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CSD18540Q5BT

N-Channel NexFET Power MOSFET

The CSD18540Q5BT is a n-channel nexfet power mosfet from Texas Instruments. View the full CSD18540Q5BT datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

CSD18540Q5BT shares its datasheet with CSD18540Q5B, whose page lists every part number it covers.

Official CSD18540Q5BT datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

MOSFETs

Package

8-PowerTDFN

CSD18540Q5BT Key Specifications

ParameterValue
Continuous Drain Current100A (Ta)
Drain-Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET TypeN-Channel
Gate Charge (Qg)53 nC @ 10 V
Input Capacitance (Ciss)4230 pF @ 30 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-PowerTDFN
PackagingMouseReel
Power Dissipation (Max)3.1W (Ta), 195W (Tc)
Rds(on)2.2mOhm @ 28A, 10V Ω
Standard Pack Qty250
Supplier Device Package8-VSON-CLIP (5x6)
Diode TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Gate Threshold Voltage2.3V @ 250µA

CSD18540Q5BT Overview

Part: CSD18540Q5B — Texas Instruments

Type: N-Channel NexFET™ Power MOSFET

Description: 60 V, 1.8 mΩ (typ, VGS = 10 V) N-channel NexFET power MOSFET with 41 nC typical total gate charge, in a 5 mm × 6 mm SON package.

Operating Conditions:

  • Supply voltage: not applicable (VDS rated 60 V)
  • Operating temperature: -55 to 175 °C (junction)
  • Gate drive: 4.5 V to 10 V specified for RDS(on)

Absolute Maximum Ratings:

  • Drain-to-source voltage: 60 V
  • Gate-to-source voltage: ±20 V
  • Max continuous current: 100 A (package limited); 205 A (silicon limited, TC = 25 °C)
  • Pulsed drain current: 400 A (TA = 25 °C, ≤100 μs, duty cycle ≤1%)
  • Max junction/storage temperature: -55 to 175 °C
  • Avalanche energy (single pulse, ID = 80 A, L = 0.1 mH, RG = 25 Ω): 320 mJ

Key Specs:

  • RDS(on): 1.8 mΩ typ / 2.2 mΩ max (VGS = 10 V, ID = 28 A); 2.6 mΩ typ / 3.3 mΩ max (VGS = 4.5 V, ID = 28 A)
  • VGS(th): 1.9 V typ, 2.3 V max (VDS = VGS, ID = 250 μA)
  • Qg total (10 V): 41 nC typ, 53 nC max; Qgd: 6.7 nC typ (VDS = 30 V, ID = 28 A)
  • Ciss / Coss / Crss: 3250 / 622 / 15 pF typ (VGS = 0 V, VDS = 30 V, 1 MHz)
  • IDSS: 1 μA max (VGS = 0 V, VDS = 48 V); IGSS: 100 nA max (VGS = 20 V)
  • Transconductance gfs: 116 S typ (VDS = 6 V, ID = 28 A)
  • Switching (VDS = 30 V, VGS = 10 V, RG = 0 Ω): td(on) 6 ns, tr 9 ns, td(off) 20 ns, tf 3 ns
  • Thermal: RθJC max 0.8 °C/W; RθJA max 50 °C/W (1 in² Cu), 125 °C/W (minimum pad)

Features:

  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen free

Applications:

  • DC-DC conversion
  • Secondary side synchronous rectifier
  • Isolated converter primary side switch
  • Motor control

Package:

  • SON 5 mm × 6 mm plastic package (VSON-CLIP, 8 pins), 2500 units on 13-inch reel (CSD18540Q5B)
  • CSD18540Q5BT: 250 units on 7-inch reel

CSD18540Q5BT Features

  • 1 · Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

CSD18540Q5BT Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Isolated Converter Primary Side Switch
  • Motor Control

CSD18540Q5BT Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETERPARAMETERTEST CONDITIONSTYPMAXUNIT
STATIC CHARACTERISTICSSTATIC CHARACTERISTICSSTATIC CHARACTERISTICSSTATIC CHARACTERISTICSSTATIC CHARACTERISTICSSTATIC CHARACTERISTICSSTATIC CHARACTERISTICS
BV DSSDrain-to-source voltageV GS = 0 V, I D = 250 μ AV
I DSSDrain-to-source leakage currentV GS = 0 V, V DS = 48 V1μ A
I GSSGate-to-source leakage currentV DS = 0 V, V GS = 20 V100nA
V GS(th)Gate-to-source threshold voltageV DS = V GS , I = 250 μ A1.92.3V
RDrain-to-source on resistanceV GS = 4.5 V, I D = 28 A2.63.3m Ω
DS(on)V GS = 10 V, I D = 28 A1.82.2
g fsTransconductanceV DS = 6 V, I D = 28 A116S
DYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICS
C issInput capacitanceV GS = 0 V, V DS = 30 V, ƒ = 1 MHz32504230pF
C ossOutput capacitance622808pF
C rssReverse transfer capacitance1520pF
R GSeries gate resistance0.81.6Ω
Q gGate charge total (4.5 V)2026nC
Q gGate charge total (10 V)4153nC
Q gdGate charge gate-to-drainV DS = 30 V, I DD = 28 A6.7nC
Q gsGate charge gate-to-source8.8nC
Q g(th)Gate charge at V th6.3nC
Q ossOutput chargeV DS = 30 V, V GS = 0 V83nC
t d(on)Turnon delay timeV DS = 30 V, V GS = 10 V, I DS = 28 A, R G = 0 Ω6ns
t rRise time9ns
t d(off)Turnoff delay time20ns
t fFall time3ns
DIODE CHARACTERISTICSDIODE CHARACTERISTICSDIODE CHARACTERISTICSDIODE CHARACTERISTICSDIODE CHARACTERISTICSDIODE CHARACTERISTICSDIODE CHARACTERISTICS
V SDDiode forward voltageI SD = 28 A, V GS = 0 V0.81V
Q rrReverse recovery chargeV DS = 30 V, I F = 28 A,145nC
t rrReverse recovery timedi/dt = 300 A/ μ s82ns

CSD18540Q5BT Absolute Maximum Ratings

T A = 25°CT A = 25°CVALUEUNIT
V DSDrain-to-Source Voltage60V
V GSGate-to-Source Voltage±20V
I DContinuous Drain Current (Package Limited)100A
I DContinuous Drain Current (Silicon Limited), T C = 25°C205A
I DContinuous Drain Current (1)29A
I DMPulsed Drain Current, T A = 25°C (2)400A
P DPower Dissipation (1)3.8W
P DPower Dissipation, T C = 25°C188W
T J , T stgOperating Junction, Storage Temperature-55 to 175°C
E ASAvalanche Energy, Single Pulse I D = 80 A, L = 0.1 mH, R G = 25 Ω320mJ
  • (1) Typical R θ JA = 40°C/W on a 1-in 2 , 2-oz Cu pad on a 0.06-in thick FR4 PCB.
  • (2) Max R θ JC = 0.8°C/W, pulse duration ≤ 100 μ s, duty cycle ≤ 1%.

CSD18540Q5BT Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRICTHERMAL METRICMINMAXUNIT
R θ JCJunction-to-case thermal resistance (1)0.8°C/W
R θ JAJunction-to-ambient thermal resistance (1)(2)50°C/W

Max R θ JA = 50°C/W when mounted on 1 in 2 (6.45 cm 2 ) of 2-oz (0.071-mm) thick Cu.

Max R θ JA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu.

CSD18540Q5BT Package Information

DIMMILLIMETERS - MINMILLIMETERS - NOMMILLIMETERS - MAX
A0.801.001.05
b0.360.410.46
c0.150.200.25
c10.150.200.25
c20.200.250.30
D14.905.005.10
D24.124.224.32
D33.904.004.10
d0.200.250.30
d10.085 TYP0.085 TYP0.085 TYP
d20.3190.3690.419
E4.905.005.10
E15.906.006.10
E23.483.583.68
e1.27 TYP1.27 TYP1.27 TYP
H0.360.460.56
L0.460.560.66
L10.570.670.77
θ0°--
K1.40 TYP1.40 TYP1.40 TYP

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
CSD18540Texas InstrumentsVSON-CLIP-8 5x6mm
CSD18540Q5BTexas Instruments8-PowerTDFN

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  • SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET

All MOSFETs datasheetsAll Texas Instruments datasheets (2,442)

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