V GS = 10 V, I D = 28 A | 1.8 | 2.2 | m Ω | |
| g fs | Transconductance | V DS = 6 V, I D = 28 A | 116 | S | |
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V GS = 0 V, V DS = 30 V, ƒ = 1 MHz | 3250 | 4230 | pF |
| C oss | Output Capacitance | 622 | 808 | pF | |
| C rss | Reverse Transfer Capacitance | 15 | 20 | pF | |
| R G | Series Gate Resistance | 0.8 | 1.6 | Ω | |
| Q g | Gate Charge Total (4.5 V) | V DS = 30 V, I D = 28 A | 20 | 26 | nC |
| Q g | Gate Charge Total (10 V) | 41 | 53 | nC | |
| Q gd | Gate Charge Gate-to-Drain | 6.7 | nC | ||
| Q gs | Gate Charge Gate-to-Source | 8.8 | nC | ||
| Q g(th) | Gate Charge at V th | 6.3 | nC | ||
| Q oss | Output Charge | V DS = 30 V, V GS = 0 V | 83 | nC | |
| t d(on) | Turn On Delay Time | V DS = 30 V, V GS = 10 V, I DS = 28 A, R G = 0 Ω | 6 | ns | |
| t r | Rise Time | 9 | ns | ||
| t d(off) | Turn Off Delay Time | 20 | ns | ||
| t f | Fall Time | 3 | ns | ||
| DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS |
| V SD | Diode Forward Voltage | I SD = 28 A, V GS = 0 V | 0.8 | 1 | V |
| Q rr | Reverse Recovery Charge | V DS = 30 V, I F = 28 A, | 145 | nC | |
| t rr | Reverse Recovery Time | di/dt = 300 A/ μ s | 82 | ns |
Absolute Maximum Ratings
| T A = 25°C | T A = 25°C | VALUE | UNIT |
|---|---|---|---|
| V DS | Drain-to-Source Voltage | 60 | V |
| V GS | Gate-to-Source Voltage | ±20 | V |
| I D | Continuous Drain Current (Package limited) | 100 | A |
| I D | Continuous Drain Current (Silicon limited), T C = 25°C | 221 | A |
| I D | Continuous Drain Current (1) | 28 | A |
| I DM | Pulsed Drain Current, T A = 25°C (2) | 400 | A |
| P D | Power Dissipation (1) | 3.1 | W |
| P D | Power Dissipation, T C = 25°C | 195 | W |
| T J , T stg | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
| E AS | Avalanche Energy, single pulse I D = 80 A, L = 0.1 mH, R G = 25 Ω | 320 | mJ |
- (1) Typical R θ JA = 40°C/W on a 1-inch 2 , 2-oz. Cu pad on a 0.06inch thick FR4 PCB.
- (2) Max R θ JC = 0.8°C/W, Pulse duration ≤ 100 μ s, duty cycle ≤ 1%
CSD18540Q5B
SLPS488 -JUNE 2014
Thermal Information
(TA = 25°C unless otherwise stated)
| THERMAL METRIC | THERMAL METRIC | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|
| R θ JC | Junction-to-Case Thermal Resistance (1) | 0.8 | °C/W | ||
| R θ JA | Junction-to-Ambient Thermal Resistance (1)(2) | 50 | 0.8 | °C/W |
Max R θ JA = 50°C/W when mounted on 1 inch 2 (6.45 cm 2 ) of 2-oz. (0.071-mm thick) Cu.
Package Information
| DIM | MILLIMETERS | MILLIMETERS | MILLIMETERS |
|---|---|---|---|
| DIM | MIN | NOM | MAX |
| A | 0.80 | 1.00 | 1.05 |
| b | 0.36 | 0.41 | 0.46 |
| c | 0.15 | 0.20 | 0.25 |
| c1 | 0.15 | 0.20 | 0.25 |
| c2 | 0.20 | 0.25 | 0.30 |
| D1 | 4.90 | 5.00 | 5.10 |
| D2 | 4.12 | 4.22 | 4.32 |
| D3 | 3.90 | 4.00 | 4.10 |
| d | 0.20 | 0.25 | 0.30 |
| d1 | 0.085 TYP | 0.085 TYP | 0.085 TYP |
| d2 | 0.319 | 0.369 | 0.419 |
| E | 4.90 | 5.00 | 5.10 |
| E1 | 5.90 | 6.00 | 6.10 |
| E2 | 3.48 | 3.58 | 3.68 |
| e | 1.27 TYP | 1.27 TYP | 1.27 TYP |
| H | 0.36 | 0.46 | 0.56 |
| L | 0.46 | 0.56 | 0.66 |
| L1 | 0.57 | 0.67 | 0.77 |
| θ | 0° | - | - |
| K | 1.40 TYP | 1.40 TYP | 1.40 TYP |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| CSD18540Q5B | Texas Instruments | 8-PowerTDFN |
| CSD18540Q5BT | Texas Instruments | 8-PowerTDFN |
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