BC68-25PAS

Part: BC68PAS series — Nexperia

Type: NPN medium power transistor

Description: 20 V, 2 A NPN medium power transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

Operating Conditions:

• Operating temperature: -55 to 150 °C
• Collector current: Up to 2 A

Absolute Maximum Ratings:

• Max collector-base voltage: 32 V
• Max continuous collector current: 2 A
• Max junction temperature: 150 °C
• Max storage temperature: 150 °C

Key Specs:

• Collector-emitter voltage (V CEO): 20 V (open base)
• DC current gain (h FE): 85 to 375 (V CE = 1 V; I C = 500 mA)
• Collector-emitter saturation voltage (V CEsat): Max 0.5 V (I C = 1 A; I B = 100 mA)
• Base-emitter voltage (V BE): Max 0.7 V (I C = 5 mA; V CE = 10 V)
• Transition frequency (f T): Min 40 MHz (V CE = 5 V; I C = 50 mA; f = 100 MHz)
• Collector capacitance (C c): Typ 22 pF (V CB = 10 V; I E = i e = 0 A; f = 1 MHz)
• Total power dissipation (P tot): Max 1.65 W (Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm²)

Features:

• High collector current capability IC and ICM
• Reduced Printed-Circuit Board (PCB) area requirements
• Exposed heat sink for excellent thermal and electrical conductivity
• AEC-Q101 qualified
• Two current gain selections
• Leadless very small SMD plastic package with medium power capability
• Suitable for Automatic Optical Inspection (AOI) of solder joint

Applications:

• Linear voltage regulators
• Battery driven devices
• MOSFET drivers
• Low-side switches
• Power management
• Amplifiers

Package:

• DFN2020D-3 (SOT1061D) - 3 terminals, body 2 x 2 x 0.65 mm

• High collector current capability IC and ICM
• Reduced Printed-Circuit Board (PCB) area requirements
• Exposed heat sink for excellent thermal and electrical conductivity
• AEC-Q101 qualified

• Linear voltage regulators
• Battery driven devices
• MOSFET drivers

• [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
• [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm 2 .
• [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 .
• [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
• [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm 2 .

• [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
• [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm 2 .
• [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 .
• [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
• [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm 2

FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm 2

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

FR4 PCB, 4-layer copper, tin-plated and standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values