Discrete Semiconductors Datasheets
588 Discrete Semiconductors datasheets read into specs, pinouts and ratings. Parts from onsemi, Diodes and Infineon Technologies.
Discrete Semiconductors datasheets, page 5
588 parts · page 5 of 20. Most used first, then by part number.
BC32740BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338.
BC327BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338
BC546
onsemi
General-purpose NPN silicon small-signal amplifier transistor in TO-92 package, 65V VCEO with DC current gain up to 800
BC546B
onsemi
General-purpose NPN silicon small-signal amplifier transistor with 65 V collector-emitter breakdown voltage (BC546), hFE of 200-450 in B grade, and 300 MHz typical transition frequency
BC546BG
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546B, Pb-Free) in a TO-92 package, 65V VCEO with hFE 200-450
BC547
onsemi
General-purpose NPN silicon BJT amplifier transistor in TO-92 package, 45 V VCEO, for small-signal amplification
BC547A
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546/547/548 family) in TO-92, 45 V VCEO for BC547, with DC gain groups A/B/C
BC547B
onsemi
General-purpose NPN silicon BJT amplifier transistor in TO-92 package, part of BC546/547/548 family with 45V VCEO and hFE 200-450 for the B gain grade
BC547C
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC547 series) with 45V VCEO, high-gain C grade (hFE 420-800 at 2 mA)
BC548
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546/547/548 family) with 30V VCEO for BC548 and up to 800 hFE.
BC548B
onsemi
General-purpose NPN silicon small-signal amplifier transistor with 30V collector-emitter breakdown (BC548 variant) in a TO-92 package
BC68-25PAS
Nexperia
20 V, 2 A NPN medium power transistor in an ultra thin leadless DFN2020D-3 package with exposed heat sink, h_FE selection -25, AEC-Q101 qualified
BC68PAS
Nexperia
20 V, 2 A NPN medium power transistor in an ultra thin leadless DFN2020D-3 (SOT1061D) package with side pads, AEC-Q101 qualified
BC846-BC848
onsemi
SOT-23 plastic-encapsulate NPN small-signal transistors (BC846/BC847/BC848 series) with 100mA collector current and 200mW dissipation, complementary to BC856-BC858
BC846A
onsemi
NPN silicon plastic-encapsulate transistor in SOT-23, 80V collector-base, 100mA collector current, 200mW dissipation, hFE group A (110-220)
BC846B
onsemi
SOT-23 plastic-encapsulate NPN bipolar transistor, 65V VCEO, 100mA collector current, 200mW dissipation, hFE group B (200-450)
BC847A
onsemi
BC847AM
onsemi
BC847AT
onsemi
BC847AW
onsemi
BC847B
onsemi
BC847BM
onsemi
BC847BT
onsemi
BC847BW
onsemi
BC847C
onsemi
BC847CM
onsemi
BC847CT
onsemi
BC847CW
onsemi
BC847T
onsemi
BC847W
onsemi