Skip to main content

We use cookies to understand how you use our site and improve your experience. See our Privacy Policy.

BC68PAS

NPN Medium Power Transistor

The BC68PAS is a npn medium power transistor from Nexperia. View the full BC68PAS datasheet below including key specifications, absolute maximum ratings.

Official BC68PAS datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

BJTs

Package

DFN2020D-3

BC68PAS Key Specifications

ParameterValue
QualificationAEC-Q101
Base Current (IB)0.4 A max
Package Dimensions2 x 2 x 0.65 mm
Storage Temperature-65 °C to 150 °C
DC Current Gain (HFE)85 to 375 at VCE = 1 V, IC = 500 mA
Collector Current (IC)2 A max
Junction Temperature (Tj)150 °C max
Transition Frequency (FT)170 MHz typ (40 MHz min)
Collector Capacitance (Cc)22 pF typ
Emitter-Base Voltage (VEBO)5 V max
Peak Collector Current (ICM)3 A max (single pulse, tp ≤ 1 ms)
Collector-Base Voltage (VCBO)32 V max
Operating Ambient Temperature-55 °C to 150 °C
Total Power Dissipation (Ptot)420 mW to 1.65 W depending on PCB mounting
Collector-Emitter Voltage (VCEO)20 V max
Collector-Emitter Saturation Voltage (VCEsat)0.5 V max at IC = 1 A, IB = 100 mA; 0.6 V max at IC = 2 A, IB = 200 mA
Thermal Resistance Junction-Ambient (Rth(J-A))76 to 298 K/W depending on PCB mounting

BC68PAS Overview

Part: BC68PAS series — Nexperia

Type: NPN medium power transistor

Description: 20 V, 2 A NPN medium power transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

Operating Conditions:

  • Operating temperature: -55 to 150 °C
  • Collector current: Up to 2 A

Absolute Maximum Ratings:

  • Max collector-base voltage: 32 V
  • Max continuous collector current: 2 A
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Collector-emitter voltage (V CEO): 20 V (open base)
  • DC current gain (h FE): 85 to 375 (V CE = 1 V; I C = 500 mA)
  • Collector-emitter saturation voltage (V CEsat): Max 0.5 V (I C = 1 A; I B = 100 mA)
  • Base-emitter voltage (V BE): Max 0.7 V (I C = 5 mA; V CE = 10 V)
  • Transition frequency (f T): Min 40 MHz (V CE = 5 V; I C = 50 mA; f = 100 MHz)
  • Collector capacitance (C c): Typ 22 pF (V CB = 10 V; I E = i e = 0 A; f = 1 MHz)
  • Total power dissipation (P tot): Max 1.65 W (Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm²)

Features:

  • High collector current capability IC and ICM
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • AEC-Q101 qualified
  • Two current gain selections
  • Leadless very small SMD plastic package with medium power capability
  • Suitable for Automatic Optical Inspection (AOI) of solder joint

Applications:

  • Linear voltage regulators
  • Battery driven devices
  • MOSFET drivers
  • Low-side switches
  • Power management
  • Amplifiers

Package:

  • DFN2020D-3 (SOT1061D) - 3 terminals, body 2 x 2 x 0.65 mm

BC68PAS Features

  • High collector current capability IC and ICM
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • AEC-Q101 qualified

BC68PAS Applications

  • Linear voltage regulators
  • Battery driven devices
  • MOSFET drivers

BC68PAS Absolute Maximum Ratings

SymbolParameterConditionsMinMaxUnit
P tottotal power dissipationT amb 25 C-420mW
-830mW
-1.1W
-810mW
-1.65W
T jjunction temperature-150C
T ambambient temperature55150C
T stgstorage temperature65150C
  • [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
  • [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm 2 .
  • [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 .
  • [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
  • [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm 2 .

BC68PAS Thermal Information

SymbolParameterConditionsMaxUnit
R th(j-a)thermal resistance from junction to ambientin free air[1]298K/W
[2]151K/W
[3]114K/W
[4]154K/W
[5]76K/W
R th(j-sp)thermal resistance from junction to solder pointin free air20K/W
  • [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
  • [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm 2 .
  • [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 .
  • [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
  • [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm 2

FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm 2

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

FR4 PCB, 4-layer copper, tin-plated and standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

BC68PAS Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BC68-25PASNexperiaDFN2020D-3

Other BJTs

  • DTC114ECA – GOODWORK, NPN Digital Transistor with Bias Resistors
  • BC847 – onsemi, NPN General-Purpose Transistor
  • 2N2219A – onsemi, NPN High Speed Switching Transistor
  • 2N2222 – onsemi, NPN Silicon Amplifier Transistor
  • 2N2222A – onsemi, NPN High Speed Switching Transistor
  • 2N3906 – onsemi, PNP Silicon General Purpose Transistor
  • 2N4921G – onsemi, NPN Medium-Power Silicon Transistor
  • 2N4922G – onsemi, Medium-Power NPN Silicon Transistor

All BJTs datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Ask your AI agent about the BC68PAS

Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.

claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp

Then ask: "Can the BC68PAS run from my 12 V rail? Check it against the datasheet limits."

Create a free account $2 of usage every month, no card needed.